Abstract: A method includes attaching a package component to a package substrate, the package component includes: an interposer disposed over the package substrate; a first die disposed along the interposer; and a second die disposed along the interposer, the second die being laterally adjacent the first die; attaching a first thermal interface material to the first die, the first thermal interface material being composed of a first material; attaching a second thermal interface material to the second die, the second thermal interface material being composed of a second material different from the first material; and attaching a lid assembly to the package substrate, the lid assembly being further attached to the first thermal interface material and the second thermal interface material.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A clock and data recovery circuit is disclosed. The clock and data recovery circuit includes a phase detection circuit, a first voting circuit, a low-pass filtering circuit and a phase interpolation circuit. The phase detection circuit is configured to receive a first signal and a clock signal and generate a phase signal. The first voting circuit is configured to charge at least one capacitance component according to the phase signal and generate a first voting signal according to a charging result. The low-pass filtering circuit is configured to generate a phase control signal according to the first voting signal. The phase interpolation circuit is configured to generate the clock signal according to the phase control signal.

Abstract: A clock and data recovery circuit is disclosed. The clock and data recovery circuit includes a phase detection circuit, a first voting circuit, a low-pass filtering circuit and a phase interpolation circuit. The phase detection circuit is configured to receive a first signal and a clock signal and generate a phase signal. The first voting circuit is configured to charge at least one capacitance component according to the phase signal and generate a first voting signal according to a charging result. The low-pass filtering circuit is configured to generate a phase control signal according to the first voting signal. The phase interpolation circuit is configured to generate the clock signal according to the phase control signal.

Abstract: A signal receiving circuit, a memory storage device and a signal receiving method are provided. The signal receiving circuit includes an equalizer module, a clock and data recovery (CDR) circuit and a controller. The equalizer module is configured to receive a first signal and compensate the first signal to generate a second signal. The CDR circuit is configured to perform a phase locking on the second signal. The controller is configured to open or close a signal pattern filter of the CDR circuit according to the second signal, wherein the signal pattern filter is configured to filter a signal having a specific pattern in the second signal.