Abstract: The present invention discloses a bias circuit for a sense amplifier having a device under sensing, the device under sensing having an un-programmed state and a programmed state, the bias circuit comprises at least one first branch having at least one first device formed substantially the same as the device under sensing and remaining in the un-programmed state, and at least one second device formed also substantially the same as the device under sensing and being in the programmed state, wherein the at least one first device and the at least one second device are serially connected. A typical application of the present invention is an electrical fuse memory.

Abstract: The present invention discloses a bias circuit for a sense amplifier having a device under sensing, the device under sensing having an un-programmed state and a programmed state, the bias circuit comprises at least one first branch having at least one first device formed substantially the same as the device under sensing and remaining in the un-programmed state, and at least one second device formed also substantially the same as the device under sensing and being in the programmed state, wherein the at least one first device and the at least one second device are serially connected. A typical application of the present invention is an electrical fuse memory.

Abstract: A fuse structure with aggravated electromigration effect is disclosed, which comprises an anode area overlaying a first plurality of contacts that are coupled to a positively high voltage during a programming of the fuse structure, a cathode area overlaying a second plurality of contacts that are coupled to a complementary low voltage during a programming of the fuse structure, and a fuse link area having a first and second end, wherein the first end contacts the anode area at a predetermined distance to the nearest of the first plurality of contacts, and the second end contacts the cathode area at the predetermined distance to the nearest of the second plurality of contacts, wherein the cathode area is smaller than the anode area for the aggravating electromigration effect.