Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: A urine testing strip and a urine testing system are provided. The urine testing system includes the urine test strip and a detection device. The urine test strip includes a working electrode, a counter electrode, a reference electrode, a trigger circuit and a protection layer. The protection layer covers the working electrode, the counter electrode and the reference electrode, and portions of the working electrode, the counter electrode and the reference electrode are exposed through an opening of the protection layer. The detection device includes a test strip receiving module and a wireless transmission module. The test strip receiving module is used to receive the test strip and to provide electric power to the test strip for obtaining a detection result. The wireless transmission module is used to transmit the detection result to a mobile computer device.

Abstract: A clamp device is for use with an elastic band and includes first and second clamp components and a coupling unit. The first clamp component has a resiliently deformable clamping arm portion connected to one end of a connecting arm portion, cooperating therewith to define a clearance, and defining a clamping side. The second clamp component has a clamping side disposed to confront that of the first clamp component. The coupling unit couples the two clamp components together in a manner that permits relative movement of the clamp components between a non-clamping state and a clamping state. In the clamping state, the clamping arm portion of the first clamp component deforms to contract the clearance and the clamping sides of the clamp components clamp cooperatively and tightly a portion of the elastic band therebetween.

Abstract: A clamp device is for use with an elastic band and includes first and second clamp components and a coupling unit. The first clamp component has a resiliently deformable clamping arm portion connected to one end of a connecting arm portion, cooperating therewith to define a clearance, and defining a clamping side. The second clamp component has a clamping side disposed to confront that of the first clamp component. The coupling unit couples the two clamp components together in a manner that permits relative movement of the clamp components between a non-clamping state and a clamping state. In the clamping state, the clamping arm portion of the first clamp component deforms to contract the clearance and the clamping sides of the clamp components clamp cooperatively and tightly a portion of the elastic band therebetween.