Patents by Inventor Po-Kang Wan

Po-Kang Wan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications
    Patent number: 6129957
    Abstract: A method of manufacturing a magnetoresistive head comprises forming a magnetoresistive structure with a magnetoresistive element with a first AFM element. Perform a first annealing step at a high temperature with a high magnetic field. Form the remaining MR structure including second AFM elements. Perform a low magnetic field (H.sub.ann) annealing step following the fabrication of the second AFM elements. Then perform a no externally applied field (H.sub.ann =0) annealing step at a high temperature to increase the H.sub.ex of the second AFM element to full strength, whereby the stability of the first AFM element is enhanced or increases its H.sub.ex if there were a decrease during the low magnetic field annealing step.
    Type: Grant
    Filed: October 12, 1999
    Date of Patent: October 10, 2000
    Assignee: Headway Technologies, Inc.
    Inventors: Rongfu Xiao, Chyu-Jiuh Torng, Tai Min, Hui-Chuan Wang, Cherng-Chyi Han, Mao-Min Chen, Po-Kang Wan