Abstract: One example method for biomarker detection in digitized pathology samples includes receiving a plurality of image patches corresponding to an image of a pathology slide having a hematoxylin and eosin-stained (“H&E”) stained sample of tissue, each image patch representing a different portion of the image; for each image patch, determining, using a first trained machine learning (“ML”) model, a patch biomarker status; and determining, using a second trained ML model, a tissue sample biomarker status for the sample of tissue based on the patch biomarker statuses of the image patches.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: The present disclosure provides a method for manufacturing an auto-crosslinked hyaluronic acid gel, comprising conducting auto-crosslinking reaction of a colloid containing hyaluronic acid continuously at low temperature in an acidic environment, and treating the reaction product with steam at high temperature to obtain the auto-crosslinked hyaluronic acid gel with high viscosity.

Abstract: A wide area atmospheric pressure plasma device includes a metal casing, a metal electrode, and a dielectric layer. The metal casing includes a chamber, at least one gas channel, and a plasma jet channel, in which the plasma jet channel is located under the chamber. The metal electrode is disposed within the chamber, is adjacent to the plasma jet channel, and extends along a length direction of the plasma jet channel. An outlet of the gas channel is adjacent to a bottom of the metal electrode, such that a working gas in the gas channel is sprayed towards the bottom of the metal electrode. The dielectric layer wraps the metal electrode.

Abstract: A spot type atmospheric pressure plasma device includes a metal casing, a metal electrode, a dielectric layer, and a gas channel. The metal electrode is disposed in an inner space of the metal casing. The dielectric layer is disposed in the inner space and surrounds an outer side surface of the metal electrode. A central area of a bottom of the dielectric layer has a plasma jet, and a bottom of the metal electrode is adjacent to the plasma jet. The gas channel includes a first section, a second section, and a third section. The first section passes through the metal casing and the dielectric layer. The second section is connected to the first section and extends between the dielectric layer and the outer side surface. The third section is connected to the second section, and is configured to direct a working gas to the plasma jet.

Abstract: An antenna structure and an electronic apparatus are provided. The antenna structure includes a substrate, a first radiation part, and a second radiation part. The substrate has a first surface and a second surface opposite to each other. The first radiation part is disposed on the first surface. The first radiation part is an absorber material. The second radiation part is disposed on the second surface. The second radiation part is coupled to a feeding part. There is a distance between the second radiation part and the first radiation part, so as to excite a first resonance mode through the coupling of the second radiation part to the first radiation part. Accordingly, the specific absorption rate (SAR) value of the electromagnetic wave is reduced.

Abstract: A memory cell includes a substrate. A first STI and a second STI are embedded within the substrate. The first STI and the second STI extend along a first direction. An active region is disposed on the substrate and between the first STI and the second STI. A control gate is disposed on the substrate and extends along a second direction. The first direction is different from the second direction. A tunneling region is disposed in the active region overlapping the active region. A first trench is embedded within the tunneling region. Two second trenches are respectively embedded within the first STI and the second STI. The control gate fills in the first trench and the second trenches. An electron trapping stack is disposed between the tunneling region and the control gate.

Abstract: A memory cell includes a substrate. A first STI and a second STI are embedded within the substrate. The first STI and the second STI extend along a first direction. An active region is disposed on the substrate and between the first STI and the second STI. A control gate is disposed on the substrate and extends along a second direction. The first direction is different from the second direction. A tunneling region is disposed in the active region overlapping the active region. A first trench is embedded within the tunneling region. Two second trenches are respectively embedded within the first STI and the second STI. The control gate fills in the first trench and the second trenches. An electron trapping stack is disposed between the tunneling region and the control gate.

Abstract: A memory cell includes a substrate. A first STI and a second STI are embedded within the substrate. The first STI and the second STI extend along a first direction. An active region is disposed on the substrate and between the first STI and the second STI. A control gate is disposed on the substrate and extends along a second direction. The first direction is different from the second direction. A tunneling region is disposed in the active region overlapping the active region. A first trench is embedded within the tunneling region. Two second trenches are respectively embedded within the first STI and the second STI. The control gate fills in the first trench and the second trenches. An electron trapping stack is disposed between the tunneling region and the control gate.

Abstract: A memory cell includes a substrate. A first STI and a second STI are embedded within the substrate. The first STI and the second STI extend along a first direction. An active region is disposed on the substrate and between the first STI and the second STI. A control gate is disposed on the substrate and extends along a second direction. The first direction is different from the second direction. A tunneling region is disposed in the active region overlapping the active region. A first trench is embedded within the tunneling region. Two second trenches are respectively embedded within the first STI and the second STI. The control gate fills in the first trench and the second trenches. An electron trapping stack is disposed between the tunneling region and the control gate.

Abstract: A method for fabricating gate structures includes providing a substrate, configured to have a first region and a second region. Dummy gate structures are formed on the substrate at the first and second regions, wherein each of the dummy gate structures has a first gate insulating layer on the substrate and a dummy gate on the first gate insulating layer. An inter-layer dielectric layer is formed over the dummy gate structures. The inter-layer dielectric layer is polished to expose all of the dummy gates. The dummy gates are removed. The first gate insulating layer at the second region is removed. A second gate insulating layer is formed on the substrate at the second region, wherein the first gate insulating layer is thicker than the second insulating layer. Metal gates are formed on the first and the second insulating layer.

Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a substrate, a first gate structure disposed on the substrate, a second gate structure disposed on the substrate, and a memory gate structure disposed on the substrate and between the first gate structure and the second gate structure. The memory gate structure at least covers the first gate structure and the second gate structure. The memory gate structure includes a charge storage layer disposed on the substrate and a memory gate layer disposed on the charge storage layer.

Abstract: A dustproof device for laptops comprises a heat dissipating device disposed in a laptop to form a dustproof device for the same, wherein the heat dissipating device is disposed on a main computing unit in an interior of the laptop; the heat dissipating device includes a fan set and a heat dissipating fin. The fan set includes a housing, a rotating section and a guiding device, wherein on a lateral side of the housing is disposed an opening, the rotating section is disposed inside the housing, the guiding device is disposed inside the housing between the rotating section and a lateral side of the opening, and a dust removing path is formed between the guiding device and an inner wall surface of the housing adjacent to the guiding device.

Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a substrate, a first gate structure disposed on the substrate, a second gate structure disposed on the substrate, and a memory gate structure disposed on the substrate and between the first gate structure and the second gate structure. The memory gate structure at least covers the first gate structure and the second gate structure. The memory gate structure includes a charge storage layer disposed on the substrate and a memory gate layer disposed on the charge storage layer.

Abstract: A method for fabricating gate structures includes providing a substrate, configured to have a first region and a second region. Dummy gate structures are formed on the substrate at the first and second regions, wherein each of the dummy gate structures has a first gate insulating layer on the substrate and a dummy gate on the first gate insulating layer. An inter-layer dielectric layer is formed over the dummy gate structures. The inter-layer dielectric layer is polished to expose all of the dummy gates. The dummy gates are removed. The first gate insulating layer at the second region is removed. A second gate insulating layer is formed on the substrate at the second region, wherein the first gate insulating layer is thicker than the second insulating layer. Metal gates are formed on the first and the second insulating layer.

Abstract: A dustproof device for laptops comprises a heat dissipating device disposed in a laptop to form a dustproof device for the same, wherein the heat dissipating device is disposed on a main computing unit in an interior of the laptop; the heat dissipating device includes a fan set and a heat dissipating fin. The fan set includes a housing, a rotating section and a guiding device, wherein on a lateral side of the housing is disposed an opening, the rotating section is disposed inside the housing, the guiding device is disposed inside the housing between the rotating section and a lateral side of the opening, and a dust removing path is formed between the guiding device and an inner wall surface of the housing adjacent to the guiding device.

Abstract: A charging apparatus for electric vehicle may comprise a charging apparatus and an electric vehicle. The charging apparatus has a rectifier and a mobile connector, and the connector covered by a plastic cover has a primary coil electrically connected to the rectifier. The cover comprises a vertical first plane, and a plurality of first engaging portions formed at an outer periphery of the cover. The electric vehicle has a converter, a battery pack and a charge port, and the charge port covered by a plastic shell comprises a secondary coil electrically connected to the converter. The charge port has a vertical second plane and at least a second engaging portion. When the first plane of the connector is coupled to the second plane of the charge port, the primary coil and the secondary coil are spaced apart by a fixed distance, thereby achieving the effect of safe charging.

Abstract: A charging apparatus for electric vehicle may comprise a charging apparatus and an electric vehicle. The charging apparatus has a rectifier and a mobile connector, and the connector covered by a plastic cover has a primary coil electrically connected to the rectifier. The cover comprises a vertical first plane, and a plurality of first engaging portions formed at an outer periphery of the cover. The electric vehicle has a converter, a battery pack and a charge port, and the charge port covered by a plastic shell comprises a secondary coil electrically connected to the converter. The charge port has a vertical second plane and at least a second engaging portion. When the first plane of the connector is coupled to the second plane of the charge port, the primary coil and the secondary coil are spaced apart by a fixed distance, thereby achieving the effect of safe charging.

Abstract: A plant cultivating apparatus may comprise a cultivating unit, a plurality of cultivating cups, a nutrient bucket, a motor, a temperature adjusting unit, a temperature and humidity sensor, and a control unit. The control unit, which is electrically connected to the motor, the temperature adjusting unit and the sensor, is configured to receive environmental data such as temperature and humidity from the sensor and to turn on/off the motor or/and the temperature adjusting unit according to the received data.