Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: A method for producing 1,4-bis(bromodifluoromethyl)tetrafluorobenzene (BFTFB) is disclosed. The target compound is predicted as a very potent monomer for low dielectric constant material. This method comprises the following steps: (a) mixing 1,4-bis(bromodifluoromethyl)tetrafluorobenzene (DFMTFB), a bromination agent, and a solvent (with or without) to form a mixture; (b) heating the mixture under UV radiation; and (c) purifying the resultant to obtain 1,4-bis(bromodifluoromethyl)tetrafluorobenzene (BFTFB) with high purity.

Abstract: A method for producing 1,4-bis(bromodifluoromethyl)tetrafluorobenzene (BFTFB) is disclosed. The target compound is predicted as a very potent monomer for low dielectric constant material. This method comprises the following steps: (a) mixing 1,4-bis(bromodifluoromethyl)tetrafluorobenzene (DFMTFB), a bromination agent, and a solvent (with or without) to form a mixture; (b) heating the mixture under UV radiation; and (c) purifying the resultant to obtain 1,4-bis(bromodifluoromethyl)tetrafluorobenzene (BFTFB) with high purity.