Patents by Inventor Po-Liang Yeh
Po-Liang Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11444206Abstract: A manufacturing method of a semiconductor structure including the following steps is provided: forming a first metal layer on a substrate; forming an insulating layer on the first metal layer; forming an oxide semiconductor material layer on the insulating layer; performing an annealing treatment to the oxide semiconductor material layer; forming an etch stopping material layer on the oxide semiconductor material layer; forming a photoresist material layer on the etch stopping material layer and defining thereof with a half tone photomask to form a photoresist pattern; using the photoresist pattern as a mask, patterning the etch stopping material layer to form an etch stopping pattern, and patterning the oxide semiconductor material layer to form an oxide semiconductor layer; removing the photoresist pattern; using the etch stopping pattern as the mask, patterning the insulating layer; forming a second metal layer on the etch stopping pattern; and patterning the oxide semiconductor layer.Type: GrantFiled: August 5, 2021Date of Patent: September 13, 2022Assignee: Au Optronics CorporationInventors: Po-Liang Yeh, Chen-Chung Wu, De-Zhang Deng, Chia-Ming Chang
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Patent number: 11367795Abstract: A semiconductor device including a first substrate and a thin film transistor disposed on the first substrate is provided. The thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain. The first insulating layer is disposed between the gate and the semiconductor pattern. The source and the drain are separated from each other and disposed corresponding to the semiconductor pattern. At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer. The first copper oxynitride patterned layer covers the first copper patterned layer. The first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. Moreover, a manufacturing method of the semiconductor device is also provided.Type: GrantFiled: November 3, 2020Date of Patent: June 21, 2022Assignee: Au Optronics CorporationInventors: Ting-Fong Chien, Po-Liang Yeh, Chen-Chung Wu, Chia-Ming Chang, Chun-An Chang
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Publication number: 20210367079Abstract: A manufacturing method of a semiconductor structure including the following steps is provided: forming a first metal layer on a substrate; forming an insulating layer on the first metal layer; forming an oxide semiconductor material layer on the insulating layer; performing an annealing treatment to the oxide semiconductor material layer; forming an etch stopping material layer on the oxide semiconductor material layer; forming a photoresist material layer on the etch stopping material layer and defining thereof with a half tone photomask to form a photoresist pattern; using the photoresist pattern as a mask, patterning the etch stopping material layer to form an etch stopping pattern, and patterning the oxide semiconductor material layer to form an oxide semiconductor layer; removing the photoresist pattern; using the etch stopping pattern as the mask, patterning the insulating layer; forming a second metal layer on the etch stopping pattern; and patterning the oxide semiconductor layer.Type: ApplicationFiled: August 5, 2021Publication date: November 25, 2021Applicant: Au Optronics CorporationInventors: Po-Liang Yeh, Chen-Chung Wu, De-Zhang Deng, Chia-Ming Chang
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Patent number: 11171244Abstract: A semiconductor structure disposed on a substrate including a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopping pattern disposed on the oxide semiconductor layer, and a second metal layer disposed on the etch stopping layer. The first metal layer includes a gate line. The gate insulating layer covers the gate line. Patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern. The etch stopping layer is located between the second metal layer and the oxide semiconductor layer. The second metal layer includes a signal line disposed on the etch stopping layer and is electrically connected to the oxide semiconductor pattern. A manufacturing method of the semiconductor structure is also provided.Type: GrantFiled: July 4, 2019Date of Patent: November 9, 2021Assignee: Au Optronics CorporationInventors: Po-Liang Yeh, Chen-Chung Wu, De-Zhang Deng, Chia-Ming Chang
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Publication number: 20210050454Abstract: A semiconductor device including a first substrate and a thin film transistor disposed on the first substrate is provided. The thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain. The first insulating layer is disposed between the gate and the semiconductor pattern. The source and the drain are separated from each other and disposed corresponding to the semiconductor pattern. At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer. The first copper oxynitride patterned layer covers the first copper patterned layer. The first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. Moreover, a manufacturing method of the semiconductor device is also provided.Type: ApplicationFiled: November 3, 2020Publication date: February 18, 2021Applicant: Au Optronics CorporationInventors: Ting-Fong Chien, Po-Liang Yeh, Chen-Chung Wu, Chia-Ming Chang, Chun-An Chang
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Patent number: 10866286Abstract: A connection detection system and a connection detection method are provided. The connection detection system includes a connector, an expansion dock and a signal transmitter. The connector has a first detecting pin and a second detecting pin. The second detecting pin receives a first signal or a second signal from the first detecting pin when the expansion dock is connected to the connector. The signal transmitter is coupled to the connector. The signal transmitter is configured to receive a detection signal through the second detecting pin and determine whether the connector is connected to the expansion dock according to the sensing signal. The signal transmitter provides the first signal to the first detecting pin when the connector is not connected to the expansion dock. The signal transmitter provides the second signal to the second detecting pin when the connector is connected to the expansion dock.Type: GrantFiled: December 12, 2018Date of Patent: December 15, 2020Assignee: PEGATRON CORPORATIONInventors: Yi-Tso Chang, Po-Liang Yeh
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Publication number: 20200303553Abstract: A semiconductor structure disposed on a substrate including a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopping pattern disposed on the oxide semiconductor layer, and a second metal layer disposed on the etch stopping layer. The first metal layer includes a gate line. The gate insulating layer covers the gate line. Patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern. The etch stopping layer is located between the second metal layer and the oxide semiconductor layer. The second metal layer includes a signal line disposed on the etch stopping layer and is electrically connected to the oxide semiconductor pattern. A manufacturing method of the semiconductor structure is also provided.Type: ApplicationFiled: July 4, 2019Publication date: September 24, 2020Applicant: Au Optronics CorporationInventors: Po-Liang Yeh, Chen-Chung Wu, De-Zhang Deng, Chia-Ming Chang
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Publication number: 20190341494Abstract: A semiconductor device including a first substrate and a thin film transistor disposed on the first substrate is provided. The thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain. The first insulating layer is disposed between the gate and the semiconductor pattern. The source and the drain are separated from each other and disposed corresponding to the semiconductor pattern. At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer. The first copper oxynitride patterned layer covers the first copper patterned layer. The first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. Moreover, a manufacturing method of the semiconductor device is also provided.Type: ApplicationFiled: November 1, 2018Publication date: November 7, 2019Applicant: Au Optronics CorporationInventors: Ting-Fong Chien, Po-Liang Yeh, Chen-Chung Wu, Chia-Ming Chang, Chun-An Chang
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Publication number: 20190277901Abstract: A connection detection system and a connection detection method are provided. The connection detection system includes a connector, an expansion dock and a signal transmitter. The connector has a first detecting pin and a second detecting pin. The second detecting pin receives a first signal or a second signal from the first detecting pin when the expansion dock is connected to the connector. The signal transmitter is coupled to the connector. The signal transmitter is configured to receive a detection signal through the second detecting pin and determine whether the connector is connected to the expansion dock according to the sensing signal. The signal transmitter provides the first signal to the first detecting pin when the connector is not connected to the expansion dock. The signal transmitter provides the second signal to the second detecting pin when the connector is connected to the expansion dock.Type: ApplicationFiled: December 12, 2018Publication date: September 12, 2019Applicant: PEGATRON CORPORATIONInventors: Yi-Tso Chang, Po-Liang Yeh
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Patent number: 9905701Abstract: An active device structure and a method of fabricating an active device are provided. The active device structure includes a gate, an oxide channel layer, a source, a drain and a high power deposited insulation layer. The gate and the oxide channel layer are overlapped in a top and bottom manner. The oxide channel layer includes a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer. The source and the drain both contact the oxide channel layer, wherein a gap separating the source and the drain defines a channel area. The high power deposited insulation layer contacts the top layer of the oxide channel layer. The top layer of the oxide channel layer provides the effect of blocking light, which solves the problem of threshold voltage shift due to the light irradiation on the oxide channel layer.Type: GrantFiled: March 16, 2016Date of Patent: February 27, 2018Assignee: Au Optronics CorporationInventors: Po-Liang Yeh, Chen-Chung Wu, Chun-An Chang, Jiang-Jin You, Chia-Ming Chang
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Publication number: 20160300951Abstract: An active device structure and a method of fabricating an active device are provided. The active device structure includes a gate, an oxide channel layer, a source, a drain and a high power deposited insulation layer. The gate and the oxide channel layer are overlapped in a top and bottom manner. The oxide channel layer includes a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer. The source and the drain both contact the oxide channel layer, wherein a gap separating the source and the drain defines a channel area. The high power deposited insulation layer contacts the top layer of the oxide channel layer. The top layer of the oxide channel layer provides the effect of blocking light, which solves the problem of threshold voltage shift due to the light irradiation on the oxide channel layer.Type: ApplicationFiled: March 16, 2016Publication date: October 13, 2016Inventors: Po-Liang Yeh, Chen-Chung Wu, Chun-An Chang, Jiang-Jin You, Chia-Ming Chang
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Patent number: 8704220Abstract: An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.Type: GrantFiled: April 12, 2012Date of Patent: April 22, 2014Assignee: Au Optronics CorporationInventors: Hao-Lin Chiu, Chi-Jui Lin, Shu-Wei Tsao, Chun-Nan Lin, Po-Liang Yeh, Shine-Kai Tseng
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Patent number: 8698150Abstract: An active device, a driving circuit structure, and a display panel are provided. The active device includes a gate, a gate insulation layer covering the gate, a semiconductor layer disposed above the gate, an etching stop layer disposed on the gate insulation layer and the semiconductor layer, a source, and a drain. The gate forms a meandering pattern on a substrate. The semiconductor layer has an area substantially defining a device region where the active device is. The etching stop layer has a first contact opening and a second contact opening. The first contact opening and the second contact opening separated from each other and both exposing the semiconductor layer. The source and the drain separated from each other are disposed on the etching stop layer and in contact with the semiconductor layer through the first contact opening and the second contact opening, respectively.Type: GrantFiled: October 4, 2012Date of Patent: April 15, 2014Assignee: Au Optronics CorporationInventors: Chao-Yu Yang, Hao-Lin Chiu, Shu-Wei Tsao, Shih-Che Huang, Po-Liang Yeh, Chun-Nan Lin, Shine-Kai Tseng
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Publication number: 20130328069Abstract: An active device, a driving circuit structure, and a display panel are provided. The active device includes a gate, a gate insulation layer covering the gate, a semiconductor layer disposed above the gate, an etching stop layer disposed on the gate insulation layer and the semiconductor layer, a source, and a drain. The gate forms a meandering pattern on a substrate. The semiconductor layer has an area substantially defining a device region where the active device is. The etching stop layer has a first contact opening and a second contact opening. The first contact opening and the second contact opening separated from each other and both exposing the semiconductor layer. The source and the drain separated from each other are disposed on the etching stop layer and in contact with the semiconductor layer through the first contact opening and the second contact opening, respectively.Type: ApplicationFiled: October 4, 2012Publication date: December 12, 2013Applicant: AU OPTRONICS CORPORATIONInventors: Chao-Yu Yang, Hao-Lin Chiu, Shu-Wei Tsao, Shih-Che Huang, Po-Liang Yeh, Chun-Nan Lin, Shine-Kai Tseng
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Publication number: 20130119371Abstract: An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.Type: ApplicationFiled: April 12, 2012Publication date: May 16, 2013Applicant: AU OPTRONICS CORPORATIONInventors: Hao-Lin Chiu, Chi-Jui Lin, Shu-Wei Tsao, Chun-Nan Lin, Po-Liang Yeh, Shine-Kai Tseng