Patents by Inventor Po Min Tu
Po Min Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11142460Abstract: The present disclosure provides a method for repairing defect of graphene, including: firstly introducing a composite fluid containing a reactive compound and a supercritical fluid to a reactor where the graphene powder has been placed, and impregnating the graphene powder with the composite fluid to passivate and repair the defect of graphene, wherein the reactive compound includes carbon, hydrogen, nitrogen, silicon or oxygen element; and separating the composite fluid from the graphene powder, simultaneously using molecular sieves to absorb the graphene from the composite fluid. The present disclosure further provides the graphene powder prepared by the method above. With the method of the present disclosure, it effectively reduces the ratio of the defect of the graphene, increases the content of the graphene, and has less-layer graphene with high thermal conductivity and electrical conductivity.Type: GrantFiled: May 15, 2019Date of Patent: October 12, 2021Assignee: XSENSE TECHNOLOGY CORPORATIONInventors: Zhen-Yu Li, Po-Min Tu, Chia-Jung Chen, Yeu-Wen Huang
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Publication number: 20210074884Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The light emitting diode structure is square. The structural supporting area is positioned at a side of the top portion and protrudes from the surface of the bottom portion beside the top portion along the same direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.Type: ApplicationFiled: November 17, 2020Publication date: March 11, 2021Inventors: TZU-CHIEN HUNG, CHIEN-CHUNG PENG, CHIEN-SHIANG HUANG, CHIA-HUI SHEN, PO-MIN TU
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Publication number: 20190352187Abstract: The present disclosure provides a method for repairing defect of graphene, including: firstly introducing a composite fluid containing a reactive compound and a supercritical fluid to a reactor where the graphene powder has been placed, and impregnating the graphene powder with the composite fluid to passivate and repair the defect of graphene, wherein the reactive compound includes carbon, hydrogen, nitrogen, silicon or oxygen element; and separating the composite fluid from the graphene powder, simultaneously using molecular sieves to absorb the graphene from the composite fluid. The present disclosure further provides the graphene powder prepared by the method above. With the method of the present disclosure, it effectively reduces the ratio of the defect of the graphene, increases the content of the graphene, and has less-layer graphene with high thermal conductivity and electrical conductivity.Type: ApplicationFiled: May 15, 2019Publication date: November 21, 2019Inventors: Zhen-Yu Li, Po-Min Tu, Chia-Jung Chen, Yeu-Wen Huang
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Patent number: 10418512Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.Type: GrantFiled: December 6, 2017Date of Patent: September 17, 2019Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.Inventors: Po-Min Tu, Tzu-Chien Hung, Chia-Hui Shen, Chien-Shiang Huang, Chien-Chung Peng, Ya-Wen Lin, Ching-Hsueh Chiu
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Patent number: 10416225Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.Type: GrantFiled: November 28, 2017Date of Patent: September 17, 2019Assignee: ADVANCED OPTOELECTRONICS TECHNOLOGY INC.Inventors: Po-Min Tu, Tzu-Chien Hung, Chia-Hui Shen, Chien-Shiang Huang, Chien-Chung Peng, Ya-Wen Lin, Ching-Hsueh Chiu
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Publication number: 20190198708Abstract: An epitaxial wafer as a light emitting diode (LED) comprises a sapphire substrate, a buffer layer, an N-type semiconductor layer, a light emitting active layer, and a P type semiconductor layer. The buffer layer, the N-type semiconductor layer, the light emitting active layer, and the P type semiconductor layer are formed on C-plane of the sapphire substrate in that order. The light-emitting active layer comprises at least one quantum well structure, with a quantum well region, a gradient region, a high-content aluminum region, and a blocking region. The blocking region covers and is connected to the high-content aluminum region, the P-type semiconductor layer of aluminum-doped or indium-doped gallium nitride covers the gradient region. Content of aluminum or indium changes linearly from side close to the N-type semiconductor layer to side furthest from the N-type semiconductor layer.Type: ApplicationFiled: March 29, 2018Publication date: June 27, 2019Inventors: CHING-HSUEH CHIU, PO-MIN TU, YA-WEN LIN
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Publication number: 20190198712Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The light emitting diode structure is square. The structural supporting area is positioned at a side of the top portion and protrudes from the surface of the bottom portion beside the top portion along the same direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.Type: ApplicationFiled: March 1, 2019Publication date: June 27, 2019Inventors: TZU-CHIEN HUNG, CHIEN-CHUNG PENG, CHIEN-SHIANG HUANG, CHIA-HUI SHEN, PO-MIN TU
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Publication number: 20190140136Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.Type: ApplicationFiled: December 6, 2017Publication date: May 9, 2019Inventors: PO-MIN TU, TZU-CHIEN HUNG, CHIA-HUI SHEN, CHIEN-SHIANG HUANG, CHIEN-CHUNG PENG, YA-WEN LIN, CHING-HSUEH CHIU
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Publication number: 20190128951Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.Type: ApplicationFiled: November 28, 2017Publication date: May 2, 2019Inventors: PO-MIN TU, TZU-CHIEN HUNG, CHIA-HUI SHEN, CHIEN-SHIANG HUANG, CHIEN-CHUNG PENG, YA-WEN LIN, CHING-HSUEH CHIU
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Patent number: 10263148Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The bottom portion is wider than the top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The structural supporting area protrudes from the surface of the bottom portion beside the top portion along the same single direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is at least arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.Type: GrantFiled: October 17, 2017Date of Patent: April 16, 2019Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INCInventors: Tzu-Chien Hung, Chien-Chung Peng, Chien-Shiang Huang, Chia-Hui Shen, Po-Min Tu
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Publication number: 20190103512Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The bottom portion is wider than the top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The structural supporting area protrudes from the surface of the bottom portion beside the top portion along the same single direction. Atop of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is at least arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.Type: ApplicationFiled: October 17, 2017Publication date: April 4, 2019Inventors: TZU-CHIEN HUNG, CHIEN-CHUNG PENG, CHIEN-SHIANG HUANG, CHIA-HUI SHEN, PO-MIN TU
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Patent number: 10205048Abstract: A method for manufacturing a light emitting diode (LED) chip comprises steps of stacking together a first substrate, a buffer layer, an ultraviolet light (UV) shielding layer, and at least one LED chip in that sequence. An orthogonal projection of each LED chip on the UV shielding layer is located in the scope of the UV shielding layer, and a periphery of the UV shielding layer protrudes from a periphery of the orthogonal projection; mounting a side of each LED chip facing away from the first substrate on the second substrate with an adhesive layer; irradiating UV light from a side of the first substrate facing away from the LED chip, to separate the first substrate from the UV shielding layer; removing the UV light shielding layer, the second substrate, and the adhesive layer from each LED chip.Type: GrantFiled: November 27, 2017Date of Patent: February 12, 2019Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INCInventors: Po-Min Tu, Tzu-Chien Hung, Chia-Hui Shen, Chien-Shiang Huang, Chien-Chung Peng
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Patent number: 10164142Abstract: A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.Type: GrantFiled: June 27, 2017Date of Patent: December 25, 2018Assignees: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC., Innolux CorporationInventors: Po-Min Tu, Chien-Shiang Huang, Chien-Chung Peng, Tzu-Chien Hung, Shih-Cheng Huang, Chang-Ho Chen, Tsau-Hua Hsieh, Jong-Jan Lee, Paul-John Schuele
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Patent number: 10109770Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.Type: GrantFiled: August 22, 2017Date of Patent: October 23, 2018Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INCInventors: Ching-Hsueh Chiu, Chia-Hung Huang, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
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Patent number: 10050176Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.Type: GrantFiled: June 6, 2017Date of Patent: August 14, 2018Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
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Publication number: 20180212105Abstract: A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.Type: ApplicationFiled: June 27, 2017Publication date: July 26, 2018Inventors: PO-MIN TU, CHIEN-SHIANG HUANG, CHIEN-CHUNG PENG, TZU-CHIEN HUNG, SHIH-CHENG HUANG, CHANG-HO CHEN, TSAU-HUA HSIEH, JONG-JAN LEE, PAUL-JOHN SCHUELE
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Patent number: 9978728Abstract: A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.Type: GrantFiled: May 24, 2017Date of Patent: May 22, 2018Assignees: Innolux Corporation, Advanced Optoelectronics Technology Inc.Inventors: Chun-Hsien Lin, Tsau-Hua Hsieh, Po-Min Tu, Tzu-Chien Hung, Chien-Chung Peng, Shih-Cheng Huang
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Publication number: 20170373227Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.Type: ApplicationFiled: August 22, 2017Publication date: December 28, 2017Inventors: CHING-HSUEH CHIU, CHIA-HUNG HUANG, YA-WEN LIN, PO-MIN TU, SHIH-CHENG HUANG
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Publication number: 20170345801Abstract: A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.Type: ApplicationFiled: May 24, 2017Publication date: November 30, 2017Applicants: Innolux Corporation, Advanced Optoelectronic Technology Inc.Inventors: Chun-Hsien Lin, Tsau-Hua Hsieh, Po-Min Tu, Tzu-Chien Hung, Chien-Chung Peng, Shih-Cheng Huang
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Patent number: 9786818Abstract: A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.Type: GrantFiled: August 11, 2015Date of Patent: October 10, 2017Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: Ching-Hsueh Chiu, Chia-Hung Huang, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang