Patents by Inventor Po-Rung LIN

Po-Rung LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8785947
    Abstract: A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: July 22, 2014
    Assignee: National Chung-Hsing University
    Inventors: Dong-Sing Wuu, Ray-Hua Horng, Chia-Cheng Wu, Po-Rung Lin
  • Publication number: 20100163839
    Abstract: A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.
    Type: Application
    Filed: December 28, 2009
    Publication date: July 1, 2010
    Inventors: Dong-Sing WUU, Ray-Hua HORNG, Chia-Cheng WU, Po-Rung LIN