Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A photographing lens assembly includes, in order from an object side to an image side: a first, a second, a third, a fourth, a fifth and a sixth lens elements. The first lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, wherein the object-side surface has at least one convex critical point in an off-axis region thereof. The third lens element has an image-side surface being convex in a paraxial region thereof. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, and an image-side surface being convex in a paraxial region thereof. The sixth lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface has at least one convex critical point in an off-axis region thereof.

Abstract: A method for calibrating the alignment of a wafer is provided. A plurality of alignment position deviation (APD) simulation results are obtained form a plurality of mark profiles. An alignment analysis is performed on a mark region of the wafer with a light beam. A measured APD of the mark region of the wafer is obtained in response to the light beam. The measured APD is compared with the APD simulation results to obtain alignment calibration data. An exposure process is performed on the wafer with a mask according to the alignment calibration data.

Abstract: A method for calibrating the alignment of a wafer is provided. A plurality of alignment position deviation (APD) simulation results are obtained form a plurality of mark profiles. An alignment analysis is performed on a mark region of the wafer with a light beam. A measured APD of the mark region of the wafer is obtained in response to the light beam. The measured APD is compared with the APD simulation results to obtain alignment calibration data. An exposure process is performed on the wafer with a mask according to the alignment calibration data.

Abstract: A method and a system for controlling a rectifier can obtain a predicted switching interval. The method includes steps of: receiving frequency information and line information of a power generator, the line information including a switching point where a voltage or current crosses zero and a switching interval based on the frequency information; obtaining a predicted switching interval according to the frequency information and the line information, and obtaining a feedback signal according to two terminals of at least one component of the rectifier; and switching a switching signal of the rectifier within the predicted switching interval according to the feedback signal.

Abstract: A method and a system for controlling a rectifier can obtain a predicted switching interval. The method includes steps of: receiving frequency information and line information of a power generator, the line information including a switching point where a voltage or current crosses zero and a switching interval based on the frequency information; obtaining a predicted switching interval according to the frequency information and the line information, and obtaining a feedback signal according to two terminals of at least one component of the rectifier; and switching a switching signal of the rectifier within the predicted switching interval according to the feedback signal.