Patents by Inventor PO-CHANG JEN

PO-CHANG JEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device for increasing capacitance effective area and effective capacitance value
    Patent number: 11450667
    Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a well, an oxidation layer, a gate electrode and a shared source/drain electrode. The substrate has a first surface and a second surface opposite to each other. The well is formed in the substrate. The substrate and the well have a first conductivity type and a second conductivity type respectively. The oxidation layer is formed in the well. The gate electrode is formed above the first surface and has a first opening. The shared source/drain electrode is formed near the first surface in the oxidation layer and exposed from the first opening. The shared source/drain electrode has the first conductivity type.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: September 20, 2022
    Assignee: Raydium Semiconductor Corporation
    Inventors: Kuan-Hung Chou, Po-Chang Jen, Ming-Heng Tsai
  • Semiconductor Device
    Publication number: 20200091153
    Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a well, an oxidation layer, a gate electrode and a shared source/drain electrode. The substrate has a first surface and a second surface opposite to each other. The well is formed in the substrate. The substrate and the well have a first conductivity type and a second conductivity type respectively. The oxidation layer is formed in the well. The gate electrode is formed above the first surface and has a first opening. The shared source/drain electrode is formed near the first surface in the oxidation layer and exposed from the first opening. The shared source/drain electrode has the first conductivity type.
    Type: Application
    Filed: September 11, 2019
    Publication date: March 19, 2020
    Inventors: KUAN-HUNG CHOU, PO-CHANG JEN, MING-HENG TSAI