Abstract: A method includes forming a redistribution structure, which formation process includes forming a plurality of dielectric layers over a carrier, forming a plurality of redistribution lines extending into the plurality of dielectric layers, and forming a reinforcing patch over the carrier. The method further includes bonding a package component to the redistribution structure, with the package component having a peripheral region overlapping a portion of the reinforcing patch. And de-bonding the redistribution structure and the first package component from the carrier.

Abstract: A semiconductor device includes a substrate, a package structure, a first heat spreader, and a second heat spreader. The package structure is disposed on the substrate. The first heat spreader is disposed on the substrate. The first heat spreader surrounds the package structure. The second heat spreader is disposed on the package structure. The second heat spreader is connected to the first heat spreader. A material of the first heat spreader is different from a material of the second heat spreader.

Abstract: A semiconductor device includes a circuit substrate, at least one semiconductor die, a first frame, and a second frame. The at least one semiconductor die is connected to the circuit substrate. The first frame is disposed on the circuit substrate and encircles the at least one semiconductor die. The second frame is stacked on the first frame. The first frame includes a base portion and an overhang portion. The base portion has a first width. The overhang portion is disposed on the base portion and has a second width greater than the first width. The overhang portion laterally protrudes towards the at least one semiconductor die with respect to the base portion. The first width and the second width are measured in a protruding direction of the overhang portion.

Abstract: A semiconductor package includes an interposer, a semiconductor die, an underfill layer and an encapsulant. The semiconductor die is disposed over and electrically connected with the interposer, wherein the semiconductor die has a front surface, a back surface, a first side surface and a second side surface, the back surface is opposite to the front surface, the first side surface and the second side surface are connected with the front surface and the back surface, and the semiconductor die comprises a chamfered corner connected with the back surface, the first side surface and the second side surface, the chamfered corner comprises at least one side surface. The underfill layer is disposed between the front surface of the semiconductor die and the interposer. The encapsulant laterally encapsulates the semiconductor die and the underfill layer, wherein the encapsulant is in contact with the chamfered corner of the semiconductor die.

Abstract: A package structure includes a circuit substrate, a semiconductor device and a ring structure. The circuit substrate has a first region and a second region connected thereto. The circuit substrate includes at least one routing layer including a dielectric portion and a conductive portion disposed thereon. A first ratio of a total volume of the conductive portion of the routing layer within the first region to a total volume of the dielectric and conductive portions of the routing layer within the first region is less than a second ratio of a total volume of the conductive portion of the routing layer within the second region to a total volume of the dielectric and conductive portions of the routing layer within the second region. The semiconductor device is disposed over the circuit substrate within the first region, and is electrically coupled to the circuit substrate. The ring structure is disposed over the circuit substrate within the second region.

Abstract: A metallization structure electrically connected to a conductive bump is provided. The metallization structure includes an oblong-shaped or elliptical-shaped redistribution pad, a conductive via disposed on the oblong-shaped or elliptical-shaped redistribution pad, and an under bump metallurgy covering the conductive via, wherein the conductive bump is disposed on the UBM. Furthermore, a package structure including the above-mentioned metallization structures is provided.

Abstract: A method includes forming a redistribution structure over a carrier, the redistribution structure having conductive features on a surface of the redistribution structure distal the carrier; forming a conductive pillar over the surface of the redistribution structure; attaching a die to the surface of the redistribution structure adjacent to the conductive pillar, where die connectors of the die are electrically coupled to the conductive features of the redistribution structure; and attaching a pre-made substrate to the conductive pillar through a conductive joint, where the conductive joint is on the conductive pillar and comprises a different material from the conductive pillar, where the conductive joint and the conductive pillar electrically couple the redistribution structure to the pre-made substrate.

Abstract: A semiconductor package includes a semiconductor die, a redistribution circuit structure, a supporting structure and a protective layer. The redistribution circuit structure is located on and electrically coupled to the semiconductor die. The supporting structure is located on an outer surface of the redistribution circuit structure, wherein the supporting structure is overlapped with at least a part of the semiconductor die or has a sidewall substantially aligned with a sidewall of the semiconductor die in a vertical projection on the redistribution circuit structure along a stacking direction of the redistribution circuit structure and the supporting structure. The protective layer is located on the supporting structure, wherein the supporting structure is sandwiched between the protective layer and the redistribution circuit structure.

Abstract: A package structure includes a circuit substrate, a semiconductor package, a thermal interface material, a lid structure and a heat dissipation structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The thermal interface material is disposed on the semiconductor package. The lid structure is disposed on the circuit substrate and surrounding the semiconductor package, wherein the lid structure comprises a supporting part that is partially covering and in physical contact with the thermal interface material. The heat dissipation structure is disposed on the lid structure and in physical contact with the supporting part of the lid structure.

Abstract: A semiconductor package provided herein includes a wiring substrate, a semiconductor component, conductor terminals, a bottom stiffener and a top stiffener. The wiring substrate has a first surface and a second surface opposite to the first surface. The semiconductor component is disposed on the first surface of the wiring substrate. The conductor terminals are disposed on the second surface of the wiring substrate and electrically connected to the semiconductor component through the wiring substrate. The bottom stiffener is disposed on the second surface of the wiring substrate and positioned between the conductor terminals. The top stiffener is disposed on the first surface of the wiring substrate. The top stiffener is laterally spaced further away from the semiconductor component than the bottom stiffener.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package at least has a semiconductor die and a redistribution layer disposed on an active surface of the semiconductor die and electrically connected with the semiconductor die. The redistribution layer has a wiring-free zone arranged at a location below a corner of the semiconductor die. An underfill is disposed between the semiconductor die and the redistribution layer. The wiring-free zone is located below the underfill and is in contact with the underfill. The wiring-free zone extends horizontally from the semiconductor die to the underfill.

Abstract: Provided is a package structure including a substrate, a stiffener ring, an eccentric die, a lid layer, and a buffer layer. The stiffener ring is disposed on the substrate. The stiffener ring has an inner perimeter to enclose an accommodation area. The eccentric die is disposed within the accommodation area on the substrate. The eccentric die is offset from a center of the accommodation area to close to a first side of the stiffener ring. The lid layer is disposed on the stiffener ring and overlays the eccentric die. The buffer layer is embedded in the lid layer between the first side of the stiffener ring and the eccentric die. The buffer layer has a thickness less than a thickness of the lid layer.

Abstract: A package structure including an organic interposer substrate, a semiconductor die, conductive bumps, an underfill, and an insulating encapsulation is provided. The organic interposer substrate includes stacked organic dielectric layers and conductive wirings embedded in the stacked organic dielectric layers. The semiconductor die is disposed over and electrically connected to the conductive wirings of the organic interposer substrate, and the semiconductor die includes chamfered edges. The conductive bumps are disposed between the semiconductor die and the organic interposer substrate, and the semiconductor die is electrically connected to the organic interposer substrate through the conductive bumps. The underfill is disposed between the semiconductor die and the organic interposer substrate, wherein the underfill encapsulates the conductive bumps and is in contact with the chamfered edges of the at least one semiconductor die.

Abstract: Semiconductor device includes circuit substrate, first semiconductor die, thermal interface material, package lid. First semiconductor die is disposed on and electrically connected to circuit substrate. Thermal interface material is disposed on first semiconductor die at opposite side of first semiconductor die with respect to circuit substrate. Package lid extends over first semiconductor die and is bonded to the circuit substrate. Package lid includes roof, footing, and island. Roof extends along first direction and second direction perpendicular to first direction. Footing is disposed at peripheral edge of roof and protrudes from roof towards circuit substrate along third direction perpendicular to first direction and second direction. Island protrudes from roof towards circuit substrate and contacts thermal interface material on first semiconductor die. Island is disconnected from footing along second direction.

Abstract: A method for forming a chip package structure is provided. The method includes disposing a chip package over a wiring substrate. The method includes forming a first heat conductive structure and a second heat conductive structure over the chip package. The first heat conductive structure and the second heat conductive structure are separated by a first gap. The method includes bonding a heat dissipation lid to the chip package through the first heat conductive structure and the second heat conductive structure. The first heat conductive structure and the second heat conductive structure extend toward each other until the first heat conductive structure contacts the second heat conductive structure during bonding the heat dissipation lid to the chip package.

Abstract: A semiconductor device package includes a die, a molding layer, a heat spreader lid, and a warpage control adhesive layer. The molding layer surrounds the die. The molding layer has a first edge and a second edge at least partially defining a corner of the molding layer. The heat spreader lid covers the molding layer and the die. The warpage control adhesive layer is between the heat spreader lid and the molding layer. The warpage control adhesive layer is at the corner of the molding layer and has a bar shape in a top view, and the warpage control adhesive layer extends from the first edge toward the second edge of the molding layer.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate and a semiconductor die over the substrate. The chip package also includes a lid covering a top surface of the semiconductor die. The lid has a first support structure and a second support structure, and the first support structure and the second support structure are positioned at respective corner portions of the substrate. An opening penetrates through the lid to expose a space containing the semiconductor die, and the lid has a side edge extending from an edge of the first support structure to an edge of the second support structure.

Abstract: Semiconductor devices and methods of manufacture which utilize lids in order to constrain thermal expansion during annealing are presented. In some embodiments lids are placed and attached on encapsulant and, in some embodiments, over first semiconductor dies. As such, when heat is applied, and the encapsulant attempts to expand, the lid will work to constrain the expansion, reducing the amount of stress that would otherwise accumulate within the encapsulant.

Abstract: A package structure includes a circuit substrate, a semiconductor package, a first ring structure and a second ring structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The first ring structure is attached to the circuit substrate and surrounding the semiconductor package, wherein the first ring structure includes a central opening and a plurality of corner openings extending out from corners of the central opening, the semiconductor package is located in the central opening, and the plurality of corner openings is surrounding corners of the semiconductor package.

Abstract: A semiconductor package includes a redistribution structure, a first die, a second die and a buffer layer. The second die is disposed between the first die and the redistribution structure, and the second die is electrically connected to the first die and bonded to the redistribution structure. The buffer layer is disposed on a first sidewall of the second die, wherein a second sidewall of the buffer layer is substantially flush with a third sidewall of the first die.