Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed in a PFET region and a second source/drain region disposed in an NFET region. The second source/drain region comprises a dipole region. The structure further includes a first silicide layer disposed on and in contact with the first source/drain region, a second silicide layer disposed on and in contact with the first silicide layer, and a third silicide layer disposed on and in contact with the dipole region of the second source/drain region. The first, second, and third silicide layers include different materials. The structure further includes a first conductive feature disposed over the first source/drain region, a second conductive feature disposed over the second source/drain region, and an interconnect structure disposed on the first and second conductive features.

Abstract: Disclosed herein are system, method, and computer program product embodiments for reducing GPU load by programmatically controlling shading rates in computer graphics. GPU load may be reduced by applying different shading rates to different screen regions. By reading the depth buffer of previous frames and performing image processing, thresholds may be calculated that control the shading rates. The approach may be run on any platform that supports VRS hardware and primitive- or image-based VRS. The approach may be applied on a graphics driver installed on a client device, in a firmware layer between hardware and a driver, in a software layer between a driver and an application, or in hardware on the client device. The approach is flexible and adaptable and calculates and sets the variable rate shading based on the graphics generated by an application without requiring the application developer to manually set variable rate shading.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first member. The second electrode includes first and second electrode regions. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial region. The second semiconductor region includes first to third semiconductor portions. At least a part of the third semiconductor portion is between the first semiconductor region and the second electrode region. The second semiconductor portion is between the first semiconductor portion and the third semiconductor region. The first member includes first and second regions.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.

Abstract: According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first member, and a first insulating member. The first semiconductor layer includes Alx1Ga1-x1N (0?x1<1). The first semiconductor layer includes first, second, third, fourth, fifth, and sixth partial regions. The second semiconductor layer includes Alx2Ga1-x2N (0<x2—1, x1<x2). The second semiconductor layer includes first and second semiconductor portions. The first insulating member includes a first insulating region and includes a first material. The first insulating region contacts the third partial region and a part of the third electrode. The first member includes a first portion and includes a second material different from the first material. The first portion is between the fourth partial region and an other part of the third electrode.

Abstract: According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first member, and a first insulating member. The first semiconductor layer includes Alx1Ga1-x1N (0?x1<1). The first semiconductor layer includes first, second, third, fourth, fifth, and sixth partial regions. The second semiconductor layer includes Alx2Ga1-x2N (0<x2?1, x1<x2). The second semiconductor layer includes first and second semiconductor portions. The first insulating member includes a first insulating region and includes a first material. The first insulating region contacts the third partial region and a part of the third electrode. The first member includes a first portion and includes a second material different from the first material. The first portion is between the fourth partial region and an other part of the third electrode.

Abstract: A touch panel assembly includes a touch panel, a flexible circuit board, an input element and a light emitting element. The touch panel includes sensing series and pads. The pads are disposed on bonding regions of the touch panel and electrically connected to the sensing series. The flexible circuit board includes bonding portions and a light guide portion. Each bonding portion is disposed at the bonding region and includes terminals electrically connecting the pads. The light guide portion includes a connecting portion connecting the corresponding bonding portion and an extending portion connecting the connecting portion and extended away from the touch panel. The input element is located right above the extending portion. The light emitting element is disposed at a light incident side of the light guide portion.

Abstract: A panel assembly includes a transparent cover, a display module, a decorative layer, and a Fresnel lens structure. The transparent cover has a lower surface. The display module is disposed under the lower surface. The decorative layer is disposed on the lower surface. The Fresnel lens structure is located above the display module. Besides, an electronic device includes a frame, a housing, and the above panel assembly, and the housing and the panel assembly are installed in the frame.

Abstract: An electronic device including a transparent cover, a transparent film, a display module, a side frame, and a base frame is provided. The transparent film is adhered to the transparent cover. The display module is adhered to the transparent film, such that the transparent film is disposed between the transparent cover and the display module. The transparent film extends to the side frame and is bonded with the side frame. The base frame is connected to the side frame. By extending the transparent film to the side frame and bonding the transparent film with the side frame, the transparent film is capable of stopping liquid, thereby archiving a waterproofing effect. A method for assembling an electronic device is also provided.

Abstract: A touch panel assembly includes a touch panel, a flexible circuit board, an input element and a light emitting element. The touch panel includes sensing series and pads. The pads are disposed on bonding regions of the touch panel and electrically connected to the sensing series. The flexible circuit board includes bonding portions and a light guide portion. Each bonding portion is disposed at the bonding region and includes terminals electrically connecting the pads. The light guide portion includes a connecting portion connecting the corresponding bonding portion and an extending portion connecting the connecting portion and extended away from the touch panel. The input element is located right above the extending portion. The light emitting element is disposed at a light incident side of the light guide portion.

Abstract: A touch panel assembly includes a touch panel and a flexible circuit board structure. The touch panel includes a sensing array, pads and connecting traces. The sensing array includes sensing units. The pads are disposed on a bonding region of the touch panel. The bonding region is located at a side of the sensing array. The connecting traces are located outside the sensing array and electrically connect the sensing units to the pads to actuate the sensing array. The flexible circuit board structure includes bonding portions and at least one key portion. Each bonding portion is disposed at the bonding region and includes a plurality of terminals electrically connected to the pads. The key portion includes a key circuit. The key portion is disposed between any two adjacent bonding portions. The bonding portions and the key portion are arranged along a direction substantially parallel to the side.

Abstract: An electronic device including a transparent cover, a transparent film, a display module, a side frame, and a base frame is provided. The transparent film is adhered to the transparent cover. The display module is adhered to the transparent film, such that the transparent film is disposed between the transparent cover and the display module. The transparent film extends to the side frame and is bonded with the side frame. The base frame is connected to the side frame. By extending the transparent film to the side frame and bonding the transparent film with the side frame, the transparent film is capable of stopping liquid, thereby archiving a waterproofing effect. A method for assembling an electronic device is also provided.

Abstract: A panel assembly includes a transparent cover, a display module, a decorative layer, and a Fresnel lens structure. The transparent cover has a lower surface. The display module is disposed under the lower surface. The decorative layer is disposed on the lower surface. The Fresnel lens structure is located above the display module. Besides, an electronic device includes a frame, a housing, and the above panel assembly, and the housing and the panel assembly are installed in the frame.

Abstract: A light-emitting universal serial bus socket is provided. The structure comprises a housing, an electrical connection board, and a light-emitting unit. The electrical connection board is disposed in the housing. The electrical connection board is a light-guiding structure. In addition, the light-emitting unit is disposed on one side of the electrical connection board. The light-emitting unit emits light, which passes through the electrical connection board and light up. The universal serial bus socket according to the present invention has the light-emitting effect, which facilitates identifying plugs in nocturnal applications as well as enriching creativity.