Abstract: The invention introduces an apparatus for detecting errors during data encryption. The apparatus includes a search circuitry and a substitution check circuitry. The key generation circuitry is arranged operably to convert a first value of one byte corresponding to a plaintext, an intermediate encryption result, or a round key into a second value of a K-bit according to an 8-to-K lookup table, where K is an integer ranging from 10 to 15 and the second value comprises (K minus 8) bits of a Hamming parity. The substitution check circuitry is arranged operably to employ check formulae corresponding to the 8-to-K lookup table to determine whether an error is occurred during a conversion of the first value of the one byte into the second value of the K-bit, and output an error signal when finding the error, where a total amount of the formulae is K minus 8.

Abstract: An electronic device has a narrow viewing angle state and a wide viewing angle state, and includes a panel and a light source providing a light passing through the panel. In the narrow viewing angle state, the light has a first relative light intensity and a second relative light intensity. The first relative light intensity is the strongest light intensity, the second relative light intensity is 50% of the strongest light intensity, the first relative light intensity corresponds to an angle of 0°, the second relative light intensity corresponds to a half-value angle, and the half-value angle is between ?15° and 15°. In the narrow angle state, a third relative light intensity at each angle between 20° and 60° or each angle between ?20° and ?60° is lower than 20% of the strongest light intensity.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: A semiconductor package is provided. The semiconductor package includes an encapsulating layer, a semiconductor die formed in the encapsulating layer, and an interposer structure covering the encapsulating layer. The interposer structure includes an insulating base having a first surface facing the encapsulating layer, and a second surface opposite the first surface. The interposer structure also includes insulating features formed on the first surface of the insulating base and extending into the encapsulating layer. The insulating features is arranged in a matrix and faces a top surface of the semiconductor die. The interposer structure further includes first conductive features formed on the first surface of the insulating base and extending into the encapsulating layer. The first conductive features surround the matrix of the insulating features.

Abstract: An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.

Abstract: A catalytic converter with a heating member for use in a motorcycle. It includes (a) a catalytic member installed in an exhaust pipe of a motorcycle for converting exhaust toxic gases to nontoxic gases; (b) a liquid petroleum gas heating member including an air mixer, a liquid petroleum gas tank which is connected to the air mixer, a solenoid valve which is connected between the liquid petroleum gas tank and the air mixer for controlling a flow rate of a liquid petroleum gas into the air mixer, and a nozzle which is located at one end of the catalytic member and is connected to the air mixer; (c) a control unit connected to the solenoid valve and an ignition member located in the nozzle, for controlling the solenoid valve and for igniting a mixture of the air and the liquid petroleum gas at the nozzle to heat the catalytic member when a sensor senses an initial cold starting temperature in the catalytic member below a light-off temperature; and (d) a battery wiring to the control unit.