Abstract: A method includes forming a first transistor over a substrate, in which the first transistor includes first source/drain epitaxy structures; forming a second transistor over the first transistor, in which the second transistor includes second source/drain epitaxy structures; forming an opening extending through one of the second source/drain epitaxy structures and exposing a top surface of one of the first source/drain epitaxy structures; performing a first deposition process to form a first metal in the opening, in which a first void is formed in the first metal during the first deposition process; performing a first etching back process to the first metal until the first void is absent; and performing a second deposition process to form a second metal in the opening and over the first metal.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate. The semiconductor device includes a P-type device over the semiconductor fin and an N-type device over the semiconductor fin. The P-type device includes a first source/drain (S/D) feature adjacent a first gate structure. The P-type device includes a dipole layer over the first S/D feature, where the dipole layer includes a first metal and a second metal different from the first metal. The P-type device further includes a first silicide layer over the dipole layer, where the first silicide layer includes the first metal. The N-type device includes a second S/D feature adjacent a second gate structure. The N-type device further includes a second silicide layer directly contacting the second S/D feature, where the second silicide layer includes the first metal, and where a composition of the second silicide layer is different from that of the dipole layer.

Abstract: The present disclosure is related to a vapor chamber lid. The vapor chamber lid includes a base plate and a top plate. The base plate includes a plate body, a frame, a plurality of supporting pillars and a chip accommodating portion. The frame surrounds the plate body to define a cooling space. The cooling space is configured to accommodate a working fluid. The supporting pillars are located in the cooling space. The chip accommodating portion is located on the plate body of the base plate and is facing away from the cooling space. The top plate is located on the frame of the base plate to seal the cooling space. An external sidewall of the frame of the base plate is coplanar with an external sidewall of the top plate.

Abstract: A semiconductor device structure and methods of forming the same are described. In some embodiments, the structure includes an N-type source/drain epitaxial feature disposed over a substrate, a P-type source/drain epitaxial feature disposed over the substrate, a first silicide layer disposed directly on the N-type source/drain epitaxial feature, and a second silicide layer disposed directly on the P-type source/drain epitaxial feature. The first and second silicide layers include a first metal, and the second silicide layer is substantially thicker than the first silicide layer. The structure further includes a third silicide layer disposed directly on the first silicide layer and a fourth silicide layer disposed directly on the second silicide layer. The third and fourth silicide layer include a second metal different from the first metal, and the third silicide layer is substantially thicker than the fourth silicide layer.

Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.

Abstract: Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.

Abstract: The present disclosure is related to a vapor chamber lid. The vapor chamber lid includes a base plate and a top plate. The base plate includes a plate body, a frame, a plurality of supporting pillars and a chip accommodating portion. The frame surrounds the plate body to define a cooling space. The cooling space is configured to accommodate a working fluid. The supporting pillars are located in the cooling space. The chip accommodating portion is located on the plate body of the base plate and is facing away from the cooling space. The top plate is located on the frame of the base plate to seal the cooling space. An external sidewall of the frame of the base plate is coplanar with an external sidewall of the top plate.

Abstract: A lubricating system is installed in a common injection molding machine which includes a stationary mold half unit, a movable mold half unit which can be moved towards and away from the stationary mold half unit, a toggle mechanism coupled with the movable mold half unit so as to be driven to move the movable mold half unit, a mold pressing hydraulic cylinder having a piston rod coupled with the toggle mechanism so as to drive the toggle mechanism, and an oil feed system coupled with the mold pressing hydraulic cylinder so as to provide hydraulic pressure for the mold pressing hydraulic cylinder to drive the toggle mechanism.