Abstract: A fuel tank cap includes a seal cap body and a detaching-proof unit. The cap body has a handheld wall and a surrounding wall that extends from the handheld wall and that is formed with an engaging groove. The detaching-proof unit includes a ring sleeve member and a connection member. The ring sleeve member has an outer ring wall that surrounds the surrounding wall, and a resilient wall that extends the outer ring wall and that is engaged resiliently with the engaging groove. The connection member is connected to the ring sleeve member to be connected to a cap installation portion of a vehicle body.

Abstract: A method is provided for forming a redistribution layer (RDL) structure. An RDL feature is formed over a die, and the RDL feature is electrically connected to a contact of the die. A passivation layer is formed over the RDL feature. A patterned etch mask layer is formed over the passivation layer, and has an opening over a portion of the RDL feature. The passivation layer is patterned using the patterned etch mask layer disposed thereon. The patterned etch mask layer is removed after the passivation layer is patterned using the patterned etch mask layer disposed thereon. The passivation layer is etched to form a passivation opening in the passivation layer, and the portion of the RDL feature is exposed through the passivation opening.

Abstract: In order to reduce the incidence of stress concentration areas in an etched opening, a thinner polyimide layer is deposited to minimize gap formation therein, and a descum process is then performed to increase the angle of the presented layer surface. Reduction of the stress in this manner reduces the incidence of cracking of the later formed metal contact, which improves the overall pass rates of semiconductor devices so manufactured.

Abstract: An LDMOS transistor device includes a stepped isolation structure over a substrate, a gate electrode disposed over a portion of the stepped isolation structure, a source region disposed in the substrate, and a drain region disposed in the substrate. The stepped isolation structure includes a first portion having a first thickness, and a second portion having a second thickness greater than the first thickness. The second portion includes dopants. The drain region is adjacent to the stepped isolation structure.

Abstract: A fan management system includes a fan and a server. The fan includes a driving circuit, and the driving circuit is configured for driving the fan. The fan operates in an operation mode. The server is connected to the fan and is configured for controlling the operation of the fan. The driving circuit outputs a digital label signal when the fan operates abnormally, and the server obtains a production history, an operation information and a warning message of the fan through the digital label signal. The server adjusts the operation mode of the fan according to the warning message simultaneously.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

Abstract: Thermal dissipation and grounding of integrated circuit (IC) devices with backside power delivery networks are discussed. An IC device layer between frontside and backside interconnect sections, composed mostly of an insulating material, is coupled to a crystalline heat spreader or a metal thermal ground layer by an array of thermal pillars extending through the insulating material. The crystalline heat spreader layer may include one or more thermal sensors, such as thermal sensing diodes, also coupled to the IC device layer by one or more thermal pillars. The IC device layer and crystalline layers are coupled by a hybrid bond, which forms the thermal pillars through a continuous section of the insulating material.