Abstract: A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.

Abstract: A program control circuit for an antifuse-type one time programming memory cell array is provided. When the program action is performed, the program control circuit monitors the program current from the memory cell in real time and increases the program voltage at proper time. When the program control circuit judges that the program current generated by the memory cell is sufficient, the program control circuit confirms that the program action is completed.

Abstract: A program control circuit for an antifuse-type one time programming memory cell array is provided. When the program action is performed, the program control circuit monitors the program current from the memory cell in real time and increases the program voltage at proper time. When the program control circuit judges that the program current generated by the memory cell is sufficient, the program control circuit confirms that the program action is completed.

Abstract: A sensing apparatus and data sensing method are provided. The sensing apparatus includes an initial circuit, a reference current generator and a sensing circuit. The initial circuit discharges a sensing end to a reference ground during a discharge period, and pre-charges the sensing end to a preset voltage level during a pre-charge period according to an output signal. The reference current generator draws a reference current from the sensing end. The sensing circuit senses a voltage level on the sensing end to generate the output signal. Wherein, the sensing end receives a cell current from a memory cell, and the pre-charge period is after the discharge period.

Abstract: A sensing apparatus and data sensing method are provided. The sensing apparatus includes an initial circuit, a reference current generator and a sensing circuit. The initial circuit discharges a sensing end to a reference ground during a discharge period, and pre-charges the sensing end to a preset voltage level during a pre-charge period according to an output signal. The reference current generator draws a reference current from the sensing end. The sensing circuit senses a voltage level on the sensing end to generate the output signal. Wherein, the sensing end receives a cell current from a memory cell, and the pre-charge period is after the discharge period.