Abstract: A data storage device includes a memory device and a memory controller. The memory device includes multiple memory blocks which include one or more spare memory blocks not written with data and one or more predetermined memory blocks that are configured as a buffer for receiving data from a host device. The memory controller obtains a total number of remaining erasable count of the memory blocks and determines a setting value of a number of said one or more predetermined memory blocks according to a number of currently remaining spare memory block(s), a number of the predetermined memory block(s) that has/have been written with data among said one or more predetermined memory blocks, a predetermined threshold and the total number of remaining erasable count of the memory blocks, and configures the number of the predetermined memory block(s) as the buffer according to the setting value.

Abstract: A data storage device includes a memory device and a memory controller. The memory device includes multiple predetermined memory blocks that are configured as a buffer for receiving data from a host device. The memory controller performs a write operation in response to a write command, and during the write operation, the memory controller maintains a first quantity count value for counting a number of the predetermined memory block(s) that has/have been written with data, determine a number of the predetermined memory block(s) which is/are released in response to the write operation and maintains a second quantity count value based on this number. After the write operation, the memory controller performs a garbage collection and updates the first quantity count value based on the second quantity count value when determining that the host device has requested to perform a flush operation on the predetermined memory blocks.

Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: Presently provided are inhibitors of TD02 and IDO1 and pharmaceutical compositions thereof, useful for modulating an activity of tryptophan 2,3 dioxygenase and indoleamine 2,3-dioxygenase 1; treating immunosuppression; treating a medical conditions that benefit from the inhibition of tryptophan degradation; enhancing the effectiveness of an anti-cancer treatment comprising administering an anti-cancer agent; and treating tumor-specific immunosuppression associated with cancer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: A data storage device includes a memory device and a memory controller. The memory device includes multiple predetermined memory blocks that are configured as a buffer for receiving data from a host device. The memory controller performs a write operation in response to a write command issued by the host device, and during the write operation, the memory controller maintains a first quantity count value for counting a number of the predetermined memory block(s) that has/have been written with data, determines a number of the predetermined memory block(s) which is/are released in response to the write operation and maintains a second quantity count value based on this number. After the write operation, the memory controller updates the first quantity count value based on the second quantity count value when determining that the host device has requested to perform a flush operation on the predetermined memory blocks.

Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a fourth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), and the fourth repeating unit has a structure of Formula (IV), a structure of Formula (V) or a structure of Formula (VI) wherein A1, A2, A3, Z1, R1, R2, R3 and Q are as defined in the specification.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A data storage device includes a memory device and a memory controller. The memory device includes multiple memory blocks. The memory blocks includes one or more spare memory blocks that are not written with data and one or more predetermined memory blocks that are configured as a buffer for receiving data from a host device. The memory controller is coupled to the memory device and configured to access the memory device. The memory controller is configured to determine a setting value of a number of said one or more predetermined memory blocks according to a number of currently remaining spare memory block(s), a number of the predetermined memory block(s) that has/have been written with data among said one or more predetermined memory blocks and a predetermined threshold, and configure the number of the predetermined memory block(s) as the buffer according to the setting value.

Abstract: An RF testing method is applied between a testing instrument and multiple devices under test at least including a first DUT and a second DUT. The testing instrument includes a signal generator and a signal analyzer. A sync signal is sent to the testing instrument and the first DUT, so that the first DUT occupies the signal generator to receive a testing signal from the signal generator. The first DUT sends an uplink signal to the signal analyzer based on the testing signal to occupy the signal analyzer for signal analysis at a first point in time. The sync signal is sent to the testing instrument and the second DUT, so that the second DUT occupies the signal generator to receive the testing signal from the signal generator at a second point in time. The first point in time is parallel to the second point in time.

Abstract: Provided is a method of producing multiple particulates, the method comprising: (a) dispersing multiple primary particles of an anode active material, having a particle size from 2 nm to 20 ?m, and particles of a polymer foam material, having a particle size from 50 nm to 20 ?m, and an optional adhesive or binder in a liquid medium to form a slurry; and (b) shaping the slurry and removing the liquid medium to form the multiple particulates having a diameter from 100 nm to 50 ?m; wherein at least one of the multiple particulates comprises a polymer foam material having pores and a single or a plurality of the primary particles embedded in or in contact with the polymer foam material, wherein the primary particles have a total solid volume Va, and the pores have a total pore volume Vp, and the volume ratio Vp/Va is from 0.1/1.0 to 10/1.

Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

Abstract: A keyswitch includes a board, a cap located above the board, a membrane circuit board disposed on the board to make first and second engaging structures of the board protrude from first and second holes of the membrane circuit board respectively, and a lifting device. The lifting device is connected to the cap and the board and includes first and second support members. The first support member is movably connected to the cap and has a pivot end portion. The pivot end portion is movably connected to the first and second engaging structures and has a first abutting portion extending toward edges of the first and second holes along a pivot axis of the first engaging structure. The first abutting portion abuts on the membrane circuit board. The second support member rotatably intersects with the first support member and is movably connected to the cap and the board.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A semiconductor memory device includes a substrate having a memory area and a logic circuit area thereon, a first interlayer dielectric layer on the substrate, and a second interlayer dielectric layer on the substrate. An embedded memory cell structure is disposed within the memory area between the first interlayer dielectric layer and the second interlayer dielectric layer. The second interlayer dielectric layer includes a first portion covering the embedded memory cell structure within the memory area and a second portion covering the logic circuit area. A top surface of the first portion is coplanar with a top surface of the second portion.

Abstract: An optical sensing device is disclosed. The optical sensing device includes a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel includes a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer includes at least one first opening corresponding to the sensing element, and the first light shielding layer is overlapped with the driving circuit in a top-view direction of the optical sensing device.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.