Abstract: Techniques and systems disclosed herein may relate to a server processing work requests of a work requester. For example, the work requester may generate a plurality of work requests comprising functions of an application to be executed by a dependency-aware (DA) server, determine processing dependencies associated with the work requests, communicate, to the DA server, the processing dependencies, and enqueue the work requests on a dependent queue and a conditioned dependent queue based on processing dependencies associated with the DA server. The DA server may then select one of the work requests from the dependent queue or the conditioned dependent queue for processing and processing the selected work request.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a gate dielectric layer on the barrier layer; forming a work function metal layer on the gate dielectric layer; patterning the work function metal layer and the gate dielectric layer; forming a gate electrode on the work function metal layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: Disclosed are a headphone and an operating method thereof. The headphone includes a headband frame, a speaker module, a detector and a controller. The speaker module is disposed on the headband frame. The detector is disposed in the headband frame and detect stress changes on the headband frame to output a frequency response voltage value. The controller is electrically connected to the speaker module and the detector, and receives the frequency response voltage value. The controller determines whether the frequency response voltage value is the same as a target frequency response voltage value to read a target frequency response parameter corresponding to the target frequency response voltage value. The controller drives the speaker module according to the target frequency response parameter.

Abstract: A thermoelectric cooler (TEC) is positioned to move heat away from a hot spot on a semiconductor chip and toward a dielectric substrate. This approach to thermal management is particularly effective when used in conjunction with a buried rail and back side power delivery. The TEC may be in a layer that contains solder connections be between two device layers an IC package. Alternatively, the TEC may be in a metal interconnect structure over the semiconductor substrate such as in a passivation stack at the top of the metal interconnect structure. TECs at either of these locations may be formed by wafer-level processing.

Abstract: A Reliability, Availability and Serviceability (RAS) offload Post-Package Repair (PPR) request system includes a memory system coupled to a Baseboard Management Controller (BMC) device and a Basic Input/Output System (BIOS) subsystem. The BMC device identifies an error in the memory system, retrieves error information associated with the error, uses the error information to generate a Post-Package Repair (PPR) request, and stores the PPR request in a BMC database provided in the BMC device. During an initialization process that occurs subsequent to storing the PPR request in the BMC database, the BMC device retrieves the PPR request and stores it in a shared buffer subsystem. During the initialization process, the BIOS retrieves the PPR request from the shared buffer subsystem, stores the PPR request in a BIOS database provided in the BIOS subsystem, and performs PPR operations on the memory system based on the PPR request stored in the BIOS database.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: A BIOS code storage subsystem modification system includes a computing device having BIOS code storage device modification subsystem coupled to a BIOS storage system that includes a BIOS code storage device and a BIOS data storage device. The BIOS code storage device modification subsystem receives a BIOS code storage device modification interrupt and, in response, provides BIOS code storage device modification information in the BIOS data storage device. Subsequent to providing the BIOS code storage device modification information in the BIOS data storage device, the BIOS code storage device modification subsystem causes the computing device to perform a first reboot. During a first initialization of the computing device in response to the first reboot, a BIOS in the computing device identifies the BIOS code storage device modification information in the BIOS data storage device, and uses the BIOS code storage device modification information to modify the BIOS code storage device.

Abstract: A data storage device that performs instruction scheduling at the device side. The data storage device has a non-volatile memory, and a controller configured to operate the non-volatile memory in response to requests from the host side. The controller has an instruction cache operative to cache instructions issued from the host side. Based on information carried by the instructions, the controller schedules and executes the instructions to operate the non-volatile memory.

Abstract: Vias, along with methods for fabricating vias, are disclosed that exhibit reduced capacitance and resistance. An exemplary interconnect structure includes a first source/drain contact and a second source/drain contact disposed in a dielectric layer. The first source/drain contact physically contacts a first source/drain feature and the second source/drain contact physically contacts a second source/drain feature. A first via having a first via layer configuration, a second via having a second via layer configuration, and a third via having a third via layer configuration are disposed in the dielectric layer. The first via and the second via extend into and physically contact the first source/drain contact and the second source/drain contact, respectively. A first thickness of the first via and a second thickness of the second via are the same. The third via physically contacts a gate structure, which is disposed between the first source/drain contact and the second source/drain contact.

Abstract: A BIOS module provisioning sequence verification system includes a BIOS subsystem coupled to a TPM and a BIOS storage system including a plurality of firmware volumes. The BIOS subsystem provides a plurality of BIOS modules in a BIOS module provisioning sequence using the plurality of firmware volumes and, for each of the plurality of BIOS modules when that BIOS module is provided during the BIOS module provisioning sequence: retrieves a BIOS module identifier associated with that BIOS module, and updates BIOS module provisioning sequence information using that BIOS module identifier. Following the provisioning of the BIOS modules in the BIOS module provisioning sequence, the BIOS subsystem provides the BIOS module provisioning sequence information to the TPM, with the BIOS module provisioning sequence information configured to be compared to BIOS module provisioning sequence verification information to verify the BIOS module provisioning sequence.

Abstract: A method for dynamically allocating radio frequency (RF) exposure across multiple RF groups including a first RF group and a second RF group includes: estimating RF exposure of the first RF group according to at least one message of the first RF group, in order to generate estimated RF exposure; calculating RF exposure of the second RF group according to at least one message of the second RF group, the estimated RF exposure, and one or more equations, in order to generate calculated RF exposure, wherein the one or more equations are associated with a predetermined regulation; and determining a TX power limit corresponding to the first RF group and a TX power limit corresponding to the second RF group according to the estimated RF exposure and the calculated RF exposure, respectively.

Abstract: One aspect of the present disclosure pertains to a semiconductor device. The semiconductor device includes a semiconductor substrate and a transistor formed over the semiconductor substrate. The transistor includes a first source/drain (S/D) feature, a second S/D feature, a channel region interposed between the first and second S/D features, and a gate stack engaging the channel region. The semiconductor device includes a first S/D contact landing on a top surface of the first S/D feature, a second S/D contact landing on a top surface of the second S/D feature, and a dielectric plug penetrating through the semiconductor substrate and landing on a bottom surface of the first S/D feature. The dielectric plug spans a width equal to or smaller than a width of the first S/D feature.

Abstract: A method for performing mapping between one or more radio modules and one or more radiofrequency (RF) groups includes: separating the one or more radio modules into the one or more RF groups according to one or more messages, wherein the one or more messages comprise a previous TX power ratio, a TX power ratio margin, one or more weighting information, one or more TX performance indices, one or more receiving (RX) performance indices, one or more configurations, or one or more usage scenarios; accumulating RF exposure of the one or more radio modules to at least one RF group among the one or more RF groups; and determining at least one transmitting (TX) power limit corresponding to the at least one RF group according to accumulated RF exposure of the at least one RF group.

Abstract: A method for forming a high electron mobility transistor includes the steps of providing a substrate, forming a channel layer, a barrier layer, and a first passivation layer sequentially on the substrate, forming a plurality of trenches through at least a portion of the first passivation layer, forming a second passivation layer on the first passivation layer and covering along sidewalls and bottom surfaces of the trenches, and forming a conductive plate structure on the second passivation layer and filling the trenches.

Abstract: An image adjustment method, applied to an image sensing system comprising an image sensor, comprising: (a) sensing a target image by the image sensor; (b) dividing the target image to a plurality of image regions; (c) acquiring location information of at least one first target feature in the image regions; (d) computing brightness information of each of the image regions; (e) generating adjustment curves according to the brightness information and according to required brightness values of each of the image regions; and (f) adjusting brightness values of the image regions according to the adjustment curves. The step (d) adjusts the brightness information according to the location information or the step (e) adjusts the adjustment curves according to the location information.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers connected to the source/drain feature, a gate structure between adjacent channel layers and wrapping the channel layers, and an inner spacer between the source/drain feature and the gate structure and between adjacent channel layers. The source/drain feature has a first interface with a first channel layer of the channel layer. The first interface has a convex profile protruding towards the first channel layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a power rail; a bottom semiconductor layer formed over the dielectric layer; a backside spacer formed along a sidewall of the bottom semiconductor layer; a conductive feature contacting a sidewall of the dielectric layer and a sidewall of the backside spacer; channel semiconductor layers over the bottom semiconductor layer, wherein the channel semiconductor layers are stacked up and separated from each other; a metal gate structure wrapping each of the channel semiconductor layers; and an epitaxial source/drain (S/D) feature contacting a sidewall of each of the channel semiconductor layers, wherein the epitaxial S/D feature contacts the conductive feature, and the conductive feature contacts the power rail.

Abstract: The present disclosure relates to a semiconductor device and its manufacturing method, and the semiconductor device includes a substrate, a channel layer, a gate electrode, a first electrode, a second electrode, and a metal plate. The channel layer is disposed on the substrate, and the gate electrode is disposed on the channel layer. The first electrode and the second electrode are disposed on the channel layer, at two opposite sides of the gate electrode respectively. The metal plate is disposed over the channel layer, between the first electrode and the gate electrode. The metal plate includes a first extending portion and a second extending portion, wherein the second extending portion extends towards the substrate without contacting the channel layer, and the first extending portion extends toward and directly contacts the first electrode or the second electrode.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: A method of fabricating a semiconductor device includes the following steps. A substrate is provided. A semiconductor channel layer is formed on the substrate. A semiconductor barrier layer is formed on the semiconductor channel layer. An etching process is performed to expose a portion of the semiconductor channel layer. A dielectric layer is formed to cover the semiconductor barrier layer and the exposed semiconductor channel layer. A first electrode is formed after forming the dielectric layer, where the first electrode includes a body portion and a vertical extension portion, the body portion is electrically connected to the semiconductor barrier layer, and a bottom surface of the vertical extension portion is lower than a top surface of the semiconductor channel layer.