Abstract: Semiconductor packages and methods of fabricating semiconductor packages include bonding structures on a surface of an interposer having non-uniform height dimensions in different regions of the interposer. A plurality of solder connections may contact the pillars and electrically connect the respective pillars of the interposer to corresponding bonding structures on a package substrate. The variation in the heights of the pillars in different regions of the interposer may compensate for warping of the interposer and improve the reliability of the electrical connections between the interposer and the package substrate.

Abstract: A package structure is provided. The package structure includes a first package component and a second package component. The second package component includes a substrate and an electronic component disposed on the substrate, and the first package component is mounted to the substrate. The package structure further includes a ring structure disposed on the second package component and around the first package component. The ring structure has a first foot and a second foot, the first foot and the second foot extend toward the substrate, the electronic component is covered by the ring structure and located between the first foot and the second foot, and the first package component is exposed from the ring structure.

Abstract: A package assembly includes a package substrate, an interposer module on the package substrate, and a package lid on the interposer module and attached to the package substrate. The package lid includes an outer lid including an outer lid material and including an outer lid plate portion. The package lid further includes an inner lid including an inner lid material different than the outer lid material and including an inner lid plate portion attached to a bottom surface of the outer lid plate portion.

Abstract: A semiconductor package including a recessed stiffener ring and a method of forming are provided. The semiconductor package may include a substrate, a semiconductor die bonded to the substrate, an underfill between the semiconductor die and the substrate, and a stiffener ring attached to the substrate, wherein the stiffener ring encircles the semiconductor die in a top view. The stiffener ring may include a recess that faces the semiconductor die.

Abstract: A ring structure on a package substrate is divided into at least four different components, including a plurality of first pieces and a plurality of second pieces. By dividing the ring structure into at least four different components, the ring structure reduces flexibility of the package substrate, which thus reduces stress on a molding compound (e.g., in a range from approximately 1% to approximately 10%). As a result, molding cracking is reduced, which reduces defect rates and increases yield. Accordingly, raw materials, power, and processing resources are conserved that would otherwise be consumed with manufacturing additional packages when defect rates are higher.

Abstract: A semiconductor package includes a die, a first conductive pattern, a second conductive pattern and first and second under-ball metallurgy (UBM) patterns. The first conductive pattern and the second conductive pattern are disposed below and electrically connected to the die, wherein the first conductive pattern has an ellipse-like shape, and the second conductive pattern has a circular shape. The first and second under-ball metallurgy (UBM) patterns correspond to the first and second conductive patterns, the first conductive pattern has a first length, the second conductive pattern has a second length, the first and second UBM patterns have a third length, wherein the first length is larger than the third length and the second length is smaller than the third length.

Abstract: A semiconductor package includes a first die, a second die and a buffer layer. The first die and the second die are stacked on the first die. The buffer layer is disposed on a first sidewall of the second die, wherein a second sidewall opposite to the first sidewall of the second die is flush with a third sidewall of the first die.

Abstract: A package structure is provided. The package structure includes a semiconductor die over a redistribution structure, bonding elements below the redistribution structure, and an underfill layer surrounding the bonding elements and the redistribution structure. The semiconductor die has a rectangular profile in a plan view. A pitch of the bonding elements is defined as the sum of a diameter of the bonding elements and a spacing between neighboring two of the bonding elements. A first circular area of the redistribution structure is entirely covered and in direct contact with the underfill layer. The center of the first circular area is aligned with a first corner of the rectangular profile of the semiconductor die. A diameter of the first circular area is greater than twice the pitch of the bonding elements.

Abstract: A chip package structure is provided. The chip package structure includes a redistribution structure including a dielectric structure and a plurality of wiring layers in or over the dielectric structure. The chip package structure includes a shield bump structure over the redistribution structure and electrically insulated from the wiring layers. The chip package structure includes a first chip structure bonded to the redistribution structure. The first chip structure is electrically insulated from the shield bump structure, and the first chip structure partially overlaps the shield bump structure. The chip package structure includes a second chip structure bonded to the redistribution structure.

Abstract: A semiconductor package and a method of forming the same are provided. The semiconductor package includes a package substrate and a semiconductor device mounted on the surface of the package substrate. A first ring is disposed over the surface of the package substrate and surrounds the semiconductor device. A second ring is disposed over the top surface of the first ring. Also, a protruding part and a matching recessed part are formed on the top surface of the first ring and the bottom surface of the second ring, respectively. The protruding part extends into and engages with the recessed part to connect the first ring and the second ring. An adhesive layer is disposed between the surface of the package substrate and the bottom surface of the first ring for attaching the first ring and the overlying second ring to the package substrate.

Abstract: A package structure is provided. The package structure includes a semiconductor die bonding on a first surface of a redistribution structure through first bonding elements, and a wall structure bonding on the first surface of the redistribution structure through second bonding elements. The wall structure includes a plurality of partitions laterally arranged in a discontinuous ring, and the semiconductor die is located within the discontinuous ring.

Abstract: A semiconductor package includes a redistribution structure, a first die, a second die and a buffer layer. The second die is disposed between the first die and the redistribution structure, and the second die is electrically connected to the first die and bonded to the redistribution structure. The buffer layer is disposed on a first sidewall of the second die, wherein a second sidewall of the buffer layer is substantially flush with a third sidewall of the first die.

Abstract: A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

Abstract: A method for forming a chip package structure is provided. The method includes forming a dielectric layer over a redistribution structure. The redistribution structure includes a dielectric structure and a plurality of wiring layers in or over the dielectric structure. The method includes forming a first conductive bump structure and a shield bump structure over the dielectric layer. The first conductive bump structure is electrically connected to the wiring layers, and the shield bump structure is electrically insulated from the wiring layers. The method includes bonding a first chip structure to the redistribution structure through the first conductive bump structure. The first chip structure is electrically insulated from the shield bump structure, and the first chip structure extends across a first sidewall of the shield bump structure.

Abstract: A method for forming a chip package structure is provided. The method includes disposing a first chip structure and a second chip structure over a wiring substrate. The first chip structure is spaced apart from the second chip structure by a gap. The method includes disposing a ring structure over the wiring substrate. The ring structure has a first opening, the first chip structure and the second chip structure are in the first opening, the first opening has a first inner wall, the first inner wall has a first recess, and the gap extends toward the first recess.

Abstract: Semiconductor devices having improved under-bump metallization layouts and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes an IC die; an interconnect structure coupled to the IC die and including a metallization pattern including a via portion extending through a dielectric layer; a second dielectric layer over the dielectric layer opposite the IC die; and a second metallization pattern coupled to the metallization pattern and including a line portion in the dielectric layer and a second via portion extending through the second dielectric layer; and a UBM over the second metallization pattern and the second dielectric layer, the UBM being coupled to the second metallization pattern, a centerline of the via portion and a second centerline of the second via portion being misaligned with a third centerline of the UBM, the centerline and the second centerline being on opposite sides of the third centerline.

Abstract: A package structure is provided. The package structure includes a substrate and a chip-containing structure bonded to the substrate. The package structure also includes a warpage-control element attached to the substrate. The warpage-control element has a protruding portion extending into the substrate.

Abstract: A package structure is provided. The package structure includes a redistribution structure and a semiconductor die over the redistribution structure, and bonding elements below the redistribution structure. The semiconductor die has a first sidewall and a second sidewall connected to each other. The bonding elements include a first row of bonding elements and a second row of bonding elements. In a plan view, the second row of bonding elements is arranged between the first row of bonding elements and an extending line of the second sidewall. A minimum distance between the second row of bonding elements and the first sidewall is greater than the minimum distance between the first row of bonding elements and the first sidewall.

Abstract: A semiconductor package and a method of forming the same are provided. The semiconductor package includes a package substrate and a semiconductor device mounted on the surface of the package substrate. A first ring is disposed over the surface of the package substrate and surrounds the semiconductor device. A second ring is disposed over the top surface of the first ring. Also, a protruding part and a matching recessed part are formed on the top surface of the first ring and the bottom surface of the second ring, respectively. The protruding part extends into and engages with the recessed part to connect the first ring and the second ring. An adhesive layer is disposed between the surface of the package substrate and the bottom surface of the first ring for attaching the first ring and the overlying second ring to the package substrate.

Abstract: A package structure is provided. The package structure includes a redistribution structure and a first semiconductor die over the redistribution structure. The package structure also includes a wall structure laterally surrounding the first semiconductor die and the wall structure includes a plurality of partitions separated from one another. The package structure also includes an underfill material between the wall structure and the first semiconductor die. The package structure also includes a molding compound encapsulating the wall structure and the underfill material.