Patents by Inventor Pojen CHUANG

Pojen CHUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9373709
    Abstract: An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: June 21, 2016
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Tse-Ming Chen, Sheng-Chin Ho, Pojen Chuang
  • Publication number: 20150364583
    Abstract: An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.
    Type: Application
    Filed: June 12, 2015
    Publication date: December 17, 2015
    Inventors: Tse-Ming CHEN, Sheng-Chin HO, Pojen CHUANG