Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: An observation carrier for a microscope is provided. The observation carrier includes a bottom base, an upper cover, and a chip. The upper cover is detachably disposed on the bottom base and has a window. The chip is integrated on the upper cover and includes a main body and a plurality of electrodes. The main body has an observation region, and the observation region corresponds to the window and is adapted to carry a sample material. The electrodes are disposed on the main body and are connected to the observation region.

Abstract: The present disclosure provides a toughened resin composition, which includes: (A) a toughened and modified compound, which includes a styrene maleic anhydride compound, an anhydride grafted olefin polymer, and a diisocyanate compound; (B) a thermosetting polymer; and (C) a toughening resin; wherein, in the toughened and modified compound, the diisocyanate compound forms a polyimide bond with the styrene maleic anhydride compound and the anhydride grafted olefin polymer, respectively. The present disclosure has high toughness and excellent mechanical properties; thus, it may have a wide range of applications in the fields of electronics, aerospace and the like.

Abstract: The invention relates to a polyimide containing polymaleic anhydride having the formula: wherein X represents functional groups having carbon chain with carbon numbers more than 10, benzene ring and a combination of carbon chain with carbon numbers more than 10 and benzene ring; and m, n and l are integers, and larger than or equal to 1.

Abstract: The invention provides a method for manufacturing an organic-inorganic hybrid material film. The method mainly comprises hybridization of polymaleic anhydride-polyimide and silica by sol-gel route and by using a silane coupling agent to produce a structure of polymaleic anhydride-polyimide having silane, then casting and curing to form a material film. Also, the invention provides a polymaleic anhydride-polyimide-silica organic-inorganic hybrid material film.

Abstract: The invention relates to a polyimide containing polymaleic anhydride having the formula: wherein X represents functional groups having carbon chain with carbon numbers more than 10, benzene ring and a combination of carbon chain with carbon numbers more than 10 and benzene ring; and m, n and l are integers, and larger than or equal to 1.