Abstract: An optical path correction subassembly, an optical detection assembly, and an optical detection system are provided. The optical path correction subassembly can be optionally configured to be applied to a light detector. The optical path correction subassembly includes a holder structure and an optical path correction structure carried by the holder structure, and the optical path correction structure has a light beam guiding surface arranged as a reverse inclination inclined relative to a vertical line. The light beam guiding surface of the optical path correction structure can be configured to effectively or accurately guide a predetermined light beam to a light receiving surface of the light detector so as to facilitate collection of the predetermined light beam. The light beam guiding surface of the optical path correction structure can be arranged at an acute angle relative to the light receiving surface of the light detector.

Abstract: A method includes providing a substrate, forming a patterned hard mask layer over the substrate, etching the patterned hard mask layer to form a hole that penetrates the patterned hard mask layer, forming a barrier portion in the hole, removing the patterned hard mask layer, and forming a gate structure over the substrate. Formation of the gate structure includes forming a dielectric body portion on the substrate. The barrier portion that is thicker than the dielectric body portion adjoins one end of the dielectric body portion. The dielectric body portion and the barrier portion are collectively referred to as a gate dielectric layer. Formation of the gate structure further includes forming a gate electrode on the gate dielectric layer and forming gate spacers on opposite sidewalls of the gate electrode. During formation of the gate spacers, a portion of the barrier portion is removed to form a recessed corner.

Abstract: A semiconductor memory device includes a substrate having a memory area and a logic circuit area thereon, a first interlayer dielectric layer on the substrate, and a second interlayer dielectric layer on the substrate. An embedded memory cell structure is disposed within the memory area between the first interlayer dielectric layer and the second interlayer dielectric layer. The second interlayer dielectric layer includes a first portion covering the embedded memory cell structure within the memory area and a second portion covering the logic circuit area. A top surface of the first portion is coplanar with a top surface of the second portion.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A method for making a sensing circuit structure is disclosed to provide a transparent substrate, and then to form multiple plating base layers in the transparent substrate in a spaced manner, and then to form a metal conductor layer on each plating base layer using a plating technique. Thus, the thickness of the metal conductor layers can be thinner than that formed by silver paste. The invention relates also to a sensing circuit structure made by this method.

Abstract: A lighting device includes a tube, an insulating body, a first circuit substrate and a plurality of first light emitting diodes. At least one portion of the tube is light-permeable. The insulating body is disposed in the tube, and has a first surface and a second surface which is opposite to the first surface. The first circuit substrate is disposed on the first surface. The first light emitting diodes are disposed on and electrically connected with the first circuit substrate.

Abstract: A photosensitive resin composition for color filters comprises (A) an alkali-soluble resin; (B) a photopolymerizable monomer; (C) a photoinitiator; (D) an organic solvent; and (E) a pigment; wherein said alkali-soluble resin (A) is formed by polymerizing at least one monomer (a-1), which dipole moment is below 1.5D and having at least one aromatic functional group and at least one copolymerizable monomer (a-2) other than said monomer (a-1), wherein the content of oligomer having a molecular weight below 1,000 of said alkali-soluble resin (A) is less than 0.6 wt %, based on the photosensitive resin composition except solvent(D), which remains less residue on an unexposed portion(s) of the substrate and the black matrix at the time of development, and provides color pixels having excellent heat resistance and chemical resistance, further provides LCD having lower electric resistance of the ITO electrode.

Abstract: A photosensitive resin composition for color filters comprises (A) an alkali-soluble resin; (B) a photopolymerizable monomer; (C) a photoinitiator; (D) an organic solvent; and (E) a pigment; wherein said alkali-soluble resin (A) is formed by polymerizing at least one monomer (a-1), which dipole moment is below 1.5D and having at least one aromatic functional group and at least one copolymerizable monomer (a-2) other than said monomer (a-1), wherein the content of oligomer having a molecular weight below 1,000 of said alkali-soluble resin (A) is less than 0.6 wt %, based on the photosensitive resin composition except solvent(D), which remains less residue on an unexposed portion(s) of the substrate and the black matrix at the time of development, and provides color pixels having excellent heat resistance and chemical resistance, further provides LCD having lower electric resistance of the ITO electrode.