Patents by Inventor Pisist Kumnorkaew

Pisist Kumnorkaew has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8586963
    Abstract: A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: November 19, 2013
    Assignee: Lehigh University
    Inventors: Nelson Tansu, James F. Gilchrist, Yik-Khoon Ee, Pisist Kumnorkaew
  • Publication number: 20130284257
    Abstract: A dye-sensitized solar cell with internal microlens array includes an anodic electrode, a cathodic counter-electrode, and an electrolyte. The anodic electrode includes a porous nano-structured active metal oxide layer having a sensitizer dye adsorbed thereon. In one embodiment, a microlens array comprising a plurality of microlens elements is disposed between the electrodes, and preferably between a transparent substrate of the anodic electrode and active metal oxide layer for dispersing light incident on the substrate to the active oxide layer. In some embodiments, the microlens elements may be convex or concave in configuration. The microlens array improves solar conversion efficiency of the solar cell. A method for forming a microlens array is further provided.
    Type: Application
    Filed: December 30, 2010
    Publication date: October 31, 2013
    Applicant: Lehigh University
    Inventors: James Gilchrist, Mark A. Snyder, Pisist Kumnorkaew
  • Patent number: 8569737
    Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: October 29, 2013
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Xiaohang Li, Hongping Zhao, Guangyu Liu, James Foster Gilchrist, Pisist Kumnorkaew
  • Publication number: 20120217472
    Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.
    Type: Application
    Filed: December 8, 2011
    Publication date: August 30, 2012
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Xiaohang Li, Hongping Zhao, Guangyu Liu, James Foster Gilchrist, Pisist Kumnorkaew
  • Publication number: 20110155999
    Abstract: A conventional semiconductor LED is modified to include a microlenslayer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.
    Type: Application
    Filed: December 8, 2010
    Publication date: June 30, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, James F. Gilchrist, Yik-Khoon Ee, Pisist Kumnorkaew