Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: An interconnect structure includes a plurality of first pads arranged to form a first array and a plurality of second pads arranged to form a second array. Each of the first array has a first row, a second row and an mth row extending along a first direction and parallel to each other along a second direction. The first pads in each of the first row, the second row and the mth row are grouped into a first group, a second group and an nth group extending along the second direction. The second pads in each of the first row, the second row and the mth row are grouped into a first group, a second group and an nth group extending along the second direction. The interconnect structure further includes a plurality of first conductive lines, a plurality of second conductive lines and a plurality of nth conductive lines.

Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: A three dimensional Integrated Circuit (IC) Power Grid (PG) may be provided. The three dimensional IC PG may comprise a first IC die, a second IC die, an interface, and a power distribution structure. The interface may be disposed between the first IC die and the second IC die. The power distribution structure may be connected to the interface. The power distribution structure may comprise at least one Through-Silicon Vias (TSV) and a ladder structure connected to at least one TSV.

Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.

Abstract: A backpack includes a strapping member and a base structure. At least two straps are disposed on a first surface of the strapping member and at least one pivotal structure is disposed on a second surface thereof. The base structure includes a plate member, at least one storing structure, and at least one containing structure. The plate member is pivoted to the strapping member via the pivotal structure. The storing structure and the containing structure are disposed on a second surface of the plate member which corresponds to the second surface of the strapping member. The containing structure includes an upper containing structure and a lower containing structure for accommodating fluid. A connecting structure is connected between the upper containing structure and the lower containing structure, and a stopper structure is disposed on the connecting structure.

Abstract: An ampoule opener is provided. The ampoule opener includes a clamping element and a cylindrical sleeve element. The clamping element includes a plurality of clamping arms. Each one of the plurality of clamping arms includes a clamping terminal. The cylindrical sleeve element is disposed around the clamping element. The cylindrical sleeve element is adapted to move back and forth along the clamping arms thereby adjusting an interval of each two adjacent clamping terminals. The ampoule opener is capable of breaking off ampoules with various calibers due to that the interval between the clamping terminals can be adjusted by moving the cylindrical sleeve element.

Abstract: An apparatus for fastening and carrying bottles includes a support ring and a connecting device. The support ring is inherently formed on the bottle and has at least an opening. The connecting device engages the opening of the support ring to allow people to carry the bottle by holding the connecting device or by engaging the connecting device with an object. The apparatus has many advantages, including never loss, low cost for manufacture, and recycle.