Abstract: Embodiments of the disclosure include a fault current limiter having a first current splitting device including a primary winding and secondary winding wound around a first core, and a second current splitting device including a primary winding and a secondary winding wound around a second core. The fault current limiter may further include a fault current limiter module (e.g., a switching module) electrically connected in series between the secondary winding of the first current splitting device and the secondary winding of the second current splitting device. The fault current limiter may further include a second fault current limiter module electrically connected in series with the secondary winding of the second current splitting device. By splitting the fault current limiter into parts with fault current limiter modules interspersed between the windings, the fault current limiter may be to be built with less insulation between the windings.

Abstract: Embodiments of the disclosure include a fault current limiter having a first current splitting device including a primary winding and secondary winding wound around a first core, and a second current splitting device including a primary winding and a secondary winding wound around a second core. The fault current limiter may further include a fault current limiter module (e.g., a switching module) electrically connected in series between the secondary winding of the first current splitting device and the secondary winding of the second current splitting device. The fault current limiter may further include a second fault current limiter module electrically connected in series with the secondary winding of the second current splitting device. By splitting the fault current limiter into parts with fault current limiter modules interspersed between the windings, the fault current limiter may be to be built with less insulation between the windings.

Abstract: Embodiments of the disclosure include a fault current limiter (FCL) providing symmetrical electrostatic shielding. In some embodiments, a FCL includes a superconductor maintained at a first voltage greater than zero voltage, and an enclosure containing the superconductor, the enclosure maintained at a second voltage greater than zero voltage, wherein the second voltage is different from the first voltage. The FCL may include an electrical connection directly coupling the superconductor and the enclosure, wherein the electrical connection enables each of a plurality of current limiting modules of the superconductor to receive, during a fault condition, an equal or unequal sub-portion of a total voltage drop.

Abstract: Embodiments of the disclosure include a fault current limiter having a first current splitting device including a primary winding and secondary winding wound around a first core, and a second current splitting device including a primary winding and a secondary winding wound around a second core. The fault current limiter may further include a fault current limiter module (e.g., a switching module) electrically connected in series between the secondary winding of the first current splitting device and the secondary winding of the second current splitting device. The fault current limiter may further include a second fault current limiter module electrically connected in series with the secondary winding of the second current splitting device. By splitting the fault current limiter into parts with fault current limiter modules interspersed between the windings, the fault current limiter may be to be built with less insulation between the windings.

Abstract: A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

Abstract: Embodiments of the disclosure include a fault current limiter (FCL) providing symmetrical electrostatic shielding. In some embodiments, a FCL includes a superconductor maintained at a first voltage greater than zero voltage, and an enclosure containing the superconductor, the enclosure maintained at a second voltage greater than zero voltage, wherein the second voltage is different from the first voltage. The FCL may include an electrical connection directly coupling the superconductor and the enclosure, wherein the electrical connection enables each of a plurality of current limiting modules of the superconductor to receive, during a fault condition, an equal or unequal sub-portion of a total voltage drop.

Abstract: Embodiments of the disclosure include a fault current limiter having a first current splitting device including a primary winding and secondary winding wound around a first core, and a second current splitting device including a primary winding and a secondary winding wound around a second core. The fault current limiter may further include a fault current limiter module (e.g., a switching module) electrically connected in series between the secondary winding of the first current splitting device and the secondary winding of the second current splitting device. The fault current limiter may further include a second fault current limiter module electrically connected in series with the secondary winding of the second current splitting device. By splitting the fault current limiter into parts with fault current limiter modules interspersed between the windings, the fault current limiter may be to be built with less insulation between the windings.

Abstract: A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

Abstract: A solid-state fault current limiter including a current splitting reactor, comprising a system current input, a passive current output and a control current output. A voltage control reactor includes a first end and a second end, the first end coupled to the control current output and the second end coupled to the passive current output. A fault current trigger circuit coupled in parallel with the voltage control reactor and configured to open when a fault current, received by the system current input, exceeds a predefined trigger current. A transient voltage control circuit coupled in parallel with the voltage control reactor to receive the fault current.

Abstract: A solid-state fault current limiter including a current splitting reactor, comprising a system current input, a passive current output and a control current output. A voltage control reactor includes a first end and a second end, the first end coupled to the control current output and the second end coupled to the passive current output. A fault current trigger circuit coupled in parallel with the voltage control reactor and configured to open when a fault current, received by the system current input, exceeds a predefined trigger current. A transient voltage control circuit coupled in parallel with the voltage control reactor to receive the fault current.

Abstract: Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.

Abstract: An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system in the implanter. The modulated power supply system includes a traditional power supply and a control unit associated with each power supply, where the control unit is used to isolate the power supply from an electrode if a glitch or arc is detected. The control unit then restores connectivity after the glitch condition has been rectified.

Abstract: Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.

Abstract: An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.

Abstract: A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.

Abstract: An ion accelerating device includes a series of bushing units and a series of resistor circuit units. Each resistor circuit unit is coupled to one bushing unit. A bushing unit includes three integrated conductors to establish connections to the coupled resistor circuit unit and to an immediately adjacent bushing unit such that a voltage to the bushing unit may be degraded by the resistor circuit unit before reaching the lens and that two bushing units may contact one another directly.

Abstract: An ion accelerating device includes a series of bushing units and a series of resistor circuit units. Each resistor circuit unit is coupled to one bushing unit. A bushing unit includes three integrated conductors to establish connections to the coupled resistor circuit unit and to an immediately adjacent bushing unit such that a voltage to the bushing unit may be degraded by the resistor circuit unit before reaching the lens and that two bushing units may contact one another directly.