Abstract: The present disclosure provides a scan driving circuit, which includes a pull-up output charging circuit, a pull-down discharge circuit, a pre-charge circuit, an anti-noise start-up circuit and an anti-noise pull-down discharge circuit. The pull-up output charging circuit is electrically connected to an output terminal, and the pull-down discharge circuit is electrically connected to the output terminal. The pre-charge circuit is electrically connected to the pull-up output charging circuit and the pull-down discharge circuit through a driving node. The anti-noise start-up circuit is electrically connected to the pre-charge circuit. The anti-noise pull-down discharge circuit is electrically connected to the anti-noise start-up circuit, and the anti-noise pull-down discharge circuit is electrically connected to the driving node.

Abstract: The present disclosure provides a scan driving circuit, which includes a pull-up output charging circuit, a pull-down discharge circuit, a pre-charge circuit, an anti-noise start-up circuit and an anti-noise pull-down discharge circuit. The pull-up output charging circuit is electrically connected to an output terminal, and the pull-down discharge circuit is electrically connected to the output terminal. The pre-charge circuit is electrically connected to the pull-up output charging circuit and the pull-down discharge circuit through a driving node. The anti-noise start-up circuit is electrically connected to the pre-charge circuit. The anti-noise pull-down discharge circuit is electrically connected to the anti-noise start-up circuit, and the anti-noise pull-down discharge circuit is electrically connected to the driving node.

Abstract: A contact lens includes at least one color changeable region, wherein the color changeable region includes at least one photoluminescence material. When a wavelength of the photoluminescence material having a maximum radiation intensity is WEmMx, an average transmittance in a wavelength range of 400 nm-700 nm of the color changeable region is T4070, a size of a total area of the color changeable region is AC, and a size of a total area of the contact lens is AL, certain conditions relating to WEmMx, T4070 and AC/AL are satisfied.

Abstract: A plasticizer, a plastic composition and a plastic product are provided. The plasticizer composition and the plastic product include the plasticizer, and the plasticizer has a biodegradability. The plasticizer has a structure represented by Formula (I), in which each of the symbols thereof is as defined in the specification, and the plasticizer has a central structure.

Abstract: A battery material is a core-shell structure, and the core-shell structure includes a core and a shell. The shell surrounds the core. A composition of the core is a silicon material. The shell includes a polymer, the polymer is linear, the polymer includes a first structure and a second structure, the first structure includes a siloxane group, and the second structure includes a carboxyl group or an ester group. The first structure is more adjacent to the core than the second structure.

Abstract: A plastic composition includes at least one plastic and at least one plasticizer. The plastic include a polylactic acid. The plasticizer includes an amide ester compound, and the amide ester compound has the biodegradability. The weight percentage of the plastic in the plastic composition is 85% to 99.99%, and the weight percentage of the plasticizer in the plastic composition is 0.01% to 15%.

Abstract: A polymer, which is a composition of a battery, is polymerized by a polymeric precursor, and the polymeric precursor includes at least two or at least three monomers. Each of the monomers is a lactone, a lactone cyclic ester or a carbonate ester. The polymer includes a polyester, and the polyester is a straight chain.

Abstract: A contact lens includes at least one color changeable region, wherein the color changeable region includes at least one photoluminescence material. When a wavelength of the photoluminescence material having a maximum radiation intensity is WEmMx, an average transmittance in a wavelength range of 400 nm-700 nm of the color changeable region is T4070, a size of a total area of the color changeable region is AC, and a size of a total area of the contact lens is AL, certain conditions relating to WEmMx, T4070 and AC/AL are satisfied.

Abstract: A contact lens includes at least one color changeable region, wherein the color changeable region includes at least one photoluminescence material. When a wavelength of the photoluminescence material having a maximum radiation intensity is WEmMx, an average transmittance in a wavelength range of 400 nm-700 nm of the color changeable region is T4070, a size of a total area of the color changeable region is AC, and a size of a total area of the contact lens is AL, certain conditions relating to WEmMx, T4070 and AC/AL are satisfied.

Abstract: A contact lens product includes a contact lens and a buffer solution. The contact lens is stored in the buffer solution. The buffer solution includes at least one antioxidant. The contact lens includes at least one curcuminoid. When a weight percentage concentration of the curcuminoid in the contact lens is Ccu, and a weight percentage concentration of the antioxidant in the buffer solution is Cao, a specific condition relating to Ccu/Cao is satisfied.

Abstract: A fan management system includes a fan and a server. The fan includes a driving circuit, and the driving circuit is configured for driving the fan. The fan operates in an operation mode. The server is connected to the fan and is configured for controlling the operation of the fan. The driving circuit outputs a digital label signal when the fan operates abnormally, and the server obtains a production history, an operation information and a warning message of the fan through the digital label signal. The server adjusts the operation mode of the fan according to the warning message simultaneously.

Abstract: A contact lens includes at least one color changeable region, wherein the color changeable region includes at least one photoluminescence material. When a wavelength of the photoluminescence material having a maximum radiation intensity is WEmMx, an average transmittance in a wavelength range of 400 nm-700 nm of the color changeable region is T4070, a size of a total area of the color changeable region is AC, and a size of a total area of the contact lens is AL, certain conditions relating to WEmMx, T4070 and AC/AL are satisfied.

Abstract: A buckle device comprises a main unit, a disk unit, a press unit, and an elastic unit. The main unit includes a housing. The disk unit includes at least one vertical disk. The press unit includes a press body. The elastic unit includes a first spring body. One end of the first spring body is disposed on the vertical disk. The other end of the first spring body is disposed on the press body. The first spring body is a thrust spring to extend the lifespan of the buckle device.

Abstract: A buckle device comprises a main unit, a disk unit, a press unit, and an elastic unit. The main unit includes a housing. The disk unit includes at least one vertical disk. The press unit includes a press body. The elastic unit includes a first spring body. One end of the first spring body is disposed on the vertical disk. The other end of the first spring body is disposed on the press body. The first spring body is a thrust spring to extend the lifespan of the buckle device.

Abstract: A fan motor braking apparatus includes a fan motor, a conversion circuit and a motor driver circuit. The conversion circuit is respectively and electrically connected to the fan motor and the motor driver circuit. The conversion circuit includes bridge structures. After the fan motor starts operating, the motor driver circuit receives at least one fan status signal and determines whether the fan motor braking apparatus enters a braking status or not according to the at least one fan status signal. When the fan motor braking apparatus enters the braking status, the motor driver circuit outputs a braking control signal to the conversion circuit so that the bridge structures of the conversion circuit generate a brake effect on fan motor, wherein the at least one fan status signal includes an external speed-control signal and a transition voltage signal of the fan motor.

Abstract: A fan motor braking apparatus is provided. The fan motor braking apparatus includes a fan motor, a conversion circuit and a motor driver circuit. The conversion circuit is respectively and electrically connected to the fan motor and the motor driver circuit. The conversion circuit includes bridge structures. After the fan motor starts operating, the motor driver circuit receives at least one fan status signal and determines whether the fan motor braking apparatus enters a braking status or not according to the at least one fan status signal. When the fan motor braking apparatus enters the braking status, the motor driver circuit outputs a braking control signal to the conversion circuit so that the bridge structures of the conversion circuit generate a brake effect on fan motor, wherein the at least one fan status signal includes an external speed-control signal and a transition voltage signal of the fan motor.

Abstract: The present disclosure relates to an arrangement and a method of performance-aware buffer zone placement for a high-density array of unit cells. A first feature density of the array is measured and maximum variation for a parameter within a unit cell is determined. A look-up table of silicon data is consulted to predict a buffer zone width and gradient value that achieves a variation that is less than the maximum variation for the unit cell. The look-up table contains a suite of silicon test cases of various array and buffer zone geometries, wherein variation of the parameter within a respective test structure is measured and cataloged for the various buffer zone geometries, and is also extrapolated from the suite of silicon test cases. A buffer zone is placed at the border of the array with a width that is less than or equal to the buffer zone width.

Abstract: The present disclosure relates to an arrangement and a method of performance-aware buffer zone placement for a high-density array of unit cells. A first feature density of the array is measured and maximum variation for a parameter within a unit cell is determined. A look-up table of silicon data is consulted to predict a buffer zone width and gradient value that achieves a variation that is less than the maximum variation for the unit cell. The look-up table contains a suite of silicon test cases of various array and buffer zone geometries, wherein variation of the parameter within a respective test structure is measured and cataloged for the various buffer zone geometries, and is also extrapolated from the suite of silicon test cases. A buffer zone is placed at the border of the array with a width that is less than or equal to the buffer zone width.

Abstract: The present invention provides a method for enhancing optoelectronic properties of polymers that contain conjugated moieties in their molecular structures (hereby denoted as “conjugated polymers”), to be used in lighting, photovoltaics, other various optoelectronic devices and applications. The method of the present invention includes preparing a conjugated polymer layer or multiple conjugated polymer layers and imprinting the conjugated polymer layer or layers through the application of a mold or multiple molds.

Abstract: The present disclosure relates to an arrangement and a method of performance-aware buffer zone placement for a high-density array of unit cells. A first feature density of the array is measured and maximum variation for a parameter within a unit cell is determined. A look-up table of silicon data is consulted to predict a buffer zone width and gradient value that achieves a variation that is less than the maximum variation for the unit cell. The look-up table contains a suite of silicon test cases of various array and buffer zone geometries, wherein variation of the parameter within a respective test structure is measured and cataloged for the various buffer zone geometries, and is also extrapolated from the suite of silicon test cases. A buffer zone is placed at the border of the array with a width that is less than or equal to the buffer zone width.