Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system reduces splashback of the tin droplets onto the receiver by generating a net electric charge within the droplets using a charge electrode and decelerating the droplets by applying an electric field with a counter electrode.

Abstract: A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

Abstract: A method comprises cleaning a surface of a reticle by irradiating the surface of the reticle in a first exposure device for a predetermined irradiation time. A layout pattern of the reticle is projected onto a photo resist layer of a wafer in a second exposure device by an EUV radiation. The photo resist layer is developed to generate a photo resist pattern on the wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is adjusted until the determined CDU satisfies a predetermined criterion.

Abstract: A method of cleaning a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a first exposure device. The surface of the reticle is cleaned in the first exposure device by irradiating the surface of the reticle with an extreme ultraviolet (EUV) radiation for a predetermined irradiation time. After the cleaning, the reticle is transferred to a second exposure device for lithography operation.

Abstract: An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween that includes a reticle, and a layer of electrostatic discharge material disposed on the first surface, wherein the electrostatic discharge material reduces electrostatic charges on the reticle.

Abstract: An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

Abstract: A method of cleaning a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a first exposure device. The surface of the reticle is cleaned in the first exposure device by irradiating the surface of the reticle with an extreme ultraviolet (EUV) radiation for a predetermined irradiation time. After the cleaning, the reticle is transferred to a second exposure device for lithography operation.

Abstract: An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

Abstract: An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

Abstract: A method of operating a semiconductor apparatus includes generating, by a droplet generator, a target material droplet; receiving, by a catcher, the target material droplet, wherein the catcher has a first section and a second section, wherein the first section of the catcher is closer to the droplet generator than the second section of the catcher; and heating the second section of the catcher, wherein the first section of the catcher is longer than the second section of the catcher and is free of a heater, and heating the second section of the catcher is performed such that a temperature of the second section of the catcher is higher than a temperature of the first section of the catcher.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system reduces splashback of the tin droplets onto the receiver by generating a net electric charge within the droplets using a charge electrode and decelerating the droplets by applying an electric field with a counter electrode.

Abstract: A method for adhering a reticle onto a top surface of a chuck is provided in accordance with some embodiments of the present disclosure. The method includes sliding a reticle relative to a chuck along a first direction, such that a plurality of fibers over a top surface of the chuck are inclined away from an imaginary line normal to the top surface of the chuck by sliding the reticle relative to the chuck along the first direction; performing a photolithography process using the reticle; and after performing the photolithography process, sliding the reticle relative to the chuck along a second direction opposite to the first direction, such that the fibers are moved back toward the imaginary line by sliding the reticle relative to the chuck along the second direction.

Abstract: A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

Abstract: A method of operating a semiconductor apparatus includes generating, by a droplet generator, a target material droplet; receiving, by a catcher, the target material droplet, wherein the catcher has a first section and a second section, wherein the first section of the catcher is closer to the droplet generator than the second section of the catcher; and heating the second section of the catcher, wherein the first section of the catcher is longer than the second section of the catcher and is free of a heater, and heating the second section of the catcher is performed such that a temperature of the second section of the catcher is higher than a temperature of the first section of the catcher.

Abstract: A method for adhering a reticle onto a top surface of a chuck is provided in accordance with some embodiments of the present disclosure. The method includes sliding a reticle relative to a chuck along a first direction, such that a plurality of fibers over a top surface of the chuck are inclined away from an imaginary line normal to the top surface of the chuck by sliding the reticle relative to the chuck along the first direction; performing a photolithography process using the reticle; and after performing the photolithography process, sliding the reticle relative to the chuck along a second direction opposite to the first direction, such that the fibers are moved back toward the imaginary line by sliding the reticle relative to the chuck along the second direction.

Abstract: A method of operating a semiconductor apparatus includes generating a target material droplet; exciting the target material droplet to generate radiation for exposing a wafer; receiving, by a catcher, the target material droplet after exciting the target material droplet, in which the catcher has a front section, a rear section, and a drain port at the rear section; heating the rear section of the catcher such that the target material droplet in the rear section is in a liquid phase; and maintaining a temperature of the front section of the catcher lower than a temperature of the rear section of the catcher.

Abstract: A method for adhering a reticle onto a top surface of a chuck is provided in accordance with some embodiments of the present disclosure. The method includes contacting a plurality of fibers on the top surface of the chuck with the reticle. The reticle is slid relative to the top surface of the chuck along a first direction to increase a contact area between the fibers and the reticle, such that the reticle is adhered to the fibers.

Abstract: A method for adhering a reticle onto a top surface of a chuck is provided in accordance with some embodiments of the present disclosure. The method includes contacting a plurality of fibers on the top surface of the chuck with the reticle. The reticle is slid relative to the top surface of the chuck along a first direction to increase a contact area between the fibers and the reticle, such that the reticle is adhered to the fibers.

Abstract: A method of operating a semiconductor apparatus includes generating a target material droplet; exciting the target material droplet to generate radiation for exposing a wafer; receiving, by a catcher, the target material droplet after exciting the target material droplet, in which the catcher has a front section, a rear section, and a drain port at the rear section; heating the rear section of the catcher such that the target material droplet in the rear section is in a liquid phase; and maintaining a temperature of the front section of the catcher lower than a temperature of the rear section of the catcher.