Patents by Inventor Po-Fan Lin
Po-Fan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240087986Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.Type: ApplicationFiled: November 15, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Publication number: 20240047404Abstract: A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.Type: ApplicationFiled: October 18, 2023Publication date: February 8, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Patent number: 11854936Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.Type: GrantFiled: January 17, 2023Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Patent number: 11830844Abstract: A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.Type: GrantFiled: June 7, 2022Date of Patent: November 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Patent number: 11756852Abstract: A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.Type: GrantFiled: April 14, 2022Date of Patent: September 12, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Publication number: 20230170280Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.Type: ApplicationFiled: January 17, 2023Publication date: June 1, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Patent number: 11574853Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.Type: GrantFiled: June 30, 2020Date of Patent: February 7, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Publication number: 20220302068Abstract: A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.Type: ApplicationFiled: June 7, 2022Publication date: September 22, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Publication number: 20220238408Abstract: A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.Type: ApplicationFiled: April 14, 2022Publication date: July 28, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Patent number: 11380645Abstract: A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.Type: GrantFiled: July 21, 2020Date of Patent: July 5, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Patent number: 11328975Abstract: A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.Type: GrantFiled: July 29, 2020Date of Patent: May 10, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Publication number: 20210407887Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Publication number: 20210159139Abstract: A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.Type: ApplicationFiled: July 29, 2020Publication date: May 27, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin
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Publication number: 20210159201Abstract: A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.Type: ApplicationFiled: July 21, 2020Publication date: May 27, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Hua Yu, Chun-Hui Yu, Jeng-Nan Hung, Kuo-Chung Yee, Po-Fan Lin