Patents by Inventor Po-Jen Hsiao

Po-Jen Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12004431
    Abstract: A semiconductor device includes a bottom electrode; a magnetic tunneling junction (MTJ) element over the bottom electrode; a top electrode over the MTJ element; and a sidewall spacer abutting the MTJ element, wherein at least one of the bottom electrode, the top electrode, and the sidewall spacer includes a magnetic material.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsung-Chieh Hsiao, Po-Sheng Lu, Wei-Chih Wen, Liang-Wei Wang, Yu-Jen Wang, Dian-Hau Chen, Yen-Ming Chen
  • Patent number: 11913925
    Abstract: A sensing device is provided. The sensing device includes a processing circuit and a multi-sensor integrated single chip. The multi-sensor integrated single chip includes a substrate and a temperature sensor, a pressure sensor, and an environmental sensor disposed on the substrate. The temperature sensor senses temperature. The pressure sensor senses pressure. The environmental sensor senses an environmental state. The processing circuit obtains a first sensed temperature value from the temperature sensor when the environmental sensor does not operate, and it obtains a second sensed temperature value from the temperature sensor when the environmental sensor operates. The processing circuit obtains a sensed pressure value from the pressure sensor. The processing circuit obtains at least one temperature calibration reference of the pressure sensor according to the first and second sensed temperature values and calibrates the sensed pressure value according to the temperature calibration reference.
    Type: Grant
    Filed: December 17, 2020
    Date of Patent: February 27, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ying-Che Lo, Yu-Sheng Lin, Po-Jen Su, Ting-Hao Hsiao
  • Publication number: 20200011882
    Abstract: A method for calculating glomerular filtration rate (GFR) is revealed. A circumference of a patent's neck is measured and then is substituted into an exponential formula together with clinical factors and patient's age for estimating GFR. The present method has a better performance compared with methods for evaluating renal function by GFR available now. The methods available now have poor performance in prediction of loss of renal function at early stage. Some patients are diagnosed at an advanced stage so that they miss the opportunity of early treatment.
    Type: Application
    Filed: August 14, 2018
    Publication date: January 9, 2020
    Inventors: PO-JEN HSIAO, YUN-WEN SHIH, CHI-MING CHU, SHIH-TAI CHANG
  • Patent number: 9608022
    Abstract: A color filter array, for an image sensing device, includes a plurality of filter patterns. Each filter pattern includes at least one first filter, corresponding to a first wavelength range of a first color; at least one second filter, corresponding to a second wavelength range of a second color; at least one third filter, corresponding to a third wavelength range of a third color; at least one fourth filter, corresponding to a first infrared wavelength range, wherein the first infrared wavelength range is an intersection of the first wavelength range and the second wavelength range; and at least one fifth filter, corresponding to a second infrared wavelength range, wherein the second infrared wavelength range is an intersection of the first wavelength range and the third wavelength range.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: March 28, 2017
    Assignee: NOVATEK Microelectronics Corp.
    Inventors: I-Hsiu Chen, Shu-Fang Wang, Po-Jen Hsiao
  • Publication number: 20160064434
    Abstract: A color filter array, for an image sensing device, includes a plurality of filter patterns. Each filter pattern includes at least one first filter, corresponding to a first wavelength range of a first color; at least one second filter, corresponding to a second wavelength range of a second color; at least one third filter, corresponding to a third wavelength range of a third color; at least one fourth filter, corresponding to a first infrared wavelength range, wherein the first infrared wavelength range is an intersection of the first wavelength range and the second wavelength range; and at least one fifth filter, corresponding to a second infrared wavelength range, wherein the second infrared wavelength range is an intersection of the first wavelength range and the third wavelength range.
    Type: Application
    Filed: November 24, 2014
    Publication date: March 3, 2016
    Inventors: I-Hsiu Chen, Shu-Fang Wang, Po-Jen Hsiao
  • Patent number: 9214487
    Abstract: An image sensor including a plurality of sensing pixels, a plurality of micro-lenses disposed on the sensing pixels and a plurality of first light distributing elements disposed between the sensing pixels and the micro-lenses is provided. Each of the first light distributing elements includes a first refractive index pattern and a second refractive index pattern surrounding the first refractive index pattern. The refractive index of the first refractive index pattern is larger than the refractive index of the second refractive index pattern.
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: December 15, 2015
    Assignee: Novatek Microelectronics Corp.
    Inventors: I-Hsiu Chen, Shu-Fang Wang, Po-Jen Hsiao
  • Publication number: 20140332664
    Abstract: An image sensor including a plurality of sensing pixels, a plurality of micro-lenses disposed on the sensing pixels and a plurality of first light distributing elements disposed between the sensing pixels and the micro-lenses is provided. Each of the first light distributing elements includes a first refractive index pattern and a second refractive index pattern surrounding the first refractive index pattern. The refractive index of the first refractive index pattern is larger than the refractive index of the second refractive index pattern.
    Type: Application
    Filed: December 3, 2013
    Publication date: November 13, 2014
    Applicant: Novatek Microelectronics Corp.
    Inventors: I-Hsiu Chen, Shu-Fang Wang, Po-Jen Hsiao