Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on sidewalls of gate structure, a second spacer on sidewalls of the first spacer, a polymer block adjacent to the first spacer and on a corner between the gate structure and the substrate, an interfacial layer under the polymer block, and a source/drain region adjacent to two sides of the first spacer. Preferably, the polymer block is surrounded by the first spacer, the interfacial layer, and the second spacer.

Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. When the first transistor is turned on by a detection signal, the first transistor is turned off.

Abstract: A method for monitoring a transport vehicle is provided. The method includes the operations as follows. A transport vehicle is scanned by a monitor during the transport vehicle is operated on a rail to acquire a vehicle pattern of the transport vehicle. The vehicle pattern of the transport vehicle is analyzed. An abnormal transport vehicle is determined based on the vehicle pattern. The monitor is placed nearby the rail. A method for transport vehicle maintenance is also provided.

Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Abstract: A layout routing method includes determining a routing pattern according to a swapping rule, a via pattern, area constraints and pin locations; optimizing swapping in differential pairs according to the routing pattern; extracting features of each routing net to obtain extracted features; using an unsupervised algorithm to generate different routing groups according to the extracted features; and determining a routing order of the routing groups according to complex features of the routing groups.

Abstract: A luminescence conversion material is provided. The luminescence conversion material includes: a hybrid luminescence conversion particle, a first cladding material covering the hybrid luminescence conversion particle, and a second cladding material formed on the first cladding material and covering the first cladding material. The hybrid luminescence conversion particle includes a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first cladding material includes silicon oxide. The ratio ? (absorbance ratio ?: A939/A1000-1150) of the absorbance at 939 cm?1 (A939) to the absorbance peak at 1000-1150 cm?1 (A1000-1150) in a FTIR spectrum of the first cladding material is less than or equal to 0.8.

Abstract: A luminescence conversion material is provided. The luminescence conversion material includes: a hybrid luminescence conversion particle, a first cladding material covering the hybrid luminescence conversion particle, and a second cladding material formed on the first cladding material and covering the first cladding material. The hybrid luminescence conversion particle includes a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first cladding material includes silicon oxide. The ratio ? (absorbance ratio ?: A939/A1000-1150) of the absorbance at 939 cm?1 (A939) to the absorbance peak at 1000-1150 cm?1 (A1000-1150) in a FTIR spectrum of the first cladding material is less than or equal to 0.8.

Abstract: A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I): wherein the definitions of R1, R2, A1, A2, A3, and Z1 and n are as defined in the specification.

Abstract: Organic metal compounds and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure of Formula (I) or Formula (II): In particular, one of the following two conditions (1) and (2) is met: (1) R1 is deuterium or C1-6 deuterated alkyl group, when R3 and R4 are independently hydrogen, halogen, C1-6 alkyl group, C1-6 fluoroalkyl or C3-12 heteroaryl group; and (2) R1 is hydrogen, deuterium, C1-6 alkyl group, C1-6 deuterated alkyl group, C3-12 heteroaryl group, or C6-12 aryl group, when at least one of R3 and R4 is C6-12 aryl group or C6-12 fluoroaryl group.

Abstract: Organic metal compounds, and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure of Formula (I): The definitions of R1-R18 and n are as defined in specification. The organic light-emitting device includes a pair of electrodes; and an organic light-emitting element, disposed between the electrodes, wherein the organic light-emitting element includes the aforementioned organic metal compound.

Abstract: Organic metal compounds and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure of Formula (I) or Formula (II): In particular, one of the following two conditions (1) and (2) is met: (1) R1 is deuterium or C1-6 deuterated alkyl group, when R3 and R4 are independently hydrogen, halogen, C1-6 alkyl group, C1-6 fluoroalkyl or C3-12 heteroaryl group; and (2) R1 is hydrogen, deuterium, C1-6 alkyl group, C1-6 deuterated alkyl group, C3-12 heteroaryl group, or C6-12 aryl group, when at least one of R3 and R4 is C6-12 aryl group or C6-12 fluoroaryl group.