Patents by Inventor Po-Ruwe Tzng

Po-Ruwe Tzng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFET device with epitaxial structure
    Patent number: 9166010
    Abstract: A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin structure. A recessing trench is formed by the sidewall spacers and the fin, and an epitaxially-grown semiconductor material is formed in and above the recessing trench, forming an epitaxial structure.
    Type: Grant
    Filed: May 11, 2015
    Date of Patent: October 20, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Andrew Joseph Kelly, Po-Ruwe Tzng, Pei-Shan Chien, Wei-Hsiung Tseng
  • FINFET DEVICE WITH EPITAXIAL STRUCTURE
    Publication number: 20150243745
    Abstract: A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin structure. A recessing trench is formed by the sidewall spacers and the fin, and an epitaxially-grown semiconductor material is formed in and above the recessing trench, forming an epitaxial structure.
    Type: Application
    Filed: May 11, 2015
    Publication date: August 27, 2015
    Inventors: Andrew Joseph Kelly, Po-Ruwe Tzng, Pei-Shan Chien, Wei-Hsiung Tseng
  • FinFET device with epitaxial structure
    Patent number: 9029930
    Abstract: A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin structure. A recessing trench is formed by the sidewall spacers and the fin, and an epitaxially-grown semiconductor material is formed in and above the recessing trench, forming an epitaxial structure.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: May 12, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Andrew Joseph Kelly, Po-Ruwe Tzng, Pei-Shan Chien, Wei-Hsiung Tseng
  • FinFET Device with Epitaxial Structure
    Publication number: 20140203338
    Abstract: A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin structure. A recessing trench is formed by the sidewall spacers and the fin, and an epitaxially-grown semiconductor material is formed in and above the recessing trench, forming an epitaxial structure.
    Type: Application
    Filed: March 21, 2014
    Publication date: July 24, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Andrew Joseph Kelly, Po-Ruwe Tzng, Pei-Shan Chien, Wei-Hsiung Tseng
  • Method of making a FinFET device
    Patent number: 8703556
    Abstract: A FinFET device is fabricated by first receiving a FinFET precursor. The FinFET precursor includes a substrate and fin structures on the substrate. A sidewall spacer is formed along sidewall of fin structures in the precursor. A portion of fin structure is recessed to form a recessing trench with the sidewall spacer as its upper portion. A semiconductor is epitaxially grown in the recessing trench and continually grown above the recessing trench to form an epitaxial structure.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: April 22, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Andrew Joseph Kelly, Po-Ruwe Tzng, Pei-Shan Chien, Wei-Hsiung Tseng
  • FinFET device with epitaxial structure
    Patent number: RE48942
    Abstract: A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin structure. A recessing trench is formed by the sidewall spacers and the fin, and an epitaxially-grown semiconductor material is formed in and above the recessing trench, forming an epitaxial structure.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Andrew Joseph Kelly, Po-Ruwe Tzng, Pei-Shan Chien, Wei-Hsiung Tseng