Patents by Inventor Pingsheng Sun

Pingsheng Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Biased Hetch process in deposition-etch-deposition gap fill
    Patent number: 7163896
    Abstract: Biased plasma etch processes incorporating H2 etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.
    Type: Grant
    Filed: December 10, 2003
    Date of Patent: January 16, 2007
    Assignee: Novellus Systems, Inc.
    Inventors: Wenxian Zhu, Jengyi Yu, Siswanto Sutanto, Pingsheng Sun, Jeffrey Chih-Hou Lowe, Waikit Fung, Tze Wing Poon