Abstract: A semiconductor device includes semiconductor dies and a redistribution structure. The semiconductor dies are encapsulated in an encapsulant. The redistribution structure extends on the encapsulant and electrically connects the semiconductor dies. The redistribution structure includes dielectric layers and redistribution conductive layers alternately stacked. An outermost dielectric layer of the dielectric layers further away from the semiconductor dies is made of a first material. A first dielectric layer of the dielectric layers on which the outermost dielectric layer extends is made of a second material different from the first material. The first material includes at least one material selected from the group consisting of an epoxy resin, a phenolic resin, a polybenzooxazole, and a polyimide having a curing temperature lower than 250° C.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a first insulating layer, and a conductive pillar over the substrate. The conductive pillar is embedded in the first insulating layer, and a top surface of the conductive pillar is exposed by the first insulating layer. The method includes forming a second insulating layer over the first insulating layer and the conductive pillar. The second insulating layer has a hole over the top surface of the conductive pillar. The method includes forming a conductive via structure in the hole and a conductive line over the conductive via structure and the second insulating layer. The conductive via structure has a first strip shape in a first top view of the conductive via structure.

Abstract: A semiconductor package including a plurality of semiconductor devices, an insulating layer, and a redistribution layer is provided. The insulating layer is disposed over the semiconductor device. The redistribution layer is disposed over the insulating layer and electrically connected to the semiconductor device. The redistribution layer includes a conductive line portion. The semiconductor package has a stitching zone, and the insulating layer has a ridge structure on a surface away from the semiconductor device and positioned within the stitching zone.

Abstract: A method for communicating directly with commodity Wi-Fi transceivers (TRXs) via backscatter modulation in an integrated tag device is provided. The method includes sensing an incident Wi-Fi? compliant wake-up signal. The method than reflects the incident Wi-Fi-complaint wake-up signal by encoding data from the tag device such that the reflected signal follows the Wi-Fi standard compliant and can be decoded by another WiFi-device. An integrated device includes a downlink Wi-Fi compatible wake-up receiver that checks timing of Wi-Fi compatible signals for a wake-up packet. The device has a modulator that is turned on in response to the wake-up packet and a mixer in the modulator hat mixes tag data with a payload packet from received Wi-Fi payload. Backscatter switches backscatter the response.

Abstract: An embodiment semiconductor package structure may include a first redistribution layer and a first semiconductor die attached to the first redistribution layer. The first semiconductor die may include first front-side electrical contacts and first back-side electrical contacts such that the first front-side electrical contacts are electrically connected to the first redistribution layer. The semiconductor package structure may further include a second redistribution layer formed over the first semiconductor die such that the second redistribution layer is electrically connected to the first back-side electrical contacts of the first semiconductor die and to a second semiconductor die attached to the second redistribution layer and positioned vertically over the first semiconductor die. The first semiconductor die may include at least two alignment marks separated by at least 50 microns.

Abstract: A semiconductor package and a method of forming the same are provided. The semiconductor package includes an interconnect structure, first connectors, a die, second connectors, a circuit board and a mark structure. The interconnect structure includes vias and lines stacked alternately and electrically connected to each other and embedded by polymer layers. The first connectors are disposed on a first side of the interconnect structure. The die is bonded to the first connectors. The second connectors are disposed on a second side of the interconnect structure. The circuit board is bonded to the second connectors. The mark structure is embedded in a first polymer layer among the polymer layers closest to the die and electrically insulated from the vias, the lines and the first connectors.

Abstract: A package structure includes a first redistribution layer, a semiconductor die and a second redistribution layer. The first redistribution layer includes a first dielectric layer, first conductive elements, second conductive elements, a top dielectric layer and an auxiliary dielectric portion. The first conductive elements and the second conductive elements are disposed on the first dielectric layer with a first pattern density and a second pattern density respectively. The top dielectric layer is disposed on the first dielectric layer and covering a top surface of the second conductive elements. The auxiliary dielectric portion is disposed in between the first dielectric layer and the top dielectric layer, and covering a top surface of the first conductive elements. The semiconductor die is disposed on the first redistribution layer. The second redistribution layer is disposed on the semiconductor die, and electrically connected to the semiconductor die and the first redistribution layer.

Abstract: A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a first portion of the photoresist corresponding to a first opaque portion of the first stitching region is unexposed. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, and a second portion of the photoresist corresponding to a second opaque portion of the second stitching region is unexposed and is overlapping with the first portion of the photoresist.

Abstract: A semiconductor package and a formation method thereof are provided. The method includes: providing a device wafer, with a barrier layer covering a back surface of a semiconductor substrate, and having a through substrate via (TSV) penetrating through the barrier layer and extending into the semiconductor substrate; defining an alignment mark over the back surface of the semiconductor substrate; forming a seed layer over the back surface of the semiconductor substrate, wherein the seed layer has a recess portion corresponding to the alignment mark; forming a mask layer on the seed layer; performing a lithography process by using a redefined alignment mark formed by the recess portion of the seed layer, to form an opening through the mask layer and overlapping the TSV; filling a conductive structure in the opening; removing the mask layer and portions of the seed layer around the conductive structure; and singulating the processed device wafer.

Abstract: A method includes forming a conductive pillar over and connecting to a conductive pad, dispensing a first polymer layer, wherein the first polymer layer contacts a lower portion of a sidewall of the conductive pillar, curing the first polymer layer, and dispensing a second polymer layer on the first polymer layer. The second polymer layer contacts an upper portion of the sidewall of the conductive pillar. The second polymer layer is then cured.

Abstract: A method of forming a semiconductor package includes: surrounding a die with a molding material; and forming a redistribution structure (RDS) over the molding material and electrically coupled to the die, which includes: depositing a first dielectric layer over the molding material; patterning the first dielectric layer to form first openings in the first dielectric layer; performing a first descum process to clean the first openings; after performing the first descum process, forming a first redistribution layer (RDL) on the first dielectric layer; depositing a second dielectric layer over the molding material; patterning the second dielectric layer to form second openings in the second dielectric layer; performing a second descum process to clean the second openings, where the first and second descum processes are performed under different process conditions; and after performing the second descum process, forming a second RDL on the second dielectric layer.

Abstract: A fan-out package includes a molding compound die frame laterally surrounding at least one semiconductor die; and an organic interposer including redistribution dielectric layers embedding redistribution wiring interconnects and located on a first horizontal surface of the molding compound die frame. An alignment mark region including a localized recess region is located within an opening in a second horizontal surface of the molding compound die frame. The localized recess region extends from the second horizontal surface toward the organic interposer.

Abstract: An apparatus and a method for effectively exhausting evaporated material are provided. In an embodiment the apparatus includes a hot plate and an exhaust hood assembly suspended over the hot plate. The exhaust hood assembly includes a trench plate, a cover plate over the trench plate and a single exhaust pipe header over and attached to a single exhaust opening of the cover plate. During operation, the exhaust hood assembly reduces the amount of condensation and also collects any remaining condensation in order to help prevent condensation from impacting further manufacturing steps.

Abstract: A method of fabricating a redistribution circuit structure including the following steps is provided. A conductive via is formed. A photosensitive dielectric layer is formed to cover the conductive via. The photosensitive dielectric layer is partially removed to reveal the conductive via at least through an exposure and development process. A redistribution wiring is formed on the photosensitive dielectric layer and the revealed conductive via.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of semiconductor dies, a dielectric layer, a connector, and a passivation layer. The plurality of semiconductor dies are stacked on one another and disposed over the semiconductor substrate. The dielectric layer cover a top surface and a side surface of the each of the plurality of semiconductor dies. The connector is disposed over a topmost one of the plurality of semiconductor dies. The passivation layer is disposed over the dielectric layer and laterally surrounds the connector, wherein, from a cross sectional view, an acute angle is included between an outermost side surface of the passivation layer and a bottom surface of the passivation layer.

Abstract: A method includes forming a metal post over a first redistribution structure; attaching a first device die to the first redistribution structure, the first device die comprising a through via embedded in a semiconductor substrate; encapsulating the metal post and the first device die in an encapsulant, a first top surface of the encapsulant being level with a second top surface of the semiconductor substrate; recessing the second top surface to expose the through via; forming a dielectric isolation layer around the through via; forming a dielectric layer over the dielectric isolation layer; etching the dielectric layer to form a first opening and a second opening in the dielectric layer; forming a first metal via in the first opening and a second metal via in the second opening; and forming a second redistribution structure over the dielectric layer.

Abstract: A method of fabricating a redistribution circuit structure including the following steps is provided. A conductive via is formed. A photosensitive dielectric layer is formed to cover the conductive via. The photosensitive dielectric layer is partially removed to reveal the conductive via at least through an exposure and development process. A redistribution wiring is formed on the photosensitive dielectric layer and the revealed conductive via.

Abstract: An apparatus and a method for effectively exhausting evaporated material are provided. In an embodiment the apparatus includes a hot plate and an exhaust hood assembly suspended over the hot plate. The exhaust hood assembly includes a trench plate, a cover plate over the trench plate and a single exhaust pipe header over and attached to a single exhaust opening of the cover plate. During operation, the exhaust hood assembly reduces the amount of condensation and also collects any remaining condensation in order to help prevent condensation from impacting further manufacturing steps.

Abstract: A semiconductor package including a plurality of semiconductor devices, an insulating layer, and a redistribution layer is provided. The insulating layer is disposed over the semiconductor device. The redistribution layer is disposed over the insulating layer and electrically connected to the semiconductor device. The redistribution layer includes a conductive line portion. The semiconductor package has a stitching zone, and the insulating layer has a ridge structure on a surface away from the semiconductor device and positioned within the stitching zone.

Abstract: Embodiments include a method for forming an integrated circuit package. A first dielectric layer is deposited over a wafer, the first dielectric layer overlapping a package region and a scribe line region of the wafer. A first metallization pattern is formed extending along and through the first dielectric layer. A second dielectric layer is deposited over the first metallization pattern and the first dielectric layer, the second dielectric layer overlapping the package region and the scribe line region. The second dielectric layer is removed from the scribe line region, the second dielectric layer remaining in the package region. After the second dielectric layer is removed from the scribe line region, a second metallization pattern is formed extending along and through the second dielectric layer. The wafer and the first dielectric layer are sawed in the scribe line region.