Patents by Inventor Po-Shuan Yang

Po-Shuan Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacture
    Patent number: 9666441
    Abstract: A semiconductor device and method of manufacturing are presented in which features of reduced size are formed using an irradiated mask material. In an embodiment a mask material that has been irradiated with charged ions is utilized to focus a subsequent irradiation process. In another embodiment the mask material is irradiated in order to reshape the mask material and reduce the size of openings formed within the mask material. Through such processes the limits of photolithography may be circumvented and smaller feature sizes may be achieved.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: May 30, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Heng Kao, Samuel C. Pan, Chi-Wen Liu, Miin-Jang Chen, Po-Shuan Yang
  • Semiconductor Device and Method of Manufacture
    Publication number: 20170018435
    Abstract: A semiconductor device and method of manufacturing are presented in which features of reduced size are formed using an irradiated mask material. In an embodiment a mask material that has been irradiated with charged ions is utilized to focus a subsequent irradiation process. In another embodiment the mask material is irradiated in order to reshape the mask material and reduce the size of openings formed within the mask material. Through such processes the limits of photolithography may be circumvented and smaller feature sizes may be achieved.
    Type: Application
    Filed: September 14, 2015
    Publication date: January 19, 2017
    Inventors: Cheng-Heng Kao, Samuel C. Pan, Chi-Wen Liu, Miin-Jang Chen, Po-Shuan Yang