Abstract: A semiconductor memory device includes a substrate having a memory area and a logic circuit area thereon, a first interlayer dielectric layer on the substrate, and a second interlayer dielectric layer on the substrate. An embedded memory cell structure is disposed within the memory area between the first interlayer dielectric layer and the second interlayer dielectric layer. The second interlayer dielectric layer includes a first portion covering the embedded memory cell structure within the memory area and a second portion covering the logic circuit area. A top surface of the first portion is coplanar with a top surface of the second portion.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A method of forming the semiconductor device is provided. The method includes following steps. A memory structure is formed over a first conductive line over a substrate and is electrically connected to the first conductive line. A sacrificial layer is formed on the memory structure. A spacer layer is formed to cover the memory structure and the sacrificial layer. A first dielectric layer is formed to cover the spacer layer. A planarization process is performed to remove a portion of the first dielectric layer. A second dielectric layer is formed on the spacer layer and the first dielectric layer. A patterning process is performed to form an opening exposing a portion of the top surface of the sacrificial layer. The sacrificial layer is removed to form a recess. A second conductive line is formed in the opening and the recess to be electrically coupled to the memory structure.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A lift mechanism, comprising: a post, two sliding elements, and a constant force spring. One sliding element supports a display and has a rolling member for rolling contacting a post side of the post. Another sliding element is provided at another post side and fixed with the other sliding element across the post body by a connecting structure, so that the two sliding elements pulling each other slide coherently along the two post sides. The constant force spring is provided at one post end of the post and extends an end fixed to the connecting structure to stop the two sliding elements. A thin-type supporting device comprises the lift mechanism and a flat-shaped support. A post is fixed with two post ends to inner walls of the flat-shaped support, so that the sliding element connected with the display slides along a longitudinal long hole on the flat-shaped support.

Abstract: A lift mechanism, comprising: a post, two sliding elements, and a constant force spring. One sliding element supports a display and has a rolling member for rolling contacting a post side of the post. Another sliding element is provided at another post side and fixed with the other sliding element across the post body by a connecting structure, so that the two sliding elements pulling each other slide coherently along the two post sides. The constant force spring is provided at one post end of the post and extends an end fixed to the connecting structure to stop the two sliding elements. A thin-type supporting device comprises the lift mechanism and a flat-shaped support. A post is fixed with two post ends to inner walls of the flat-shaped support, so that the sliding element connected with the display slides along a longitudinal long hole on the flat-shaped support.