Patents by Inventor Piotr Grodzinski

Piotr Grodzinski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6527890
    Abstract: A micro-gas chromatograph column is formed by texturing a channel into a plurality of green-sheet layers, which are then sintered together to form a substantially monolithic structure. A thick-film paste may be added to the channel textured in the green-sheet layers to provide a porous plug sintered in the micro-gas chromatograph column in the substantially monolithic. A thermal conductivity detector is formed in the substantially monolithic structure by depositing a conductive thick-film paste on the surface of one of the green-sheet layers to define a resistor in an exit channel of the micro-gas chromatograph column.
    Type: Grant
    Filed: December 9, 1999
    Date of Patent: March 4, 2003
    Assignee: Motorola, Inc.
    Inventors: Cynthia G. Briscoe, Huinan Yu, Piotr Grodzinski, Rong-Fong Huang, Jeremy W. Burdon
  • Publication number: 20020132226
    Abstract: An improved and novel ingestible capsule and method for determining medical information from within the alimentary canal of a human or an animal utilizing the ingestible capsule including a non-digestible outer shell that is configured to pass through the alimentary canal. Housed within the non-digestible outer shell is a sensor membrane that is exposed through a portion of the non-digestible outer shell. The sensor membrane is characterized as detecting and identifying predetermined detectable information. Further housed within the non-digestible outer shell are an electronic device that alters its electronic properties in the presence of specific information obtained by the sensor membrane from within the alimentary canal, a bio-sensing circuit that turns on a power source and a low frequency transducer in response to the signal from the electronic device. The low frequency transducer sends a signal of the changed electronic properties to a receiver positioned outside the body.
    Type: Application
    Filed: May 6, 2002
    Publication date: September 19, 2002
    Inventors: Vijay Nair, Piotr Grodzinski, Nada El-Zein, Herbert Goronkin
  • Publication number: 20020115201
    Abstract: A microwave device has a monolithic microwave integrated circuit (MMIC) disposed therein for applying microwave radiation to a microfluidic structure, such as a chamber, defined in the device. The microwave radiation from the MMIC is useful for heating samples introduced into the microfluidic structure and for effecting lysis of cells in the samples. Microfabrication techniques allow the fabrication of MMICs that perform heating and cell lysing of samples having volumes in the microliter to picoliter range.
    Type: Application
    Filed: March 22, 2001
    Publication date: August 22, 2002
    Inventors: Barbara Foley Barenburg, Jeremy Burdon, Yuk-Tong Chan, Xunhu Dai, Sean Gallagher, Piotr Grodzinski, Robert Marrero, Vijay Nair, David Rhine, Thomas Smekal
  • Patent number: 5661075
    Abstract: A substrate (103) having a first stack of DBRs (106), an active region (118), and a second stack of DBRs (138) is provided. An etch mask (146) is formed on the second stack of DBRs (138) and etched. The second stack of DBRs (138), the active region (118), and a portion of the first stack of DBRs (106) are subsequently etched. A portion of the etch mask (146) is removed from the etch mask (146). A material layer (202, 302) is then selectively deposited on portions of the second stack of DBRs (138), the active region (118), and the first stack of DBRs (106) by either selective epitaxial over-growth or mass-transfer processes, thereby passivating the VCSEL (101).
    Type: Grant
    Filed: February 6, 1995
    Date of Patent: August 26, 1997
    Assignee: Motorola
    Inventors: Piotr Grodzinski, Michael S. Lebby
  • Patent number: 5638392
    Abstract: A short wavelength vertical cavity surface emitting laser (101) is provided. A substrate (102) having a surface (103), wherein the substrate (102) includes gallium arsenide phosphide is formed. A first stack of mirrors (106) overlying the first surface (103) of the substrate (102) is formed. A first cladding region (107) is formed overlying the first stack of mirrors (106). An active region (108) is formed overlying the first cladding region (107). A second cladding region (109) is formed overlying the active region (108). A second stack of mirrors (110) is formed overlying the second cladding region (109). A contact region (126) is formed overlying the second stack of mirrors (110).
    Type: Grant
    Filed: May 15, 1995
    Date of Patent: June 10, 1997
    Assignee: Motorola
    Inventors: Jamal Ramdani, Michael S. Lebby, Piotr Grodzinski
  • Patent number: 5557626
    Abstract: Patterned-mirrors for VCSELs are fabricated by forming a first mirror stack of a plurality of pairs of relatively high and low index of refraction layers, forming an active region of aluminum-free material on the first mirror stack, and forming a second mirror stack of a plurality of pairs of relatively high and low index of refraction layers. The second mirror stack includes first and second portions of materials selected to provide different rates of etching between the first and second portions. The second portion is selectively etched to the first portion by utilizing the first portion as an etch stop.
    Type: Grant
    Filed: June 15, 1994
    Date of Patent: September 17, 1996
    Assignee: Motorola
    Inventors: Piotr Grodzinski, Michael S. Lebby, Hsing-Chung Lee
  • Patent number: 5547898
    Abstract: A method for controlling carbon doping levels in a Distributed Bragg Reflectors (DBRs) for a Vertical Cavity Surface Emitting Laser (VCSELs) devices is provided. A first stack of mirrors (105) is deposited on the surface (101) of the substrate (102). A first cladding region (106) is deposited on the first stack of mirrors (105). An active layer (108) is deposited on the first cladding layer (106). A second cladding layer (109) is deposited on the active layer (108). A second stack of mirrors (111) is deposited on the second cladding layer (109) having a carbon doping level controlled by ratio of Group V containing organometallic (tertiarybutylarsine) to Group III organometallics (trimethylgallium and trimethylaluminum).
    Type: Grant
    Filed: September 18, 1995
    Date of Patent: August 20, 1996
    Assignee: Motorola
    Inventors: Piotr Grodzinski, Hsing-Chung Lee, Chan-Long Shieh
  • Patent number: 5530715
    Abstract: A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region.
    Type: Grant
    Filed: November 29, 1994
    Date of Patent: June 25, 1996
    Assignee: Motorola, Inc.
    Inventors: Chan-Long Shieh, Michael S. Lebby, Hsing-Chung Lee, Piotr Grodzinski
  • Patent number: 5478774
    Abstract: A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the active region. A dielectric layer is then formed on the first portion of the second mirror stack, patterned to define an operating region and a remaining portion of the second mirror stack is epitaxially grown on the first portion to form a complete second mirror stack. Portions of the second mirror stack overlying the dielectric layer are polycrystalline in formation and substantially limit the remaining portion of the second mirror stack to the operating region. The polycrystalline layers can then be removed and electrical contacts formed.
    Type: Grant
    Filed: June 15, 1994
    Date of Patent: December 26, 1995
    Assignee: Motorola
    Inventors: Donald E. Ackley, Piotr Grodzinski, Michael S. Lebby, Hsing-Chung Lee, Chan-Long Shieh
  • Patent number: 5446752
    Abstract: A top-emitting vertical cavity surface emitting laser with a current blocking layer at the substrate and offset layers in the mirror stack providing an optical waveguide aligned to the injected current distribution.
    Type: Grant
    Filed: July 7, 1994
    Date of Patent: August 29, 1995
    Assignee: Motorola
    Inventors: Donald E. Ackley, Chan-Long Shieh, Michael S. Lebby, Hsing-Chung Lee, Piotr Grodzinski
  • Patent number: 5432809
    Abstract: Patterned-mirrors for VCSELs are fabricated by forming a first mirror stack of a plurality of pairs of relatively high and low index of refraction layers of AlGaAs, forming an active region of aluminum-free material on the first mirror stack, and forming a second mirror stack of a plurality of pairs of relatively high and low index of refraction layers of AlGaAs. The second mirror stack can be selectively etched to the active region by utilizing the aluminum-free active region as an etch stop.
    Type: Grant
    Filed: June 15, 1994
    Date of Patent: July 11, 1995
    Assignee: Motorola, Inc.
    Inventors: Piotr Grodzinski, Michael S. Lebby, Donald E. Ackley