Abstract: The first object of the invention is a method of obtaining a carbide-graphene surface composite with a controlled surface morphology, especially a SiC-graphene composite, characterized in that the SiC substrate, especially with a crystalline or polycrystalline structure, after initial preparation is successively subjected to annealing and then cooling. The second object of the invention is a carbide-graphene composite on a SiC surface, with a crystalline or polycrystalline structure, obtained by the method as defined in the first object of the invention, containing from one to four atomic layers of graphene forming a honeycomb lattice, wherein their diffraction spectrum obtained by the low energy electron diffraction method has a diffraction pattern typical of graphene on the SiC surface, characterized by the fact that it contains a surface covered with terraces or a network of pits, the difference in height of the terraces is from 0.25×10?9 m to 2.

Abstract: A method for preparation of high-quality graphene on the surface (0001) of silicon carbide by superficial graphitisation of the compound in a stream of silicon atoms from an external sublimation source is disclosed.