Abstract: A method for determining parameters of nanostructures, wherein the method includes steps as follows: Firstly, an X-ray reflection intensity measurement curve of a nanostructure to be tested is obtained by radiating the nanostructure to be tested with X-ray. The X-ray reflection intensity measurement curve is compared with an X-ray reflection intensity standard curve to obtain a comparison result. Subsequently, at least one parameter existing in the nanostructure to be tested is determined according to the comparison result.

Abstract: The present invention provides a tuning mechanism for flying pickup heads in data storage devices. The pickup device includes a coil, a pivot, a suspension, and a piezoelectric bender. The piezoelectric bender made by a bi-layer or a multi-layer piezoelectric material is formed on one end of the suspension, and proper voltages applied to the piezoelectric bender via wires enable the piezoelectric bender to undergo both neutral axis displacement and bending deflection. A pickup head is attached to the free end of the piezoelectric bender opposite to the coil, and via the piezoelectric bender, focusing and tracking motion of the pickup head can be tuned at the same time. Furthermore, since the characteristic of the piezoelectric bender is similar to bimetallic elements, the bender can undergo large bending deflection to compensate large deformation of rotating optical disks, so that the flying height of the pickup head can be tuned to maintain a constant focusing distance in reading/writing data.

Abstract: The present invention provides a tuning mechanism for flying pickup heads in data storage devices. The pickup device includes a coil, a pivot, a suspension, and a piezoelectric bender. The piezoelectric bender made by a bi-layer or a multi-layer piezoelectric material is formed on one end of the suspension, and proper voltages applied to the piezoelectric bender via wires enable the piezoelectric bender to undergo both neutral axis displacement and bending deflection. A pickup head is attached to the free end of the piezoelectric bender opposite to the coil, and via the piezoelectric bender, focusing and tracking motion of the pickup head can be tuned at the same time. Furthermore, since the characteristic of the piezoelectric bender is similar to bimetallic elements, the bender can undergo large bending deflection to compensate large deformation of rotating optical disks, so that the flying height of the pickup head can be tuned to maintain a constant focusing distance in reading/writing data.

Abstract: A method of fabricating a MOSFET device, in which a source and drain region has been formed, prior to the formation of an ion implanted channel region, has been developed. The early creation of source and drain region allows a high temperature anneal to be performed, removing damage resulting from the source and drain ion implantation procedures, however without redistribution of channel dopants. The method features creating an opening in an insulator layer, after the source and drain formation, and then forming the channel region in the semiconductor substrate, directly underlying the opening in the insulator layer. A polysilicon gate structure is next formed in the opening, resulting in self-alignment to the underlying channel region.