Abstract: The present invention discloses a novel compound useful as the material for a red organic EL device. The novel compound is produced by connecting a benzene ring at the positions 2 and 3 of withdrawing group 2, 5-dimethyl-4-(2,2-dicyano)pyrane, and connecting a conjugated donating group at position 5. Using this compound, the EL emission is shifted to the red spectral region, and a higher purity in color for red EL elements is obtained. The synthesis of the compound is easy and the product yield is improved compared to the prior art. Moreover, the red organic EL devices fabricated using the compound have properties that conform with existing NTSC standards.

Abstract: A tertiary amine imparted quaterphenyl compound represented by the following formula: where R1 and R2, which can be different or the same, are hydrogen, C1-C5 alkyl, or C6-C12 aryl, and R3 is hydrogen, C1-C5 alkyl, a vinyl group, or an aryl vinyl group. The tertiary amine-imparted quaterphenyl compound exhibits good blue light luminescence and hole-transportability, and can be used in forming a hole-transporting layer, a blue light emitting layer, or a combined hole-transporting and light emitting layer of a light emitting organic electroluminescent device. Examples of the quaterphenyl compounds include N-quaterphenyl-4-yl-N,N-diphenylamine, N-(4′-(1,1-diphenylvinyl)quaterphenyl-4-yl)-N-phenyl-N-(m-tolyl)amine, or N-quaterphenyl-4-yl-N-phenyl-N-(m-tolyl)amine.

Abstract: The invention relates to a system and method for the recovery of germanium from the Modified Chemical Vapor Deposition (MCVD) processing wastes by chemical conversion and recovery of germanium from the solid cake product. In the present method, the direct reaction of gaseous hydrogen chloride with the recovered materials effects the rapid and complete chlorination of the germanates, yielding germanium tetrachloride. The germanium tetrachloride product is completely volatilized and removed from the mixture during the exothermic process.

Abstract: The present invention is predicated on applicants' discovery that inhomogeneity in films deposited on heated heterogeneous substrates can be substantially reduced by patterning the large area metal structures. Specifically, metal structures having areas in excess of about 2 mm.sup.2 are patterned so that the metal is within 1 mm of a metal edge. Thus, for example, a normally solid chromium bonding pad on a glass substrate is conveniently made as a patterned, open grid of 1 mm chromium lines. With such patterning, a subsequently deposited layer of silicon nitride has enhanced homogeneity over a large area, including enhanced uniformity of etching rate.

Abstract: A unitary display and sensing device integrates liquid crystal display module elements of a liquid crystal display module for detecting input on a flat panel display screen with the capability for digitizing the detected inputs. In accordance with an illustrative embodiment of the present invention, display elements of a liquid crystal display module are modified to sense input on the display screen. An electrical signal is applied to modified display elements of the liquid crystal display module so that contact with a surface portion of the display screen produces an output signal indicative of its location. The integrated display and sensing device is active matrix addressed for finger input, but may also incorporate display systems for active pen input.

Abstract: Hull cell has been widely used in the plating industry for many years to evaluate the plating chemistry as a function of current densities. However, because of irreproducible mass transfer, Hull cells can only be used qualitatively for process control. A new design of an improved cell with extremely reproducible mass transfer performance utilizes a rotatable cathode, and permits quantitative analysis of the performance of the cell. The improved cell can also be used to study the mass transfer effect on deposit properties and throwing power, which can not be provided by the traditional Hull cell.

Abstract: It has been found that deposition temperature for materials such as cadmium mercury telluride is significantly lowered by precracking selected precursor materials. For example, if organometallic compounds such as diethylmercury and diethyltellurium are decomposed before introduction in the deposition vapor, epitaxial layer formation is possible at 250.degree. C.