Patents by Inventor Po-Chieh Cheng

Po-Chieh Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Anti-reflective silicon nitride film using in-situ deposition
    Patent number: 6174644
    Abstract: An anti-reflective coating and method of forming the anti-reflective coating are described wherein the anti-reflective coating is part of a silicon nitride layer formed on a semiconductor integrated circuit substrate. The anti-reflective coating is formed under the photoresist layer for greater effectiveness but does not disrupt the process flow since the anti-reflective coating is part of the silicon nitride layer. A first silicon nitride layer is formed having an index of refraction of about 2.1. A second silicon nitride layer having an index of refraction of about 1.9 and a second thickness is formed on the first silicon nitride layer. A layer of photoresist is then formed on the second silicon nitride layer. The second thickness is chosen to be equal to the wavelength of the light used to expose the layer of photoresist divided by the quantity of 4 multiplied by 1.9. The second silicon nitride layer acts as an effective anti-reflective layer.
    Type: Grant
    Filed: July 1, 1999
    Date of Patent: January 16, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Meng-Shiun Shieh, Po-Chieh Cheng
  • Anti-reflective silicon nitride film using in-situ deposition
    Patent number: 5948598
    Abstract: An anti-reflective coating and method of forming the anti-reflective coating are described wherein the anti-reflective coating is part of a silicon nitride layer formed on a semiconductor integrated circuit substrate. The anti-reflective coating is formed under the photoresist layer for greater effectiveness but does not disrupt the process flow since the anti-reflective coating is part of the silicon nitride layer. A first silicon nitride layer is formed having an index of refraction of about 2.1. A second silicon nitride layer having an index of refraction of about 1.9 and a second thickness is formed on the first silicon nitride layer. A layer of photoresist is then formed on the second silicon nitride layer. The second thickness is chosen to be equal to the wavelength of the light used to expose the layer of photoresist divided by the quantity of 4 multiplied by 1.9. The second silicon nitride layer acts as an effective anti-reflective layer.
    Type: Grant
    Filed: October 31, 1996
    Date of Patent: September 7, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Meng-Shiun Shieh, Po-Chieh Cheng