Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: The present disclosure provides a scan driving circuit, which includes a pull-up output charging circuit, a pull-down discharge circuit, a pre-charge circuit, an anti-noise start-up circuit and an anti-noise pull-down discharge circuit. The pull-up output charging circuit is electrically connected to an output terminal, and the pull-down discharge circuit is electrically connected to the output terminal. The pre-charge circuit is electrically connected to the pull-up output charging circuit and the pull-down discharge circuit through a driving node. The anti-noise start-up circuit is electrically connected to the pre-charge circuit. The anti-noise pull-down discharge circuit is electrically connected to the anti-noise start-up circuit, and the anti-noise pull-down discharge circuit is electrically connected to the driving node.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: The present disclosure provides a scan driving circuit, which includes a pull-up output charging circuit, a pull-down discharge circuit, a pre-charge circuit, an anti-noise start-up circuit and an anti-noise pull-down discharge circuit. The pull-up output charging circuit is electrically connected to an output terminal, and the pull-down discharge circuit is electrically connected to the output terminal. The pre-charge circuit is electrically connected to the pull-up output charging circuit and the pull-down discharge circuit through a driving node. The anti-noise start-up circuit is electrically connected to the pre-charge circuit. The anti-noise pull-down discharge circuit is electrically connected to the anti-noise start-up circuit, and the anti-noise pull-down discharge circuit is electrically connected to the driving node.

Abstract: A backlit-module-embedded illuminated keyswitch structure includes a baseplate, a mask film disposed below the baseplate and having a first coating configured to substantially reflect a light, a light guide sheet disposed at one side of the mask film and having a light source hole, a reflective layer disposed at one side of the light guide sheet opposite to the mask film and having an opening communicating with the light source hole, a top glue configured to connect the mask film and the light guide sheet around the light source hole, and a bottom glue configured to connect the light guide sheet and the reflective layer around the light source hole. The first coating covers the light source hole. In a stacked direction of the mask film, the light guide sheet, and the reflective layer, at least one of the top glue and the bottom glue overlaps the first coating.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: Disclosed herein are albumin compositions having defined fatty acid profiles and methods of using the same. The albumin compositions described herein are suitable for use in cell culture methods, protein stabilization methods, amongst others. The albumin compositions described herein may improve the viability of and/or promote the growth of cells (e.g., mammalian cells) when the cells are cultured in a medium containing the albumin compositions. The albumin compositions described herein may improve the stability of a biologic when the biologic is in the presence of the albumin compositions. Further provided herein are methods of formulating albumin compositions having defined fatty acid profiles as described herein.

Abstract: Methods and compositions of altering a eukaryotic cell are described including providing to the eukaryotic cell a guide DNA sequence complementary to a target nucleic acid sequence, providing to the eukaryotic cell an Ago enzyme or a nuclease null Ago protein that interacts with the guide DNA sequence for DNA-guided gene editing and regulation of the target nucleic acid sequence in a site specific manner.

Abstract: A method of making a polypeptide including one or more D-amino acids is provided. The method includes combining a ribosome with protein translation factors including (1) a template encoding the polypeptide, wherein the template encoding the polypeptide includes one or more codons which have been recoded to accept a tRNA attached to a D-amino acid, (2) a plurality of L-amino acids and a plurality of corresponding tRNAs, (3) a plurality of D-amino acids and their corresponding aminoacyl tRNA synthetase or a plurality of tRNAs ligated with a D-amino acid, and (4) elongation factor P in a concentration of 2 to 20 micromolar, wherein translation of the template encoding the polypeptide occurs to produce the polypeptide including one or more D-amino acids.

Abstract: Disclosed herein are albumin compositions having defined fatty acid profiles and methods of using the same. The albumin compositions described herein are suitable for use in cell culture methods, protein stabilization methods, amongst others. The albumin compositions described herein may improve the viability of and/or promote the growth of cells (e.g., mammalian cells) when the cells are cultured in a medium containing the albumin compositions. The albumin compositions described herein may improve the stability of a biologic when the biologic is in the presence of the albumin compositions. Further provided herein are methods of formulating albumin compositions having defined fatty acid profiles as described herein.

Abstract: Methods and compositions of altering a eukaryotic cell are described including providing to the eukaryotic cell a guide DNA sequence complementary to a target nucleic acid sequence, providing to the eukaryotic cell an Ago enzyme or a nuclease null Ago protein that interacts with the guide DNA sequence for DNA-guided gene editing and regulation of the target nucleic acid sequence in a site specific manner.

Abstract: A method of making a polypeptide including one or more D-amino acids is provided that includes the use of elongation factor P with translational machinery.

Abstract: In some embodiments, a probe card includes a PCB, a substrate, a pair of probes, a capacitive device and a first part. The PCB includes a pair of conductive paths through a first surface and a second surface of the PCB. The substrate includes a pair of conductive paths through a first surface and a second surface of the substrate. The conductive paths of the substrate and the corresponding conductive paths of the PCB are coupled between the first surface of the substrate and the second surface of the PCB. The probes and the corresponding conductive paths of the substrate are coupled beyond the second surface of the substrate. The capacitive device is coupled between a first conductive path and a second conductive path through the PCB, the substrate and the probes. The first part is configured beyond the second surface of the PCB, and holds the capacitive device.

Abstract: Among other things, one or more techniques and/or systems are provided for shielding a signal pin. A signal pin, such as a signal pin within a probe card used to test electronic devices, such as integrated circuits, is shielded from interference signals, which are emitted from other signal pins within the probe card. Shielding the signal pin mitigates cross-talk issues and/or impendence control issues associated with signals that are carried by the signal pin. In one example, one or more shield pins are arranged with respect to the signal pin according to a shield configuration. For example, the shield configuration comprises a plane of signal pins, a substantially regular layout of signal pins, or a polygonal layout of signal pins, etc. In this way, one or more shield pins inhibit unintended interactions or effects that otherwise occur among two or more signal pins.

Abstract: In some embodiments, a probe card includes a PCB, a substrate, a pair of probes, a capacitive device and a first part. The PCB includes a pair of conductive paths through a first surface and a second surface of the PCB. The substrate includes a pair of conductive paths through a first surface and a second surface of the substrate. The conductive paths of the substrate and the corresponding conductive paths of the PCB are coupled between the first surface of the substrate and the second surface of the PCB. The probes and the corresponding conductive paths of the substrate are coupled beyond the second surface of the substrate. The capacitive device is coupled between a first conductive path and a second conductive path through the PCB, the substrate and the probes. The first part is configured beyond the second surface of the PCB, and holds the capacitive device.