Abstract: A non-volatile memory cell includes a first select transistor, a first floating gate transistor, a second select transistor and a second floating gate transistor. The first select transistor is connected with a source line and a first program word line. The first floating gate transistor has a first floating gate. The first floating gate transistor is connected with the first select transistor and a first program bit line. The second select transistor is connected with the source line and a first read word line. The second floating gate transistor has a second floating gate. The second floating gate transistor is connected with the second select transistor and a first read bit line. The first floating gate and the second floating gate are connected with each other.

Abstract: A non-volatile memory cell includes a first select transistor, a first floating gate transistor, a second select transistor and a second floating gate transistor. The first select transistor is connected with a source line and a first program word line. The first floating gate transistor has a first floating gate. The first floating gate transistor is connected with the first select transistor and a first program bit line. The second select transistor is connected with the source line and a first read word line. The second floating gate transistor has a second floating gate. The second floating gate transistor is connected with the second select transistor and a first read bit line. The first floating gate and the second floating gate are connected with each other.

Abstract: A one time programming non-volatile memory cell includes a first floating gate transistor with a single gate structure, an isolation transistor, and a select transistor. A first terminal of the first floating gate transistor is connected with a second control line. A floating gate of the first floating gate transistor is in a floating state. A first terminal of the isolation transistor is connected with a second terminal of the first floating gate transistor. An isolation gate of the isolation transistor is connected with an isolation line. A first terminal of the select transistor is connected with a second terminal of the isolation transistor. A second terminal of the select transistor is connected with a first control line. A select transistor of the select transistor is connected with a word line.

Abstract: A combined LED light-emitting module of marking panel has a rail-mounted rack, extended longitudinally containing a locating portion for positioning onto the marking panel, and an assembly portion. A plurality of LED light-emitting units are mounted onto the assembly portion in sequence or at interval. The LED light-emitting unit contains a support pedestal, a light-emitting faceplate, a circuit board and at least a light-emitting component on the circuit board. The light-emitting faceplate is sealed into the holding space of the support pedestal. The circuit board is mounted into the holding space and the light-emitting component is allowed to face the light-emitting faceplate. The circuit board is sealed by waterproof element. A limiter is used to limit securely the LED light-emitting units. A quick-release electrical connector, protruded from the back board of the support pedestal contains male and female conductive contacts that can be quickly removed and assembled.