Patents by Inventor Po-Tsang HAUNG

Po-Tsang HAUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11476248
    Abstract: An integrated circuit structure includes a first transistor, an interconnect structure, a first dielectric layer, polycrystalline plugs, a semiconductor structure and a second transistor. The first transistor is formed on a substrate. The interconnect structure is over the first transistor. The first dielectric layer is over the interconnect structure. The polycrystalline plugs extend from a top surface of the dielectric layer into the dielectric layer. The semiconductor structure is disposed over the first dielectric layer. The second transistor is formed on the semiconductor structure.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: October 18, 2022
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chenming Hu, Po-Tsang Haung
  • Publication number: 20210202475
    Abstract: An integrated circuit structure includes a first transistor, an interconnect structure, a first dielectric layer, polycrystalline plugs, a semiconductor structure and a second transistor. The first transistor is formed on a substrate. The interconnect structure is over the first transistor. The first dielectric layer is over the interconnect structure. The polycrystalline plugs extend from a top surface of the dielectric layer into the dielectric layer. The semiconductor structure is disposed over the first dielectric layer. The second transistor is formed on the semiconductor structure.
    Type: Application
    Filed: December 26, 2019
    Publication date: July 1, 2021
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Chenming HU, Po-Tsang HAUNG