Abstract: Provided are a package structure and a method of forming the same. The package structure includes a first tier, a second tier, and a third tier. The first tier includes an interposer. The second tier is disposed on the first tier and includes a bottom die. The third tier is disposed on the second tier and includes a plurality of first dies and at least one second die. The at least one second die is disposed between the plurality of first dies. The plurality of first dies are electrically connected to the bottom die by a plurality of first connectors to form a signal path, the plurality of first dies are electrically connected to the interposer by a plurality of second connectors to form a power path, and the plurality of first connectors are closer to the at least one second die than the plurality of second connectors.

Abstract: Devices and method for forming a chip package structure including at least one semiconductor die attached to a redistribution structure, a molding compound die frame laterally surrounding the at least one semiconductor die, and a first underfill material portion located between the redistribution structure and the at least one semiconductor die and contacting sidewalls of the at least one semiconductor die and sidewalls of the molding compound die frame. The first underfill material portion may include at least one cut region, in which the first underfill material portion may include a vertically-extending portion having a uniform lateral width and a horizontally-extending portion having a uniform vertical thickness and adjoined to a bottom end of the vertically-extending portion within each of the at least one cut region.

Abstract: A redistribution structure includes a first dielectric layer, a pad pattern, and a second dielectric layer. The pad pattern is disposed on the first dielectric layer and includes a pad portion and a peripheral portion. The pad portion is embedded in the first dielectric layer, wherein a lower surface of the pad portion is substantially coplanar with a lower surface of the first dielectric layer. The peripheral portion surrounds the pad portion. The second dielectric layer is disposed on the pad pattern and includes a plurality of extending portions extending through the peripheral portion.

Abstract: A package structure and a formation method of a package structure are provided. The method includes forming a recess in a circuit substrate, and the recess has a first sidewall and a second sidewall. The second sidewall is between the first sidewall and a bottommost surface of the circuit substrate, and the second sidewall is steeper than the first sidewall. The method also includes forming a die package, and the die package has a semiconductor die. The method further includes bonding the die package to the circuit substrate through bonding structures such that a portion of the semiconductor die enters the recess of the circuit substrate. In addition, the method includes forming an underfill material to surround the bonding structures and to fill the recess.

Abstract: A method for forming a chip package structure is provided. The method includes disposing a chip package over a wiring substrate. The method includes forming a first heat conductive structure and a second heat conductive structure over the chip package. The first heat conductive structure and the second heat conductive structure are separated by a first gap. The method includes bonding a heat dissipation lid to the chip package through the first heat conductive structure and the second heat conductive structure. The first heat conductive structure and the second heat conductive structure extend toward each other until the first heat conductive structure contacts the second heat conductive structure during bonding the heat dissipation lid to the chip package.

Abstract: A method includes forming a package component comprising forming a dielectric layer, patterning the dielectric layer to form an opening, and forming a redistribution line including a via in the opening, a conductive pad, and a bent trace. The via is vertically offset from the conductive pad. The conductive pad and the bent trace are over the dielectric layer. The bent trace connects the conductive pad to the via, and the bent trace includes a plurality of sections with lengthwise directions un-parallel to each other. A conductive bump is formed on the conductive pad.

Abstract: Semiconductor device includes a circuit substrate, a first semiconductor die and a package lid. The first semiconductor die is disposed on and electrically connected to the circuit substrate. The package lid extends over the first semiconductor die and is bonded to the circuit substrate. the package lid comprises a roof extending, a footing and an island. The roof extends along a first direction and a second direction perpendicular to the first direction. The footing is disposed at a peripheral edge of the roof and protrudes from the roof towards the circuit substrate along a third direction perpendicular to the first direction and the second direction. The island protrudes from the roof towards the circuit substrate, wherein the island is disconnected from the footing along the second direction, and the island is physically connected to the footing along the first direction.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a substrate, an electronic component, a ring structure, and an adhesive layer. The electronic component is located over a surface of the substrate. The ring structure is located over the surface of the substrate and surrounding the electronic component. The ring structure has a bottom surface facing the surface of the substrate and a top surface opposite the bottom surface. The ring structure includes recesses recessed from and located on the top surface, wherein the recesses are arranged corresponding to the corners of the substrate. The adhesive layer is interposed between the bottom surface of the ring structure and the surface of the substrate.

Abstract: A semiconductor device package includes a die, a molding layer, a heat spreader lid, and a warpage control adhesive layer. The molding layer surrounds the die. The molding layer has a first edge and a second edge at least partially defining a corner of the molding layer. The heat spreader lid covers the molding layer and the die. The warpage control adhesive layer is between the heat spreader lid and the molding layer. The warpage control adhesive layer is at the corner of the molding layer and has a bar shape in a top view, and the warpage control adhesive layer extends from the first edge toward the second edge of the molding layer.

Abstract: A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, semiconductor dies over the package substrate, and an underfill element over the package substrate and surrounding the semiconductor dies. A portion of the underfill element is located between the semiconductor dies. The semiconductor die package also includes lid structures respectively attached to the top surfaces of the semiconductor dies. In plan view, each lid structure is located within the periphery of the top surface of the corresponding semiconductor die. Each lid structure is disconnected from other lid structures, and a gap is formed between adjacent lid structures and located over the portion of the underfill element.

Abstract: A method for forming a chip package structure is provided. The method includes forming a first redistribution structure over a first carrier substrate. The method includes bonding a chip structure to the first surface through a first conductive bump. The method includes forming a first molding layer over the first redistribution structure. The method includes removing the first carrier substrate. The method includes forming a second conductive bump over the second surface. The method includes forming a second redistribution structure over a second carrier substrate. The method includes bonding the first redistribution structure to the third surface. The method includes forming a second molding layer over the second redistribution structure. The method includes removing the second carrier substrate. The method includes removing a portion of the second redistribution structure from the fourth surface. The method includes forming a third conductive bump over the fourth surface.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package at least has a semiconductor die and a redistribution layer disposed on an active surface of the semiconductor die and electrically connected with the semiconductor die. The redistribution layer has a wiring-free zone arranged at a location below a corner of the semiconductor die. An underfill is disposed between the semiconductor die and the redistribution layer. The wiring-free zone is located below the underfill and is in contact with the underfill. The wiring-free zone extends horizontally from the semiconductor die to the underfill.

Abstract: A package structure includes a circuit substrate, a semiconductor package, a thermal interface material, a lid structure and a heat dissipation structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The thermal interface material is disposed on the semiconductor package. The lid structure is disposed on the circuit substrate and surrounding the semiconductor package, wherein the lid structure comprises a supporting part that is partially covering and in physical contact with the thermal interface material. The heat dissipation structure is disposed on the lid structure and in physical contact with the supporting part of the lid structure.

Abstract: An embodiment is package structure including a first integrated circuit die, a redistribution structure bonded to the first integrated circuit die, the redistribution structure including a first metallization pattern in a first dielectric layer, the first metallization pattern including a plurality of first conductive features, each of the first conductive features including a first conductive via in the first dielectric layer and first conductive line over the first dielectric layer and electrically coupled to the respective first conductive via, each of the first conductive lines comprising a curve in a plan view, a second dielectric layer over the first dielectric layer and the first metallization pattern, and a second metallization pattern in the second dielectric layer, the second metallization pattern including a plurality of second conductive via in the second dielectric layer, each of the second conductive vias being over and electrically coupled to a respective first conductive line.

Abstract: Semiconductor devices and methods of manufacture which utilize lids in order to constrain thermal expansion during annealing are presented. In some embodiments lids are placed and attached on encapsulant and, in some embodiments, over first semiconductor dies. As such, when heat is applied, and the encapsulant attempts to expand, the lid will work to constrain the expansion, reducing the amount of stress that would otherwise accumulate within the encapsulant.

Abstract: A chip package structure is provided. The chip package structure includes a first semiconductor die bonded over an interposer substrate and a warpage release layer structure. The chip package structure also includes a first organic material layer covering an upper surface of the first semiconductor die; and a first metal layer covering an upper surface of the first organic material layer. The first metal layer has a planar shape that is the same as a planar shape of the first semiconductor die, as viewed in a top-view perspective.

Abstract: A method for forming a semiconductor die package is provided, including disposing a first semiconductor die and a second semiconductor die over an interposer substrate, forming an underfill element over the interposer substrate to surround the first and second semiconductor dies, wherein a portion of the underfill element is between the semiconductor dies, stacking the interposer substrate over a package substrate, and installing a ring structure on the package substrate through an adhesive layer to surround the semiconductor dies. The ring structure has recessed parts recessed from its bottom surface. The recessed parts include first recessed parts arranged in at least one corner area of the ring structure and two second recessed parts arranged in two opposite side areas of the ring structure. The portion of the underfill element between the first and the second semiconductor dies is disposed between the two second recessed parts.

Abstract: A semiconductor package includes a redistribution structure, a first die, a second die and a buffer layer. The second die is disposed between the first die and the redistribution structure, and the second die is electrically connected to the first die and bonded to the redistribution structure. The buffer layer is disposed on a first sidewall of the second die, wherein a second sidewall of the buffer layer is substantially flush with a third sidewall of the first die.

Abstract: A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

Abstract: A method for forming a chip package structure is provided. The method includes forming a dielectric layer over a redistribution structure. The redistribution structure includes a dielectric structure and a plurality of wiring layers in or over the dielectric structure. The method includes forming a first conductive bump structure and a shield bump structure over the dielectric layer. The first conductive bump structure is electrically connected to the wiring layers, and the shield bump structure is electrically insulated from the wiring layers. The method includes bonding a first chip structure to the redistribution structure through the first conductive bump structure. The first chip structure is electrically insulated from the shield bump structure, and the first chip structure extends across a first sidewall of the shield bump structure.