Patents by Inventor Po-Nan Yeh
Po-Nan Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901180Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: GrantFiled: February 14, 2022Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Publication number: 20230041753Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.Type: ApplicationFiled: October 19, 2022Publication date: February 9, 2023Inventors: Yu-Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang
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Publication number: 20220392803Abstract: A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.Type: ApplicationFiled: August 9, 2022Publication date: December 8, 2022Inventors: U-Ting Chiu, Po-Nan Yeh, Yu-Shih Wang, Chun-Neng Lin, Ming-Hsi Yeh
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Publication number: 20220375868Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.Type: ApplicationFiled: July 27, 2022Publication date: November 24, 2022Inventors: Cheng-Wei CHANG, Chia-Hung CHU, Kao-Feng LIN, Hsu-Kai CHANG, Shuen-Shin LIANG, Sung-Li WANG, Yi-Ying LIU, Po-Nan YEH, Yu Shih WANG, U-Ting CHIU, Chun-Neng LIN, Ming-Hsi YEH
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Publication number: 20220367258Abstract: In an embodiment, a device includes: a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a first conductive feature extending through the first ILD; a first etch stop layer over the first conductive feature and the first ILD, the first etch stop layer being a first dielectric material; a second ILD over the first etch stop layer; a contact having a first portion extending through the second ILD and a second portion extending through the first etch stop layer, the contact being physically and electrically coupled to the first conductive feature; and a first protective layer surrounding the second portion of the contact, the first portion of the contact being free from the first protective layer, the first protective layer being a second dielectric material, the second dielectric material being different from the first dielectric material.Type: ApplicationFiled: July 26, 2022Publication date: November 17, 2022Inventors: Po-Nan Yeh, Yu-Shih Wang, Ming-Hsi Yeh
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Publication number: 20220367254Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.Type: ApplicationFiled: July 22, 2022Publication date: November 17, 2022Inventors: Yu-Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang
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Patent number: 11488857Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.Type: GrantFiled: June 19, 2020Date of Patent: November 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang
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Patent number: 11488859Abstract: In an embodiment, a device includes: a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a first conductive feature extending through the first ILD; a first etch stop layer over the first conductive feature and the first ILD, the first etch stop layer being a first dielectric material; a second ILD over the first etch stop layer; a contact having a first portion extending through the second ILD and a second portion extending through the first etch stop layer, the contact being physically and electrically coupled to the first conductive feature; and a first protective layer surrounding the second portion of the contact, the first portion of the contact being free from the first protective layer, the first protective layer being a second dielectric material, the second dielectric material being different from the first dielectric material.Type: GrantFiled: December 27, 2019Date of Patent: November 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Po-Nan Yeh, Yu Shih Wang, Ming-Hsi Yeh
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Publication number: 20220285209Abstract: A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.Type: ApplicationFiled: March 5, 2021Publication date: September 8, 2022Inventors: U-Ting Chiu, Po-Nan Yeh, Yu-Shih Wang, Chun-Neng Lin, Ming-Hsi Yeh
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Patent number: 11424185Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.Type: GrantFiled: July 31, 2020Date of Patent: August 23, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Wei Chang, Chia-Hung Chu, Kao-Feng Lin, Hsu-Kai Chang, Shuen-Shin Liang, Sung-Li Wang, Yi-Ying Liu, Po-Nan Yeh, Yu Shih Wang, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh
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Publication number: 20220172945Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: ApplicationFiled: February 14, 2022Publication date: June 2, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Patent number: 11276571Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: GrantFiled: June 22, 2020Date of Patent: March 15, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Patent number: 11195752Abstract: A method for forming a semiconductor device includes forming a metal contact on a substrate, forming a first dielectric on the metal contact, forming a first opening in the first dielectric, and performing a wet etch on a bottom surface of the first opening through a first etch stop layer (ESL) over the metal contact. The wet etch forms a first recess in a top surface of the metal contact. An upper width of the first recess is smaller than a lower width of the first recess. A first conductive feature is formed in the first recess and the first opening.Type: GrantFiled: May 29, 2020Date of Patent: December 7, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Shih Wang, Kuo-Bin Huang, Ming-Hsi Yeh, Po-Nan Yeh
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Publication number: 20210375677Abstract: A method for forming a semiconductor device includes forming a metal contact on a substrate, forming a first dielectric on the metal contact, forming a first opening in the first dielectric, and performing a wet etch on a bottom surface of the first opening through a first etch stop layer (ESL) over the metal contact. The wet etch forms a first recess in a top surface of the metal contact. An upper width of the first recess is smaller than a lower width of the first recess. A first conductive feature is formed in the first recess and the first opening.Type: ApplicationFiled: May 29, 2020Publication date: December 2, 2021Inventors: Yu Shih Wang, Kuo-Bin Huang, Ming-Hsi Yeh, Po-Nan Yeh
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Publication number: 20210202399Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.Type: ApplicationFiled: July 31, 2020Publication date: July 1, 2021Inventors: Cheng-Wei CHANG, Chia-Hung CHU, Kao-Feng LIN, Hsu-Kai CHANG, Shuen-Shin LIANG, Sung-Li WANG, Yi-Ying LIU, Po-Nan YEH, Yu Shih WANG, U-Ting CHIU, Chun-Neng LIN, Ming-Hsi YEH
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Publication number: 20210202305Abstract: In an embodiment, a device includes: a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a first conductive feature extending through the first ILD; a first etch stop layer over the first conductive feature and the first ILD, the first etch stop layer being a first dielectric material; a second ILD over the first etch stop layer; a contact having a first portion extending through the second ILD and a second portion extending through the first etch stop layer, the contact being physically and electrically coupled to the first conductive feature; and a first protective layer surrounding the second portion of the contact, the first portion of the contact being free from the first protective layer, the first protective layer being a second dielectric material, the second dielectric material being different from the first dielectric material.Type: ApplicationFiled: December 27, 2019Publication date: July 1, 2021Inventors: Po-Nan Yeh, Yu Shih Wang, Ming-Hsi Yeh
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Publication number: 20210202238Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: ApplicationFiled: June 22, 2020Publication date: July 1, 2021Inventors: Yu Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Publication number: 20210134660Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.Type: ApplicationFiled: June 19, 2020Publication date: May 6, 2021Applicants: Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang