Abstract: A capability allocation method employed by a wireless fidelity (Wi-Fi) device includes: during association between the Wi-Fi device and another Wi-Fi device, setting up a first capability allocation of a first non-AP station (STA); and after the first non-AP STA associates with a first AP, changing the first capability allocation of the first non-AP STA in the absence of re-association. Each of the Wi-Fi device and the another Wi-Fi device includes a plurality of stations. The first AP is affiliated to the another Wi-Fi device. The first non-AP STA is affiliated to the Wi-Fi device.

Abstract: Embodiments of present disclosure provide a MIM capacitor including a straining layer on an electrode, and a high-k dielectric layer formed on the straining layer. The straining layer allows the high-k dielectric layer to be highly crystallized without requiring an extra annealing process. The high crystallization of the high-k dielectric layer results in increased the dielectric value (k-value), thus, improving capacitance density in the MIM capacitor. Some embodiments provide a MIM capacitor device including stacked MIM capacitors with symmetrically arranged high-k dielectric layers and straining layers.

Abstract: A nuclear battery module is adapted for a nuclear battery. The nuclear battery module includes a radioactive unit and at least one energy conversion unit. The radioactive unit includes a soft substrate and at least one radioactive layer disposed on the soft substrate. The at least one radioactive layer includes a ?-ray source. The at least one energy conversion unit includes a flexible carrier layer, an N-type semiconductor layer disposed on the flexible carrier layer, and a P-type semiconductor layer disposed on the N-type semiconductor layer opposite to the flexible carrier layer. The at least one energy conversion unit is disposed on the radioactive unit in a manner such that the flexible carrier layer is proximate to the radioactive unit.

Abstract: A neurovascular age prediction system based on white matter and a method thereof are disclosed. An analysis device generates an individual space periventricular area mask and an individual space deep white matter mask by nonlinear space counterpoint technology and MNI152 brain template, and reversely transforms individual coordinates into a transition matrix, performs white matter hyperintensity (WMH) signal image processing on the T1 weighted image and the T2 fluid attenuated inversion recovery (FLAIR) image to generate a T1 weighted WMH signal image and a T2 FLAIR WMH signal image, then converts the Ti WMH signal image and the T2 FLAIR WMH signal image into logarithms of a periventricular white matter volume and a deep WMH volume based on the individual space periventricular area mask and the individual space deep white matter mask, and substitutes the logarithms into a neurovascular age prediction model to obtain a neurovascular age prediction result.

Abstract: A waste oil recycling device is provided, wherein the waste oil recycling device includes: a basin configured to be mounted to a barrel and including a first internal space and a basin opening in communication with each other, the first internal space being configured to be in communication with an interior of barrel, the basin opening being open toward a first direction; at least one connection tube extending on the basin in the first direction and configured to be in communication with the interior of the barrel; and a receiver connected to the at least one connection tube and including a second internal space and a receiving opening in communication with each other, the second internal space being in communication with the at least one connection tube.

Abstract: Embodiments of present disclosure provide a MIM capacitor device structure including a first conductive layer and a dielectric stack disposed on the first and second portions of the first conductive layer. The dielectric stack includes a first dielectric layer disposed on the first conductive layer, a high-k dielectric layer disposed on the first dielectric layer, and a second dielectric layer disposed on the high-k dielectric layer. The structure further includes a second conductive layer disposed on the dielectric stack, a first conductive feature extending through the first conductive layer and a first portion of the dielectric stack, and a second conductive feature extending through a second portion of the dielectric stack and the second conductive layer.

Abstract: An integrated nucleic acid processing apparatus includes a first operation area, a second operation area and a separation wall. The first operation area includes multiple carrying boards for placing objects and reagents for processing nucleic acids in samples, and multiple operation modules for performing operations of nucleic acid processing. The second operation area includes two extraction regions for respectively performing nucleic acid extractions. The separation wall separates the first operation area from the second operation area and includes two openable door sheets spatially corresponding to the two extraction regions. Nucleic acid extraction plates can be moved from the first operation area to the second operation area by means of the carrying boards as the two openable door sheets are opened, and be isolated in the second operation area for performing nucleic acid extractions as the two openable door sheets are closed.

Abstract: A battery device includes a casing, a cell module, and a catalytic converter. The casing has an interior space. The cell module is arranged in the internal space. The catalytic converter is arranged in the internal space and separates the cell module from an external space relative to the internal space. A combustion suppression method of battery device is also provided.

Abstract: Antibodies that include an antigen binding region that binds to CD137 are provided herein. Also provided herein are bispecific antibodies that include a first antigen binding region that binds to CD137 and a second antigen binding region that binds to an immune checkpoint molecule, an immune stimulatory molecule, or a tumor antigen. Pharmaceutical compositions that include the antibodies and methods of treating cancer are provided.

Abstract: A method includes forming a p-well and an n-well in a substrate. The method further includes forming a stack of interleaving first semiconductor layers and second semiconductor layers over the p-well and the n-well, the first semiconductor layers having a first thickness and the second semiconductor layers having a second thickness different than the first thickness. The method further includes annealing the stack of interleaving semiconductor layers. The method further includes patterning the stack to form fin-shaped structures including a first fin-shaped structure over the n-well and a second fin-shaped structure over the p-well. The method further includes etching to remove the second semiconductor layers from the first and second fin-shaped structures, where the first semiconductor layers have a different thickness within each of the first and second fin-shaped structures after the etching. The method further includes forming a metal gate over the first and second fin-shaped structures.

Abstract: A method includes: forming a redistribution layer (RDL) comprising metal material over a substrate; forming an oxidation layer of the metal material on sidewalls of the RDL; and depositing a passivation layer over the RDL and the oxidation layer, wherein the oxidation layer is formed between the RDL and the passivation layer; wherein the oxidation layer strengthens bonding between the RDL and the passivation layer to resist hydrogen induced voids from forming. The method may allow for performing a hydrogen plasma annealing treatment without hydrogen-induced voiding in top or bottom corners of the RDL. A device includes: an RDL comprising metal material formed over a substrate; a passivation layer formed over the RDL; and an oxidation layer of the metal material formed on sidewalls of the RDL between the RDL and the passivation layer. The device may be formed without voids in top or bottom corners of the RDL.

Abstract: Provided are monospecific and bispecific proteins that bind specifically to PD-L1. Exemplary proteins release the inhibition through PD-L1. Exemplary polyvalent proteins comprise at least one PD-L1 binding site. In certain embodiments, the binding sites may be linked through an immunoglobulin constant region. Anti-PD-L1 antibodies are also provided. A pharmaceutical composition includes the antibody or the antigen-binding portion thereof as above mentioned and at least one pharmaceutically acceptable carrier.

Abstract: An oil filling device is provided, including: a main body, configured to cover an open end portion of an oil pot, including at least one first sliding portion and a channel; a control member, rotatably disposed on the main body; two clamping members, at least one of the two clamping members including a second sliding portion slidably mounted to the at least one first sliding portion; at least one guiding unit, each of the at least one guiding unit including a guiding groove and an assembly portion; at least one positioning member, connected to the assembly portion and slidably disposed within the guiding groove, wherein rotation of the control member operates to control at least one of the two clamping members to move relative to the main body so that the two clamping members relatively approach to or distance away from each other.

Abstract: The present invention provides a magnetic power machine comprising a path portion, a rotor portion and a stator portion, wherein a rolling path is provided around the path portion; the rotor portion is provided around and outside the path portion and capable of rotating, and has an output shaft on one end that outputs power; a plurality of movable rods are provided on the rotor portion; a force-receiving arm and a roller are respectively provided on a top and a bottom of each of the movable rods; the roller moves along the rolling path; the force-receiving arm unfolds or folds as the roller moves up or down on the rolling path; the stator portion is provided around and outside the rotor portion; a plurality of force-exerting arms are provided opposite to the force-receiving arms on an inner edge of the stator portion; a magnetic force-exerting unit of single-sheet N-S arrangement and a magnetic force-receiving unit of triple-sheet N-S arrangement are respectively provided on the force-exerting arm and the for

Abstract: A data storage device includes a memory device and a memory controller. The memory device includes multiple memory blocks which include one or more spare memory blocks not written with data and one or more predetermined memory blocks that are configured as a buffer for receiving data from a host device. The memory controller obtains a total number of remaining erasable count of the memory blocks and determines a setting value of a number of said one or more predetermined memory blocks according to a number of currently remaining spare memory block(s), a number of the predetermined memory block(s) that has/have been written with data among said one or more predetermined memory blocks, a predetermined threshold and the total number of remaining erasable count of the memory blocks, and configures the number of the predetermined memory block(s) as the buffer according to the setting value.

Abstract: A data storage device includes a memory device and a memory controller. The memory device includes multiple memory blocks. The memory blocks includes one or more spare memory blocks that are not written with data and one or more predetermined memory blocks that are configured as a buffer for receiving data from a host device. The memory controller is coupled to the memory device and configured to access the memory device. The memory controller is configured to determine a setting value of a number of said one or more predetermined memory blocks according to a number of currently remaining spare memory block(s), a number of the predetermined memory block(s) that has/have been written with data among said one or more predetermined memory blocks and a predetermined threshold, and configure the number of the predetermined memory block(s) as the buffer according to the setting value.

Abstract: A method includes forming a semiconductor substrate, forming hard mask layers (HMs) over the semiconductor substrate, forming first mandrels over the HMs, forming second mandrels along sidewalls of the first mandrels, forming a protective layer over the first mandrels and the second mandrels, removing a portion of the protective layer to expose portions of the first and the second mandrels, removing the exposed portions of the second mandrels with respect to the exposed portions of the first mandrels, removing remaining portions of the protective layer to expose remaining portions of the first and second mandrels, where the exposed portions of the first mandrels and the remaining portions of the first and second mandrels form a mandrel structure, patterning the HMs using the mandrel structure as an etching mask, and patterning the semiconductor substrate to form a fin structure using the patterned HMs as an etching mask.

Abstract: A method for performing access management of a memory device in a predetermined communications architecture with aid of automatic parameter setting and associated apparatus are provided. The method includes: utilizing the memory controller to set at least one write booster static parameter of a write booster function of the memory device; utilizing the memory controller to perform device initialization corresponding to at least one initialization phase of the memory device; and after completing the device initialization corresponding to the at least one initialization phase, performing at least one adaptive flag-setting operation, for setting at least one write booster flag among a plurality of write booster flags of the write booster function, wherein the at least one write booster flag includes a first write booster flag acting as a write booster switch. The adaptive flag-setting operation includes setting the first write booster flag to enable the write booster function by default.

Abstract: A decoder includes a demultiplexer and a number (P) of ADCs, where P?2. The demultiplexer receives a to-be-decoded data signal that is in a PAM-2M format, and demultiplexes the to-be decoded data signal into a number (P) of demultiplexed data signals, where M?2. The ADCs respectively receive the demultiplexed data signals. One of the ADCs is an (M+1)-bit ADC, and converts the corresponding demultiplexed data signal into a digital first decoded signal that contains an M-bits wide data portion and a one-bit wide error portion. Each of the other one(s) of the ADCs is an M-bit ADC, and converts the corresponding demultiplexed data signal into a digital second decoded signal that contains an M-bits wide data portion.

Abstract: A funnel storage device is provided, wherein the funnel storage device includes: a tubular member including a first end portion and a second end portion; a receiving member connected to the first end portion, in communication with an interior of the tubular member, and tapering in a direction toward the first end portion; and a base connected to the second end portion, not in communication with the interior of the tubular member, and expanding in a direction away from the second end portion.