Patents by Inventor Piotr Glowacki

Piotr Glowacki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170296316
    Abstract: A method for the treatment of teeth which comprises enhancing transport of substances through the tooth enamel by generating a gaseous plasma in proximity to the tooth.
    Type: Application
    Filed: April 16, 2016
    Publication date: October 19, 2017
    Inventors: Piotr Glowacki, Alexander Ian McIntosh, Guy James Reynolds
  • Patent number: 9638664
    Abstract: A method of material analysis, including; placing an electrode in proximity to the material; applying a voltage signal to generate plasma, preferably Dielectric Barrier Discharge in Air, between the material and the electrode; moving the electrode relative to the surface; monitoring an electrical signal associated with the microdischarge; and detecting a change in a physical characteristic of the material through variation in the monitored signal.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: May 2, 2017
    Assignee: DBD Innovations Pty Ltd
    Inventors: Piotr Glowacki, Guy James Reynolds
  • Publication number: 20150112300
    Abstract: A method of enhanced trans-tissue delivery of therapeutic substances including; placing an electrode in proximity to human or animal tissue covered with material of sufficient concentration of such substances; applying a voltage signal to generate plasma, preferably Dielectric Barrier Discharge in Air, between the tissue and the electrode.
    Type: Application
    Filed: August 29, 2014
    Publication date: April 23, 2015
    Inventors: Piotr Glowacki, Alexander Ian McIntosh, Guy James Reynolds
  • Patent number: 8910590
    Abstract: An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: December 16, 2014
    Assignee: Gallium Enterprises Pty Ltd.
    Inventors: Conor Nicholas Martin, Guy Reynolds, Piotr Glowacki, Satyanarayan Barik, Patrick Po-Tsang Chen, Marie-Pierre Francoise Wintrebert Ep Fouquet
  • Publication number: 20130285639
    Abstract: A method of material analysis, including; placing an electrode in proximity to the material; applying a voltage signal to generate plasma, preferably Dielectric Barrier Discharge in Air, between the material and the electrode; moving the electrode relative to the surface; monitoring an electrical signal associated with the microdischarge; and detecting a change in a physical characteristic of the material through variation in the monitored signal.
    Type: Application
    Filed: March 6, 2012
    Publication date: October 31, 2013
    Applicant: DBD Innovations Pty Ltd
    Inventors: Piotr Glowacki, Guy James Reynolds
  • Publication number: 20120070963
    Abstract: An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.
    Type: Application
    Filed: February 12, 2010
    Publication date: March 22, 2012
    Applicant: Gallium Enterpriese Pty Ltd.
    Inventors: Conor Nicholas Martin, Guy Raynolds, Piotr Glowacki, Satyanarayan Barik, Patrick po-Tsang Chen, Marie-Pierre Francoise Trebert Ep Fouquet