Patents by Inventor Po-Yang Wang

Po-Yang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240153824
    Abstract: A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate under the recess is covered at least by a bottommost sacrificial layer of the stack. The method also includes forming inner spacers on terminal ends of the sacrificial layers that are above the bottommost sacrificial layer, depositing an undoped layer in the recess, and forming a doped epitaxial feature over the undoped layer. The undoped layer covers terminal ends of a bottommost channel layer of the stack. The doped epitaxial feature covers terminal ends of the channel layers that are above the bottommost channel layer.
    Type: Application
    Filed: March 22, 2023
    Publication date: May 9, 2024
    Inventors: Ting-Yeh CHEN, Wei-Yang LEE, Po-Cheng WANG, De-Fang CHEN, Chao-Cheng CHEN
  • Patent number: 11923433
    Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Liang Pan, Yungtzu Chen, Chung-Chieh Lee, Yung-Chang Hsu, Chia-Yang Hung, Po-Chuan Wang, Guan-Xuan Chen, Huan-Just Lin
  • Patent number: 9884320
    Abstract: A system for detecting one or more biomarkers is provided, the system comprising: an inlet region for receiving a sample; a channel connected with the inlet region, wherein the channel allows the sample to move along thereof; multiple functional zones arranged along the channel in a designated distribution; and a driving mechanism to force the sample to move along the channel.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: February 6, 2018
    Assignee: Winnoz Technology, Inc.
    Inventors: Le-Chang Hsiung, Po-Yang Wang, Po-Chun Chen, Chuan Whatt Eric Ou
  • Publication number: 20160318018
    Abstract: A system for detecting one or more biomarkers is provided, the system comprising: an inlet region for receiving a sample; a channel connected with the inlet region, wherein the channel allows the sample to move along thereof; multiple functional zones arranged along the channel in a designated distribution; and a driving mechanism to force the sample to move along the channel.
    Type: Application
    Filed: April 29, 2016
    Publication date: November 3, 2016
    Inventors: Le-Chang Hsiung, Po-Yang Wang, Po-Chun Chen, Chuan Whatt Eric Ou
  • Patent number: 9464233
    Abstract: Provided is a siloxane-containing trianhydride having a structure shown in formula 1: wherein R1 to R7, D1 to D3, and each G are as defined in the specification.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: October 11, 2016
    Assignee: Daxin Materials Corporation
    Inventors: Po-Yang Wang, Yi-Chun Lin, Min-Ruei Tsai
  • Publication number: 20150252266
    Abstract: Provided is a siloxane-containing trianhydride having a structure shown in formula 1: wherein R1 to R7, D1 to D3, and each G are as defined in the specification.
    Type: Application
    Filed: March 6, 2015
    Publication date: September 10, 2015
    Inventors: Po-Yang Wang, Yi-Chun Lin, Min-Ruei Tsai
  • Patent number: D805650
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: December 19, 2017
    Assignee: Winnoz Technology, Inc.
    Inventors: Le-Chang Hsiung, Jui-Shuan Wu, Po-Chun Chen, Yu-Lin Chen, Po-Yang Wang, Li-Tseng Ou, Fang-Yu Lin