Abstract: A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.

Abstract: A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.

Abstract: The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11?, 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11?) into which different gas feed lines (24, 24?) run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.

Abstract: The invention relates to a method and to a device for treating semiconductor substrates. In conventional systems, the especially uncoated semiconductor substrates are fed to a treatment device through a charging sluice, said charging sluice adjoining a transfer chamber. A plurality of treatment chambers can be charged with the semiconductor substrates to be treated from said transfer chamber by first evacuating the transfer chamber and the treatment chamber and then opening the connecting door between the transfer chamber and the treatment chamber. The aim of the invention is to improve this system. To this end, at least one of the treatment chambers is operated at a low pressure or atmospheric pressure and the transfer chamber is flooded with an inert gas before the connecting door associated with the treatment chamber is opened, while a predetermined pressure difference between the transfer chamber and the treatment chamber is maintained.

Abstract: The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

Abstract: The invention relates to a method and to a device for treating semiconductor substrates. In conventional systems, the especially uncoated semiconductor substrates are fed to a treatment device through a charging sluice (1), said charging sluice (1) adjoining a transfer chamber (2). A plurality of treatment chambers (3, 4, 5) can be charged with the semiconductor substrates to be treated from said transfer chamber by first evacuating the transfer chamber (2) and the treatment chamber (3) and then opening the connecting door (7) between the transfer chamber (2) and the treatment chamber (3). The aim of the invention is to improve this system. To this end, at least one of the treatment chambers (4) is operated at a low pressure or atmospheric pressure and the transfer chamber (2) is flooded with an inert gas before the connecting door (8) associated with the treatment chamber (4) is opened, while a predetermined pressure difference between the transfer chamber and the treatment chamber is maintained.

Abstract: The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

Abstract: Disclosed is device for depositing at least one precursor, on at least one substrate, said precursor being present in the liquid or dissolved form. The inventive device comprises at least one storage container for the individual or mixed precursor/s and a reaction chamber in which the substrate/s is/are arranged, the layers being placed on said substrates. The inventive device also comprises a conveying device that conveys the precursor/s from the storage container/s to the area by means of at least one line, whereby the precursor/s are vaporized in said area. Said device further comprises a control unit which controls the conveying device. The invention is characterized in that a sensor unit is provided which detects the amount of the supplied precursors and has an output signal that is applied to the control unit as a real signal. The control unit controls the conveying device in such a way that the mass flow pertaining to the precursors has a mean predetermined value during a given time period.

Abstract: In a method and an apparatus for converting a liquid flow into a gas flow, a liquid flow is introduced into an evaporation volume, the liquid flow is dispersed so as to enlarge the surface of the liquid, the dispersion being not caused by a change of pressure and taking place without admixture of a medium, and the evaporated liquid flow is conducted out of the evaporation volume.